• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.27-30
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• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.135-138
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• 2007

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.101-106
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• 2003

In order to investigate the mechanical behavior of newly developed materials, the evaluation of mechanical properties using small-size specimen is essential. For those purposes, an instrumented impact testing apparatus, which provides the load-displacement curve under impact loading without oscillations, was devised. To develop the test procedure with the setup, the impact behaviors of various kinds of structural materials such as S45C, SCM4, Ti alloys (Ti-6V-4Al) and Zr-based bulk amorphous metal, were investigated through the instrumented Charpy V-notch impact tests. The calibrations of the dynamic load and displacement that was calculated based on the Newton' second law were carried out through the quasi-static load test and the comparison of a directly measured value using a laser displacement meter. Satisfactory results could be obtained. The crack initiation and propagation processes during impact fracture could be well divided on the curve, depending on the intrinsic characteristic of specimen tested; ductile or brittle. The absorbed impact energy in Zr-basd BAM was largely used for crack initiation not for crack propagation process. The fracture surfaces under impact loading showed different feature when compared with the static cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.85-89
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• 1997

A microstructure of realistic ZnO varistor was constructed by Voronoi network and studied cia computer simulation. The grain size and standard deviation was calculated with new method and have good agreement with experimental data. In this network, the grain boundary conditions of three different type are randomly distributed. The three electrical boundary conditions . (1) type A junctions (high nonlinearity); (2) type B junctions (low nonlinearity); (3) type C junctions (linear with low-resistivity) are fitted from the experimental measurement. The electrical properties were studied by varying the boundary type concentration and the disorder parameter d. The shape of I-V characteristic curve of the network is affected by the type concentration and the disorder parameter has an effect on the double inflected region.

• Journal of Satellite, Information and Communications
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• v.10 no.2
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• pp.75-79
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• 2015

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the ion beam alignment method on the a-C:H thin film. The suitable inorganic thin films for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film were studied. An excellent voltage-transmittance (V-T) and response time curve of the ion beam aligned FFS-LCD was observed with oblique ion beam exposure on the a-C:H thin films. Also, the V-T hysteresis characteristics of the ion beam-aligned FFS-LCD with IB exposure on the a-C:H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.575-578
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• 2004

In this study, we designed HAN(hybrid-aligned nematic) cell using novel tilt angle control method. It was possible to make novel HAN cell using a single polyimide by hot plate baking method. This new HAN cells showed slower response time as compared with conventional HAN cell. However, the alignment state and V-T curve of HAN cell using novel method were acceptable. Also, it showed better C-V characteristic than that of conventional HAN cell.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.8
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• pp.67-73
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• 2015

In a distribution of digital image, there is a serious problem that is the image alteration by a forger. For the problem solution, this paper proposes the forensic decision algorithm of a median filtering (MF) image using the feature vector based on a coefficient of variation (c.v.) of Fourier transform. In the proposed algorithm, we compute Fourier transform (FT) coefficients of row and column line respectively of an image first, then c.v. between neighboring lines is computed. Subsquently, 10 Dim. feature vector is defined for the MF detection. On the experiment of MF detection, the proposed scheme is compared to MFR (Median Filter Residual) and Rhee's MF detection schemes that have the same 10 Dim. feature vector both. As a result, the performance is excellent at Unaltered, JPEG (QF=90), Down scaling (0.9) and Up scaling (1.1) images, and it showed good performance at Gaussian filtering ($3{\times}3$) image. However, in the performance evaluation of all measured items of the proposed scheme, AUC (Area Under ROC (Receiver Operating Characteristic) Curve) by the sensitivity and 1-specificity approached to 1 thus, it is confirmed that the grade of the performance evaluation is rated as 'Excellent (A)'.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.