• KSBB Journal
• /
• v.9 no.2
• /
• pp.165-173
• /
• 1994

In this paper we have described the structural characterization of recombinant bovine somatotropin produced in Escherichia coli. Recombinant bovine somatotropin consists of 191 amino acid residues with a calculated molecular weight of 21,802 Da. For fragmentation of recombinant bovine somatotropin, we have used trypsin, Staphylococcus aureus V8 pretease, CNBr, and mild acid hydrolysis method. Digestion and cleavage with these proteases and chemicals yielded peptides of various size for amino acid sequence determination. The N-terminal sequence analysis was carried out up to thirty residues. Because the design of the recombinant bovine somatotropin gene for expression was such that the coding sequence begins with an initiation codon, AUG, before Ala, the first amino acid of bovine somatotropin, we could expect the initial amino acid as N-formyl Met. But the first amino acid of this protein, expressed in E. coli cells as inclusion bodies, was Ala. And the amino acid composition of RP-HPLC purified recombinant bovine somatotropin was determined and no essencial difference was observed. The amino acid sequence of the recombinant bovine somatotropin was identical to that predicted from its recombinant gene. There was no processing or replacement of amino acid residues in recombinant bovine somatotropin expressed in E. coli. The hydropathy plot of recombinant bovine somatotropin revealed a hydrophobic region at the NH2-terminus and hydrophilic region at the COOH-terminus. The E. coli expression system is thought to be valuable for the expression of recombinant bovine somatotropin because protein was processed to remove the N-terminal Met residue by methionyl-aminopeptidase autonomously.

• Preventive Nutrition and Food Science
• /
• v.2 no.4
• /
• pp.354-359
• /
• 1997

Optimal cultivation conditions for the production of phenylalanine ammonia-lyase(PAL) from Rhodotorula aurantiaca K-505 were selected, and the kinetic parameters of the produced PAL were determined. The most suitable carbon and nitrogen sources were glucose and tryptone, respectively. The strain expressed PAL constituttively when using the optimized semi-complex media. High cell density culture could be critical for maximal production of PAl since the PAL ynthesis was growth associated. maximum PAL activity was observed at initial pH 6.0. although the ll growth was not markedly affected by temperature between 22 and 28$^{\circ}C$, the cells yielded the maximum PAL activity when cultivated at 22$^{\circ}C$. The maximum activity for deamination of L-phenylalnine to trans-cinnamic acid was observed around pH 8.8. The PAL activity gave the maximum at 45$^{\circ}C$, and greatly decreased at higher than 5$0^{\circ}C$. Activation energy({TEX}$E_{a}${/TEX}) calculated from Arrhenius equation was 6.28 kcal/mol in the range of 22$^{\circ}C$ to 4$0^{\circ}C$. A oolf plot showed that the enzyme reaction follows Michaelis-Menten equation, whose {TEX}$K_{M}${/TEX} and {TEX}$V_{max}${/TEX} values were 4.65$\times${TEX}$10^{-3}${/TEX} M and 0.89$\mu$ mol/mg-min respectively.

• Progress in Superconductivity
• /
• v.6 no.1
• /
• pp.89-94
• /
• 2004

The policrystalline$SmBa_2$$Cu_2$$O_{y}$ was synthesized by the solid state reaction method. The dependence of AC susceptibility on temperature and applied ac field was studied. The critical temperature $T_{c}$ is about 92 K. As the ac field is increased, the slope and the value of real part of susceptibility become smaller and the peak position of imaginary part $T_{P}$ was shifted to a lower temperature with peak broadening. Using Bean's model, we determined intergrain critical current density $J_{c}$ and obtained $44 A/{cm}^2$ at 75 K. From the relation of the $J_{c}$ (T)=($1-T/T_{c}$ )$^{\beta}$ we obtained $\beta$=0.8 and found that the Josephson junction type of the $SmBa_2$$Cu_2$$O_{y}$ is SIS junction. The peak of the imaginary part shifts to higher temperature with increasing frequency, f. from Arrhenius plot, we obtained the activation energy of about 0.96 eV.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.19
• /
• pp.39-46
• /
• 1975

The optimum plot size and shape for soybean yield trials were estimated by using two different soybean varieties, Kumkang-daelip and Clark. Long narrow shape plot was generaIly showed lower C.V. value as compared to the plots consisted of more row number with short row length. The results obtained in this experiment provided the optimum size and shape of plots for Clark as 1. 4m x 6m, and for Kumkang-dailip as 1.4m $\times$ 9m, respectively.

• Korean Journal of Materials Research
• /
• v.5 no.1
• /
• pp.3-11
• /
• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Corrosion Science and Technology
• /
• v.17 no.1
• /
• pp.20-29
• /
• 2018

Ti and its alloys show the excellent corrosion resistance to chloride environments, but they show less corrosion resistance in HCl, $H_2SO_4$, NaOH, $H_3PO_4$, and especially HF environments at high temperature and concentration. In this study, we used the commercially pure titanium and Ti-6Al-4V alloy, and evaluated the effect of the manufacturing process on the electrochemical properties. We used commercial products of rolled and forged materials, and made additive manufactured materials by DMT (Directed Metal Tooling) method. We annealed each specimen at $760^{\circ}C$ for one hour and then air cooled. We performed anodic polarization test, AC impedance measurement, and Mott-Schottky plot to evaluate the electrochemical properties. Despite of the difference of its microstructure of CP-Ti and Ti-6Al-4V alloys by the manufacturing process, the anodic polarization behavior was similar in 20% sulfuric acid. However, the addition of 0.1% hydrofluoric acid degraded the electrochemical properties. Among three kinds of the manufacturing process, the electrochemical properties of additive manufactured CP-Ti, and Ti-6Al-4V alloys were the lowest. It is noted that the test materials showed a Warburg impedance in HF acid environments.

