• Korean Journal of Materials Research
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• v.10 no.11
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• pp.778-783
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• 2000

Effects of the $Al_2$O$_3$surface protective layer, deposited on the SnO$_2$sensing layer by aerosol flame deposition (AFD) method, on the sensing properties of SnO$_2$thin film ags sensors were investigated.Effects of Pt doping to the $Al_2$O$_3$surface protective layer on the selectivity of CH$_4$ gas were also investigated. 0.3$\mu\textrm{m}$ thick SnO$_2$thin sensing layers on Pt electrodes were prepared by R.F. magnetron sputtering with R.F. power of 50 W, at working pressure of 4mTorr, and at 20$0^{\circ}C$ for 30 min. $Al_2$O$_3$surface protective layers on SnO$_2$layers were prepared by AFD using a diluted aluminum nitrade (Al(NO$_3$).9$H_2O$) solution. The sensitivity of CO gas in the SnO$_2$gas sensor with an $Al_2$O$_3$surface protective layer was significantly decreased. But that of CH$_4$gas remained almost same with pure SnO$_2$gas sensor. This result shows that the selectivity of CH$_4$gas is increased because of the $Al_2$O$_3$surface protective layer. In the case of SnO$_2$gas sensors with Pt-doped $Al_2$O$_3$surface protective layers, low sensing property to CO gas and high sensing property to CH$_4$were observed. This results in the increasing of selectivity of CH$_4$gas selectivity are discussed.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.163-175
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• 1995

Metal free phthalocyanine($H_2Pc$) partially doped with iodine, $H_2Pc(I)x$, has been made to improve photosensitizing efficiency of ZnO/$H_2Pc$. The content of iodine dopant level(x) for $H_2Pc(I)x$ upon $H_2Pc$ polymorphs was characterized as ${\chi}-H_2Pc(I)_{0.92}$ and ${\beta}-H_2Pc(I)_{0.96}$ by elemental analysis. Characterization of iodine-oxidized $H_2Pc$ were investigated by TGA (thermogravimetric analysis), UV-Vis, FT-IR, Raman and ESR (electron spin resonance) spectrum, and the adsorption properties of $H_2Pc(I)x$ on ZnO were characterized by means of Raman and ESR studies. TGA for $H_2Pc(I)x$ showed a complete loss of iodine at approximately 265$^{\circ}C$ and the Raman spectrum of $H_2Pc(I)x$ and ZnO/$H_2Pc(I)x$ at 514.5 nm showed characteristic $I_3^-$ patterns in the frequency region 90∼550 $cm^{-1}$. ZnO/$H_2Pc(I)x$ exhibited a very intense and narrow ESR signal at $g=2.0025{\pm}0.0005$ compared to $H_2Pc$/ZnO. Iodine doped ZnO/$H_2Pc(I)x$ showed a better photosensitivity compared to iodine undoped ZnO/$H_2Pc$. That is, the surface photovoltage of ${\chi}-H_2Pc(I)_{0.92}$/ZnO was approximately 31 times greater than that of ZnO/${\chi}-H_2Pc$ and ZnO/${\beta}-H_2Pc(I)_{0.96}$ was 5 times more efficient than ZnO/${\beta}-H_2Pc$ at 670 nm. And the dependence of photosensitizing effect upon $H_2Pc$ polymorphs was exhibited that the surface photovoltage of ZnO/${\chi}-H_2Pc(I)_{0.92}$ was approximately 5 times greater than ZnO/${\beta}-H_2Pc(I)_{0.96}$ at 670 nm. Therefore Iodine doping of H_2Pc$ resulted in increase in photoconductivity of $H_2Pc$ and photovoltaic effect of ZnO/$H_2Pc$ in the visible region.