• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• 대한화학회지
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• 제36권4호
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• pp.517-522
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• 1992

10$^{\circ}C$와 20$^{\circ}C$에서 ${\beta}$-피콜린과 치환된 벤조일클로라이드류의 반응을 압력변화에 따라 아세토니트릴용매내에서 전기전도도법으로 연구하였다. 유사 1차속도상수와 2차속도상수로부터 여러 가지 활성화파라미터들(${\Delta}V{\neq}$, ${\Delta}{\beta}{\neq}$, ${\Delta}H{\neq}$, ${\Delta}S{\neq}$ and ${\Delta}G{\neq}$)을 구하고, Hammett ${\rho}$값의 압력의존성을 설명하였다. ${\Delta}V{\neq}$, ${\Delta}{\beta}{\neq}$ 및 ${\Delta}S{\neq}$ 는 모두 음의 값을 나타내었고, 압력증가에 따라 속도상수와 Hammett ${\rho}$값은 증가하며, 결합형성이 더욱 촉진된 반응메카니즘으로 진행됨을 알 수 있었다.

• 대한화학회지
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• 제35권1호
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• pp.64-69
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• 1991

아세토니트릴 용매 중에서 p-methylphenacyl arenesulfonate와 피리딘의 반응을 1∼2000 bars 및 35∼55$^{\circ}C$에서 전기전도도법으로 측정하였다. 반응속도는 온도와 압력의 증가에 따라 증가하였으며, 이탈기에 전자받개 치환기가 도입됨에 따라 증가하였다. 활성화엔탄피, 엔트로피 및 부피로부터 이 반응은 전반적으로 S$_N$2 반응으로 진행되나 압력이 증가함에 따라 C${\cdots}$O 결합분열이 더욱 진전된 dissociative S$_N$2 반응으로 진행됨을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.2013-2018
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• 2014

The adsorption and decomposition of trimethylene oxide ($C_3H_6O$) molecule on the Al(111) surface were investigated by the generalized gradient approximation (GGA) of density functional theory (DFT). The calculations employed a supercell ($6{\times}6{\times}3$) slab model and three-dimensional periodic boundary conditions. The strong attractive forces between $C_3H_6O$ molecule and Al atoms induce the C-O bond breaking of the ring $C_3H_6O$ molecule. Subsequently, the dissociated radical fragments of $C_3H_6O$ molecule oxidize the Al surface. The largest adsorption energy is about -260.0 kJ/mol in V3, V4 and P2, resulting a ring break at the C-O bond. We also investigated the decomposition mechanism of $C_3H_6O$ molecules on the Al(111) surface. The activation energies ($E_a$) for the dissociations V3, V4 and P2 are 133.3, 166.8 and 174.0 kJ/mol, respectively. The hcp site is the most reactive position for $C_3H_6O$ decomposing.

• 대한화학회지
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• 제18권4호
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• pp.223-238
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• 1974

염화포름산 알킬의 할로겐화 이온 교환반응을 반응속도론적으로 연구하고, 이의 전자 구조적 특성을 CNDO/2 MO계산으로 연구하였으며 이로부터 구조와 반응성 간의 관계를 논의하였다. 염화포름산 알킬의 에너지면에서의 가장 안정한 입체배치가 알킬기와 염소원자 사이가 서로 트랜스인 입체배치임을 알았으며, 결합주위의 회전장애가 {\pi}-전자 비편재화에 기인됨을 밝혔다. 염화포름산 알킬은 하전분리가 심한 극성물질이며, 이것이 카르보닐 산소와 알콕시 산소의 효과 및 염소의 효과에 기인됨을 밝혔다. 반응속도에 미치는 용매효과는 $(CH_3)_2CO>CH_3CN{\gg}MeOH$순으로 반응성이 감소되는 작용을 나타냈으며, 친핵성도는 양성자성 용매중에서 $I^->Br^->Cl^-$, 비양자성 용매 중에서 $Cl^->Br^->I^-$이었으며 알킬기의 기여는 $CH_3->C_2H_5->i-C_3H_7-$순이었다. 초기상태와 천이상태의 안정화 기여를 기초로 용매효과를 해석하였으며 초기상태 탈용매화의 특성으로 친핵성도를 논의하였다. 이 반응에 대하여 가장 유리한 메카니즘을 첨가-제거 메카니즘으로 제안하였다. 염화포름산 알킬의 반응성을 결정하는 구조적 요인은 하전, C-Cl 결합에 대하여 ${\alpha}^{\ast}$인 LUMO의 에너지준위 및 이 MO에서 C-Cl결합의 반결합세기임을 밝혔다.

• Bulletin of the Korean Chemical Society
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• 제6권6호
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• pp.354-358
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• 1985

Carbon-13 nuclear spin-lattice relaxation times have been measured over the range of temperature from 213K to 353K for carbons in n-heptane in neat liquid. The experimental data have been analyzed to obtain informations of segmental motions in the chain polymers by employing a model which describes jumps between several discrete states with different lifetimes. The overall reorientation of the molecule is assumed to be isotropic rotational diffusion. From the above analysis the activation energies of each C-C bond reorientation as well as the overall reorientation have been obtained through the Arrhenius-type temperature dependence.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• 대한화학회지
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• 제19권3호
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• pp.149-155
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• 1975

플라스틱 결정체인 피발산의 temperature-dependent wide-line NMR line width, second monent 및 spin-lattice relaxation times 의 결과는 이 결정체의 특이한 운동학적 성질 및 수소결합에 기인된 것으로 해석된다. 이 분자의 운동학적 성질은 $C_3-C_3'$ reorientation 및 self-diffusion 으로 구성 되었음을 확인했다. Wide-line NMR 연구결과는 또한 Pople-Karasz 융해설과 비교검토되었고, 이 이론과의 차이점은 피발산의 수소결합에 기인되었음을 알아냈다.

• Bulletin of the Korean Chemical Society
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• 제13권3호
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• pp.296-306
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• 1992

$^{13}C$ spin-lattice relaxation times were measured for n-alkanes of moderate chain length, ranging from n-octane to n-dodecane, under the condition of proton broad-band decoupling within the temperature range of 248-318 K in order to gain some insight into basic features of segmental motions occurring in long chain ploymeric molecules. The NOE data showed that except for methyl carbon-13 dipole-dipole interactions between $^{13}C$ and directly bonded $^1H$ provide the major relaxation pathway, and we have analyzed the observed $T_1data$ on the basis of the internal rotational diffusion theory by Wallach and the conformational jump theory by London and Avitabile. The results show that the internal rotational diffusion constants about C-C bonds in the alkane backbone are all within the range of $10^9\;-10^10\;sec^{-1}$ in magnitude while the mean lifetimes for rotational isomers are all of the order of $10^{-11}\;-10^{-10}$ sec. Analysis by the L-A theory predicts that activation energies for conformational interconversion between gauche and trans form gradually increase as we move from the chain end toward the central C-C bond and they are within the range of 2-4 kcal/mol for all the compounds investigated.