• Communications of the Korean Mathematical Society
• /
• v.34 no.1
• /
• pp.83-93
• /
• 2019

Let R be a noncommutative prime ring of characteristic different from 2, U the Utumi quotient ring of R, C the extended centroid of R and f($x_1,{\ldots},x_n$) a noncentral multilinear polynomial over C in n noncommuting variables. Denote by f(R) the set of all the evaluations of f($x_1,{\ldots},x_n$) on R. If d is a nonzero derivation of R and G a nonzero generalized derivation of R such that $$d(G(u)u){\in}Z(R)$$ for all $u{\in}f(R)$, then $f(x_1,{\ldots},x_n)^2$ is central-valued on R and there exists $b{\in}U$ such that G(x) = bx for all $x{\in}R$ with $d(b){\in}C$. As an application of this result, we investigate the commutator $[F(u)u,G(v)v]{\in}Z(R)$ for all $u,v{\in}f(R)$, where F and G are two nonzero generalized derivations of R.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.10
• /
• pp.796-801
• /
• 2001

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the solid-state reaction method, and especially PZT(90/10) and PZT(10/90) powders were derived by the sol-gel method. All specimens showed a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increased in sintering temperature, the values for the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 14.4$\mu$m and 9.8$\mu$m, respectively. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247. 2.06%, respectively. The coercive field and the remanent polarization of x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 8.5kV/cm, 13$\mu$C/$\textrm{cm}^2$ and 17.2kV/cm, 28 $\mu$C/$\textrm{cm}^2$, respectively. The pyroelectric coefficient of the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 5.64$\times$10$^{-8}$ C/$\textrm{cm}^2$K and 2.76$\times$10$^{-8}$ C/$\textrm{cm}^2$K, respectively.

• Korean Journal of Materials Research
• /
• v.5 no.7
• /
• pp.802-807
• /
• 1995

The electrochromic properties of vacuum deposited V$_2$O$_{5}$ thin films as a function of crystallinity and film thickness have been systematically investigated. The as-deposited films have slightly yellow appearance. V$_2$O$_{5}$ films deposited at higher substrate temperature(>14$0^{\circ}C$) are found to be crystalline while those deposited at low substrate temperature are amorphous. The optical modulation on lithium ion injection indicates that V$_2$O$_{5}$ films exhibit anodic coloration in the 300~500 nm wavelength range and cathodic coloration in the 500~1100nm wavelength range independent of crystallinity and film thickness. The optical band gap energy of crystalline and amorphous Li$_{x}$ VV$_2$O$_{5}$ films shifts to higher energies by 0.17 eV and 0.75 eV, respectively, with increasing lithium ion injection up to x=0.6. The coloration efficiency of amorphous Li$_{x}$ V$_2$O$_{5}$ exhibits very little dependence on film thickness and lithium ion injection amounts in the near-infrared while it increases significantly with increasing film thickness and decreasing lithium ion injection amounts in the blue and near-UV due to the shift in absorption edge below around 500nm. However, the coloration efficiency of crystalline Li$_{x}$ V$_2$O$_{5}$is relatively independent of film thickness and lithium ion injection in the 300~1100 nm wavelength range.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.2
• /
• pp.197-206
• /
• 1999

The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.353-355
• /
• 1988

The properites of Zn-diffusion in III-V ternary alloy semiconductor $In_{1-x}Ga_{x}p$, which was grown by the temperature gradient solution (TGS) method, have been investigated. The composition, x, dependence of the Zn-diffusion coefficient at $850^{\circ}C$ and the activation energy for Zn-diffusion into $In_{1-x}Ga_{x}p$ were found to be $D850^{\circ}C$(x)= $3.935{\times}10^{-8}exp(-6.84{\cdot}x)$, and $E_{A}(x)=1,28+2,38{\cdot}x$, respectively. From this study, we confirm that the Zn-diffusion in $In_{1-x}Ga_{x}p$ was explainable with the diffusion mechanisms of the interstitial-substitutional, which was widely accepted mechanisms in the III-V binary semiconductors.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.2
• /
• pp.220-228
• /
• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Journal of Korean Society for Atmospheric Environment
• /
• v.26 no.1
• /
• pp.1-9
• /
• 2010

In this study, the selective catalytic reduction of $NO_x$ with ammonia was carried out in a filter bag support reactor. The experiments were performed by powder type $MnO_x$ and $V_2O_5$/$TiO_2$ catalyst at low temperature between 130 and $250^{\circ}C$. Also, the effect of $SO_2$ and $H_2O$ on the NO conversion was investigated under our test conditions. The powder type catalysts were analyzed by X-ray photoelectron spectrum (XPS), X-ray diffraction(XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was observed that NO removal efficiency of the powder type $V_2O_5$/$TiO_2$ catalyst was 85% at low temperature($200^{\circ}C$) under presence of oxygen and that of $MnO_x$ was 50% at the same condition. The powder type $V_2O_5$/$TiO_2$ catalyst, in conclusion, was found to be available for SCR reaction in a filter bag support system.

• Journal of the Korean Ceramic Society
• /
• v.30 no.11
• /
• pp.962-966
• /
• 1993

Effect of Fe content on the electrical properties of Zn2Y (Ba2Zn2Fe12O22) was studied by investigating X-ray diffraction patterns, microstructure and resistivity of samples. When x(Ba2Zn2Fe12＋xO$\delta$) is between ＋1 and -1, Zn2Y single phase was obtained and electrical resistivity was inversely proportional to Fe content. The possible defect model of Zn2Y was proposed based on the observation. When x<-1 or x>1, second phase(ZnFe2O4 for x<-1, ZnFe2O4 and Ba3Zn3Fe24O41 for x>1) were observed and the electrical resistivity was inversely proportional to the sample density. The activation energy of electrical conductivity of the stoichiometric Zn2Y was 0.49eV below 20$0^{\circ}C$ and 0.07eV above 50$0^{\circ}C$.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.303-306
• /
• 2011

[ $V_2O_5$ ]doped Karrooite pigments were synthesized by the solid state method to get stabilized brown pigment in oxidation and reduction atmosphere. Optimum substitution condition and limited dopant with $V_2O_5$ for Karrooite pigment was investigated. With calcination at $1250^{\circ}C{\sim}1400^{\circ}C$, compositions were designed varying $V_2O_5$ molar ratio by increasing 0.02mole to the formula $Mg_1-xTi_2-xM_{2x}O_5$(x = 0.01~0.09 mole). Synthesized pigments were analyzed by XRD, Raman spectroscopy and UV-vis. When $V_2O_5$ was doped from 0.01 to 0.05 mole, single phase of Karrooite was observed at temperature $1300^{\circ}C$ and soaking time 4h by Raman spectroscopy. However, it was found that excess $VO_2$ peak appeared with 0.07 and 0.09 mole of $V_2O_5$ doped to $MgTi_2O_5$. This result indicated that the maximum limit of solid solution is 0.05 mole $V_2O_5$. Karrooite pigments were applied as a ceramic pigment to achieve brown colors in lime magnesia glaze and lime barium graze at both of oxidation and reduction atmosphere. CIE color coordinates are $L^*$ = 40.34, $a^*$ = 9.94, $b^*$ = 21.40 in lime magnesia glaze.

• Journal of the Korean Vacuum Society
• /
• v.2 no.1
• /
• pp.65-72
• /
• 1993

MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.