• Archives of Pharmacal Research
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• v.19 no.4
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• pp.326-334
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• 1996

We investigated the optimum conditions for conversion of water-insoluble components of basidiocarps of Ganoderma lucidum to water-soluble components by hydrolyzing with chitinase. We also tried it with Ganoderma luciclum residue remaining after extracting hot water-soluble components of Ganoderma lucidum. After hydrolyzing under optimum conditions (20 ppm chitinase, 2% Ganoderma lucidum or 6% Ganoderma lucidum residue, at pH 3 and at $ 35^{\circ}C$), the contents of total water-soluble components (polysaccharide or protein) were measured, and it was found that the contents of water-soluble components increased to 1.5-2.7 fold. Michaelis constant, $K_m$ and maximum rate, $V_max$ calculated by Lineweaver-Burk plot for hydrolysis of Ganoderma lucidum were 1.75% and 0.02%/min respectively and those for hydrolysis of Ganoderma lucidum residue were 53.15% and 0.53%/min respectively The protein-bound polysaccharide was isolated after hydrolysis and molecular weights were measured by Sepharose CL-4B gel filtration and compared with the molecular weights of polysaccharide before hydrolysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.63-66
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• 2003

In this paper, the electrical characteristics of single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of poly backseat was researched. The oxide quality was examined through capacitance-voltage characteristics, and besides, it will be describe the capacitance-voltage characteristics of the single oxide layer by semiconductor device simulation.

• International Journal of Computer Science & Network Security
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• v.23 no.6
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• pp.140-146
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• 2023

A detailed survey, applications and challenges of video encoding-decoding systems is discussed in this paper. A novel architecture has also been set aside for future work in the same direction. The literature reviews span the years 1960 to the present, highlighting the benchmark methods proposed by notable academics in the field of video compression. The timeline used to illustrate the review is divided into three sections. Classical methods, conventional heuristic methods, and current deep learning algorithms are all used for video compression in these categories. The milestone contributions are discussed for each category. The methods are summarized in various tables, along with their benefits and drawbacks. The summary also includes some comments regarding specific approaches. Existing studies' shortcomings are thoroughly described, allowing potential researchers to plot a course for future research. Finally, a closing note is made, as well as future work in the same direction.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.57 no.4
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• pp.373-383
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• 2012

Soybean, C.V. Daewonkong, was planted on 25 May and 25 June in 2011, and four temperature gradient, control (ambient temperature in field plot), control + $3^{\circ}C$, control + $4^{\circ}C$, and control + $5^{\circ}C$, were artificially created by controlling the green house system. The obtained results indicated that vegetative growth of soybean plant was beneficially facilitated by planting on May (PM) than planting on June (PJ). The 100-seed weight was significantly higher in PM, and positively affected by increasing temperature, whereas the weight was reduced in control + $5^{\circ}C$ plot. Isoflavone content and fatty acid composition were analyzed to determine the effects of plating date and growth temperature. Isoflavone content was higher in PJ plot ($1479.8{\mu}g/g$) than in PM plot ($1201.8{\mu}g/g$), however, the influence of growth temperature varied with planting date. The composition of oleic acid was positively affected by increasing temperature, whereas the proportions of linoleic and linolenic acid were reduced. The numbers of node was considered as a major variable in the regression equations estimated using forward stepwise regression analysis for isoflavone content and unsaturated fatty acid under different environmental conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.84-84
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• 2000

수소화된 비정질 실리콘(a-Si:H)과 미세결정질 실리콘 ($\mu$c-Si:H)은 저온.건식 공정인 PECVD로 값싼 유리 기판을 사용하여 넓은 면적에 증착이 가능하다는 큰 장점으로 인해 광전소자(photovoltaic device)와 박막 트랜지스터(TFTs)등에 폭넓게 응용되어 왔으며 최근에는 nm 크기의 실리콘 결정(nc-Si)에서 가시광선 영역의 발광 현상이 발견됨에 따라 광소자로서의 특성을 제어하기 위해서는 성장 조건과 공정 변수에 따른 구조 변화에 대한 연구가 선행되어야 한다. 본 연구에서는 UHV-ECR-PECVD 법을 이용하여 H2로 희석된 SiH4로부터 a-Si:H과 $\mu$c-Si:H를 증착하였다. 그림 1은 SiH4 20sccm/H2 50sccm/25$0^{\circ}C$에서 기판의 DC bias를 변화시키면서 박막을 증착시킬 때 나타나는 박막의 구조 변화를 raman spectrum의 To phonon peak의 위치와 반가폭의 변화로 나타낸 것이다. 비정질 실리콘 박막은 DC bias를 증가시킴에 따라 무질서도가 증가하다가 어떤 critical DC bias에서 최대치를 이룬후 다시 질서도가 증가한다. 이온의 충격력에 의해 박막내에 응력이 축적되면 박막의 에너지 상태가 높아지고 이 축적된 응력이 ordering에 대한 에너지 장벽을 넘을 수 있을 만큼 커지게 되면 응력이 풀리면서 ordering이 가능해지는 것으로 생각된다. 그림 2는 수소 결합 형태의 변화이다. 박막의 무질서도가 증가할 경우 알려진 바와 같이 2000cm-1근처의 peak은 감소하고 2100cm-1 부근이 peak이 증가하는 현상을 보였다. 본 논문에서는 여러 공정 변수, 특히 DC bias에 따르는 박막의 구조 변화와 다른 성장 조건(온도, 유량비)이 critical DC bias나 결정화, 결정성 등에 미치는 영향에 대한 분석결과를 보고하고자 한다.등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다. 이것은 quinua 대체량 증가에 따른 반죽의 안정성이 저하되어 버린 것으로 생각되어진다. 더욱이 lipase를 첨가하면 반죽이 분화하는 경향이 보여졌지만 첨가량 75ppm에 있어서 상당히 비용적의 증대가 보였다. 이것은 lipase의 가수분해에 의해