• Korean Journal of Food Science and Technology
• /
• v.36 no.2
• /
• pp.349-354
• /
• 2004

Predictive growth model of Vibrio parahaemolyticus in modified surimi-based imitation crab broth was investigated. Growth curves of V. parahaemolyticus were obtained by measuring cell concentration in culture broth under different conditions ($Initial\;cell\;level,\;1{\times}10^{2},\;1{\times}10^{3},\;and\;1{\times}10^{4}\;colony\;forming\;unit\;(CFU)/mL$; temperature, 15, 25 37, and $40^{\circ}C$; pH 6, 7, and 8) and applying them to Gompertz model. Microbial growth indicators, maximum specific growth rate (k), lag time (LT), and generation time (GT), were calculated from Gompertz model. Maximum specific growth rate (k) of V. parahaemolyticus increased with increasing temperature, reaching maximum rate at $37^{\circ}C$. LT and GT were also the shortest at $37^{\circ}C$. pH and initial cell number did not influence k, LT, and GT values significantly (p>0.05). Polynomial model, $k=a{\cdot}\exp(-0.5{\cdot}((T-T_{max}/b)^{2}+((pH-pH_{max)/c^{2}))$, and square root model, ${\sqrt{k}\;0.06(T-9.55)[1-\exp(0.07(T-49.98))]$, were developed to express combination effects of temperature and pH under each initial cell number using Gauss-Newton Algorism of Sigma plot 7.0 (SPSS Inc.). Relative coefficients between experimental k and k Predicted by polynomial model were 0.966, 0.979, and 0.965, respectively, at initial cell numbers of $1{\times}10^{2},\;1{\times}10^{3},\;and\;1{\times}10^{4}CFU/mL$, while that between experimental k and k Predicted by square root model was 0.977. Results revealed growth of V. parahaemolyticus was mainly affected by temperature, and square root model showing effect of temperature was more credible than polynomial model for prediction of V. parahaemolyticus growth.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.213-213
• /
• 2012

It has been known that quantum confinement effect of CdSe nanocrystal was observed by increasing the number of deposition cycle using successive ionic layer adsorption and reaction (SILAR) method. Here, we report on thermally-induced quantum confinement effect of CdSe at the given cycle number using spin-coating technology. A cation precursor solution containing $0.3\;M\;Cd(NO_3)_2{\cdot}4H_2O$ is spun onto a $TiO_2$ nanoparticulate film, which is followed by spinning an anion precursor solution containing $0.3\;M\;Na_2\;SeSO_3$ to complete one cycle. The cycle is repeated up to 10 cycles, where the spin-coated $TiO_2$ film at each cycle is heated at temperature ranging from $100^{\circ}C$ to $250^{\circ}C$. The CdSe-sensitized $TiO_2$ nanostructured film is contacted with polysulfide redox electrolyte to construct photoelectrochemical solar cell. Photovoltaic performance is significantly dependent on the heat-treatment temperature. Incident photon-to-current conversion efficiency (IPCE) increases with increasing temperature, where the onset of the absorption increases from 600 nm for the $100^{\circ}C$- to 700 nm for the $150^{\circ}C$- and to 800 nm for the $200^{\circ}C$- and the $250^{\circ}C$-heat treatment. This is an indicative of quantum size effect. According to Tauc plot, the band gap energy decreases from 2.09 eV to 1.93 eV and to 1.76 eV as the temperature increases from $100^{\circ}C$ to $150^{\circ}C$ and to $200^{\circ}C$ (also $250^{\circ}C$), respectively. In addition, the size of CdSe increases gradually from 4.4 nm to 12.8 nm as the temperature increases from $100^{\circ}C$ to $250^{\circ}C$. From the differential thermogravimetric analysis, the increased size in CdSe by increasing the temperature at the same deposition condition is found to be attributed to the increase in energy for crystallization with $dH=240cal/^{\circ}C$. Due to the thermally induced quantum confinement effect, the conversion efficiency is substantially improved from 0.48% to 1.8% with increasing the heat-treatment temperature from $100^{\circ}C$ to $200^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.1
• /
• pp.47-52
• /
• 2008

As the packing density of IC devices gets ever higher, the thickness of the gate $SiO_2$ layer of the MOS devices is now required to be reduced down to 1 nm. For such a thin $SiO_2$ layer, the MOS device cannot operate properly because of tunneling current and threshold voltage shift. Hence there has been much effort to develop new dielectric materials which have higher dielectric constants than $SiO_2$ and is free from such undesirable effects. In this work, the physical and electrical characteristics of ALD $ZrO_2$ film have been studied. After deposition of a thin ALD $ZrO_2$ film, it went through thermal treatment in the presence of argon gas at $800^{\circ}C$ for 1 hr. The characteristics of morphology, crystallization kinetics, and interfacial layer of $Pt/ZrO_2/Si$ samples have been investigated by using the analyzing instruments like XRD, TEM and C-V plots. It has been found that the characteristics of the $Pt/ZrO_2/Si$ device was enhanced by the thermal treatment.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.8
• /
• pp.12-16
• /
• 2002

It is confirmed that the ITO(Indium Tin Oxide) thin films can be etched by low-temperature plasma at atmospheric pressure. The etching happened deepest at a hydrogen flow rate of 4 sccm, and the etch rate was 120 /min. The etching speed corresponded to the H$\alpha$* emission intensity The etching mechanism of the ITO thin films is as follows; thin films were reduced by H$\alpha$*, and the metal compound residues were detached from the substrate by reacting on the CH* The etching was started after etching time of initial 50 sec and above the threshold temperature of 145$^{\circ}C$. The activation energy of 0.16 eV(3.75 Kcal/mole) was obtained from the Arrehenius plots.