• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.629-637
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• 1998

The HF-SCF, MP2 and B3LYP calculations have been performed on the two conceivable clusters $(HF)_2(CO)$ trimers as well as their dimer complexes FH…FH, FH…CO and FH…OC applying $6-31+G^{\ast}^{\ast}$, and $6-311+G^{\ast}^{\ast}$ basis sets. A variety of ground state properties of these trimer complexes have been listed, and compared with corresponding properties of isolated monomers and combined dimers. It was calculated that FH…CO is more stable than FH…OC by average 0.85 kcal/mol and F-H…F-H…C≡O is more stable than F-H…F-H…O≡C by 1-2 kcal/mol. The C≡O stretching bands of the F-H…F-H…C≡O and F-H…F-H…O≡C were red shifted by 24, $37\;cm^{-1}$ compared with the FH…CO and FH…OC respectively. Also, H-F stretching bands were red shifted by 54 and $353\;cm^{-1}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.67-72
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• 2004

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1589-1591
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• 2003

The microwave dielectric properties of $TiTe_3O_8-CaF_2$ ceramics were investigated. All sample of $TiTe_3O_8-CaF_2$ ceramics were prepared by the conventional mixed oxide method, and sintered in the temperature of $730^{\circ}C{\sim}750^{\circ}C$. The structural properties of $TiTe_3O_8-CaF_2$ ceramics were investigated by the X-ray diffractor meter. According to the X-ray diffraction patterns of $TiTe_3O_8-CaF_2$ ceramics, the major phase of the cubic $TiTe_3O_8$ were presented. In the case of $1molTiTe_3O_8-0.1molCaF_2$ ceramics sintered at $740^{\circ}C$ for 5hr., the bulk density, dielectric constant, quality factor were $2.8g/cm^3$, 39.1, 36.100GHz, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.193-193
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• 2013

Perfluorocarbons (PFCs) have been suggested as possible replacements for $SF_6$ and the fluorocarbons used in and emitted during technological plasma treatments because PFCs have significantly low greenhouse warming potentials. Of many PFCs, c-$C_4F_8$ and 2-$C_4F_8$ attract special attention because of their high CF2 radicallevels in commercial plasma treatments. Accordingly, several experimental and theoretical studies of these $C_4F_8$ species have been conducted, although only the geometries at their stationary states and their adiabatic electron affinities (EAs) have been determined. However, this information is not sufficient for a deep understanding of all the possible fates and roles of $C_4F_8$ species and their fragments in plasma phases. Although the performance and reliability ofeach DFT functional have been examined carefully by the development team of each functional form with respect to the training and test data sets of well-known molecular systems, no PFC was included in the data sets. So a careful additional assessment of the reliability of DFT functionals for the study of PFC systems is highly required. In order to find a DFT method appropriate to PFCs, the geometry, energy, and chemical reaction properties of $C_4F_8$ were calculated and compared with reference data.

• Journal of the Chungcheong Mathematical Society
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• v.2 no.1
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• pp.75-80
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• 1989

In this paper we introduce the notion of C-lindel$\ddot{o}$f spaces, and we discuss some of the properties that C-Lindel$\ddot{o}$f spaces satisfy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.465-468
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• 1999

Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.341-345
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• 2003

ZnWO$_4$shows excellent frequency selectivity due to its high quality factor(Q${\times}$f) at microwave frequencies. However, in order to use ZnWO$_4$as multilayered wireless communication components, its other properties such as sintering temperature(105$0^{\circ}C$). $$\tau$_f$(-70ppm/$^{\circ}C$) and $$\varepsilon$_r$(15.5) should be modified. In present study, TiO$_2$and LiF were used to improve the microwave dielectric and sintering properties of ZnWO$_4$. TiO$_2$ additions to ZnWO$_4$changed $\tau$$_{f}$ from negative to positive value, and also increased $$\varepsilon$_r$, due to its high $$\tau$_f$(＋400ppm$^{\circ}C$) and $$\varepsilon$_r$(100). At 20 mol% TiO$_2$ addition, $$\tau$_f$was controlled to near zero ppm/$^{\circ}C$ with $$\varepsilon$_r$=19.4 and Q${\times}$ f=50000GHz. However, the sintering temperature was 110$0^{\circ}C$. LiF addition to the ZnWO$_4$＋TiO$_2$ mixture greatly reduced the sintering temperature from 110$0^{\circ}C$ to 85$0^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the $$\tau$_f$value due to its high negative $$\tau$_f$ value. Therefore, by controlling the TiO$_2$and LiF amount. temperature stable LTCC(Low Temperature Cofired Ceramics) material with low loss in the ZnWO$_4$-TiO$_2$-LiF system could be fabricated.d.d.

• Journal of the Korean Chemical Society
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• v.43 no.1
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• pp.52-57
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• 1999

The anionic complexes, [ln($C_6F_5)_4$]-, which are thermal and moisture sensitive, have been prepared by the reaction of In($C_6F_5)_3{\cdot}D(D=CH_3CN$, O($C_2H_5)_2$) with the system ($CH_3)_3SiC_6F_5$/CsF, $C_6F_5$MgBr or Cd($C_6F_5)_2$. The stable anionic indium(III) complexes are obtained through cation exchange with PNPCI ([PNP]= bis(triphenylphosphino)ammonium). The pure substance is obtained by column chromatography. These new anionic complexes are unambiguously identifed by NMR-spectroscopy, IR spectroscopy, molecular weight, DTA/TG and elemental analysis.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1046-1054
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• 2001

Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.