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.340-341
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• 2012

In this work, we investigated the effects of temperature stress on flatband voltage (VFB) shifts of HfO2-SiO2 double gate dielectrics devices. Fig. 1 shows a high frequency C-V of the device when a positive bias for 10 min and a subsequent negative bias for 10 min were applied at room temperature (300 K). Fig. 2 shows the corresponding plot when the same positive and negative biases were applied at a higher temperature (473.15 K). These measurements are based on the BTS (bias temperature stress) about mobile charge in the gate oxides. These results indicate that the positive bias stress makes no difference, whereas the negative bias stress produces a significant difference; that is, the VFB value increased from ${\Delta}0.51$ V (300 K, Fig. 1) to ${\Delta}14.45$ V (473.15 K, Fig. 2). To explain these differences, we propose a mechanism on the basis of oxygen vacancy in HfO2. It is well-known that the oxygen vacancy in the p-type MOS-Cap is located within 1 eV below the bottom of the HfO2 conduction band (Fig. 3). In addition, this oxygen vacancy can easily trap the electron. When heated at 473.15 K, the electron is excited to a higher energy level from the original level (Fig. 4). As a result, the electron has sufficient energy to readily cross over the oxide barrier. The probability of trap about oxygen vacancy becomes very higher at 473.15 K, and therefore the VFB shift value becomes considerably larger.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.73-76
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• 2005

To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

• Journal of the Korean Geotechnical Society
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• v.16 no.2
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• pp.61-70
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• 2000

When clay foundations of embankments are treated with vertical drain, essentially, the strain occurs to vertical direction but the water flow is radial. The initial horizontal permeability and its variation with the vertical compression are key parameters for the choice of the type of drains, their spacing, and affect to the cost of the project. In this study, CRS consolidation test is performed to investigate the anisotropic characteristics of decomposed mudstone soil and direct permeability test is performed on the same specimens. The results of testing show that Ch is larger than Cv. specially, the Cv - $\sigma$v relationship for a soil sample is viewed from three different curve segments corresponding to overconsolidated, transition and normally consolidated states. The anisotropic ratio, rk(kh/kv) is 2.19. Coefficient of permeability in normally consolidated state is related to its void ratio and permeability parameter n. C can be determined from a linear plot of log[k(1+e)] versus log e. The slope, n, of graphs is the same, whereas the vertical intercept, log C, seems to vary somewhat for anisotropic.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.576-576
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• 2012

High quality single crystalline strain controlled wurtzite ZnO nanowire arrays have been grown on conductive silicon and ITO substrates by a facile hydrothermal method. The diameter of the nanowires was found to be less than 90 nm approximately for both of the two kinds of substrates. The quality of the ZnO nanowire arrays is dramatically improved by hanging the substrate above from the bottom of the Teflon lined autoclave. The structural investigation indicates the preferential orientation of the nanowire along c-axis. In order to make the convincible comparison, the photoluminescence property of the nanowire arrays grown under different conditions are measured, the sharp near band edge emission from PL, low turn-on voltage ($1.9V/{\mu}m$) from field emission measurement and Fowler-Nordheim plot was investigated from ZnO nanowire arrays grown by proposed substrate hanging method.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.179-179
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• 2011

관통전극(TSV, Trough Silicon Via) 기술은 전자부품의 소형화, 고성능화, 생산성 향상을 이룰 수 있는 기술이다. Cu는 현재 배선 기술에 적용되고 있고 전기적 저항이 낮아서 TSV filling 재료로 사용된다. 하지만 확산 방지막에 의해 완벽히 감싸지지 않는다면, Cu+은 빠르게 절연막을 통과하여 Si 웨이퍼로 확산된다. 이런 현상은 절연막의 누설과 소자의 오동작 등의 신뢰성 문제를 일으킬 수 있다. 현재 TSV의 제조와 열 및 기계적 응력에 관한 연구는 활발히 진행되고 있으나 Biased-Thermal Stress(BTS) 조건하의 Cu 확산에 관한 연구는 활발하지 않는 것이 실정이다. 이를 위해 본 연구에서는 TSV용 Cu 확산 방지막 Ti에 대해 Cu+의 drift 억제 특성을 조사하였다. 실험을 위해 Cu/확산 방지막/Thermal oxide/n-type Si의 평판 구조를 제작하였고 확산 방지막의 두께에 따른 영향을 조사하기 위해 Ti의 두께를 10 nm에서 100 nm까지 변화하였으며 기존 Cu 배선 공정에서 사용되는 확산 방지막 Ta와 비교하였다. 그리고 Cu+의 drift 측정을 위해 Biased-Thermal Stress 조건(Thermal stress: $275^{\circ}C$, Bias stress: +2MV/cm)에서 Capacitance 및 Timedependent dielectric breakdown(TDDB)를 측정하였다. 그 결과 Time-To Failure(TTF)를 이용하여 Cu+의 drift를 측정할 수 있었으며, 확산 방지막의 두께가 증가할수록 TTF가 증가하였고 물질에 따라 TTF가 변화하였다. 따라서 평판 구조를 이용한 본 실험의 Cu+의 drift 측정 방법은 향후 TSV 구조에서도 적용 가능한 방법으로 생각된다.