• Journal of IKEEE
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• v.22 no.3
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• pp.712-715
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• 2018

ZnO nanorods were grown on ZnO seed films by a hydrothermal method. The rf sputtered ZnO thin films annealed at $600^{\circ}C$ were employed as the seed films. The ZnO nanorods were annealed at $400^{\circ}C$ and $800^{\circ}C$, respectively. The structural and optical property dependence of ZnO nanorods on the annealing was studied. The UV peak showing the strong intensity and narrow FWHM was obtained from ZnO nanorods annealed at $400^{\circ}C$.

• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.1044-1055
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• 1994

The preparation of ZrC/SiC mixed powders from $ZrSiO_4/C$ and $ZrSiO_4/Al/C$ systems was attempted in the temperature range below $1600^{\circ}C$ under Ar or $Ar/H_2$ gas flow(100-500ml/min). The formation mechanism and kinetics of ZrC/SiC were suggested and the resultant powders were characterized. In $ZrSiO_4/C$ system, ZrC and SiC were formed by competitive reaction of $ZrO_2(s)$ and SiO(g) with carbon at temperature higher than $1400^{\circ}C$. The apparent activation energy for the formation of ZrC was approximately 18.5kcal/mol($1400-1600^{\circ}C$). In $ZrSiO_4/Al/C$ system, ZrC was formed by reaction of ZrO(g) with Al(l, g) and carbon at temperature higher than $1200^{\circ}C$, and SiC was formed by reduction-carbonization of SiO(g) with Al(l, g) and carbon at temperature higher than $1300^{\circ}C$. The products obtained at $1600^{\circ}C$ for 5h consisted of ZrC with lattice constant of $4.679{\AA}$ and crystallite size of $640{\AA}$, and SiC with lattice constant of $4.135{\AA}$ and crystallize size of $500{\AA}$. And also, the mean particle size was about $21.8{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.392-398
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• 2014

$Al_2O_3$-SiC composites reinforced with SiC whisker ($SiC_w$) were fabricated using three different methods. In the first, $Al_2O_3-SiC_w$ starting materials were used. In the second, $Al_2O_3-SiC_w$-SiC particles ($SiC_p$) were used, which was intended to enhance the mechanical properties by $SiC_p$ reinforcement. In the third method, reaction-sintering was used with mullite-Al-C-$SiC_w$ starting materials. After hot-pressing at $1750^{\circ}C$ and 30 MPa for 1 h, the composites fabricated using $Al_2O_3-SiC_w$ and $Al_2O_3-SiC_w-SiC_p$ showed strong mechanical properties, by which the effects of reinforcement by $SiC_w$ and $SiC_p$ were confirmed. On the other hand, the mechanical properties of the composite fabricated by reaction-sintering were found to be inferior to those of the other $Al_2O_3$-SiC composites owing to its relatively lower density and the presence of ${\gamma}-Al_2O_3$ and ${\gamma}-Al_{2.67}O_4$. The greatest hardness and $K_{1C}$ were 20.37 GPa for the composite fabricated using $Al_2O_3-SiC_w$, and $4.9MPa{\cdot}m^{1/2}$ using $Al_2O_3-SiC_w-SiC_p$, respectively, which were much improved over those from the monolithic $Al_2O_3$.

• Resources Recycling
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• v.18 no.3
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• pp.49-54
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• 2009

The effect of MgO in synthesis of alinite clinker was investigated. Clinker of alinite composition ratio and alintite clinker substituted for MgO of 3.77% were sintered at $760^{\circ}C$ and between $800^{\circ}C$ and $1,400^{\circ}C$ at the interval of $100^{\circ}C$. Synthesized phases and hydration heat of alinite clinker with MgO and without MgO were then investigated. As a result, alinite, CCA, ${\beta}-C_2S$ and f-CaO phases are synthesized in alinite clinker without MgO sintered at $1,300^{\circ}C$, while only alinite phase is synthesized in alinite clinker with MgO sintered at $1,300^{\circ}C$ with the highest synthesis rate. Heat evolution of alinite clinker with MgO has no induction period.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.68-72
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• 1997

In this paper, to obtain the YbB $a_2$C $u_3$ $O_{x}$ superconductor, the mixed Powders of Y $b_2$ $O_3$, BaC $O_3$, CuO and Y $b_2$BaCu $O_{5}$, BaCu $O_2$ were used and the various calcining conditions were applied for the 123 phase of YbB $a_2$C $u_3$ $O_{x}$. Samples were prepared by the mixed oxide method and calcined with various temperatures of 88$0^{\circ}C$ ~91$0^{\circ}C$ . It was observed that the distribution of YbB $a_2$C $u_3$ $O_{x}$ phase which was calcined at 90$0^{\circ}C$ for 12 hours and 99 hours. But the result of long time calcination(99 hrs), the 123 phase of YbB $a_2$C $u_3$ $O_{x}$ was existed between 89$0^{\circ}C$ and 91$0^{\circ}C$ . And the best case could be obtained at the calcination temp. of 90$0^{\circ}C$ from the mixed Powder of YbB $a_2$C $u_3$ $O_{5}$ and Bacu $O_2$ which were prepared individually.idually.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.71-78
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• 1991

The congruent composition of $LiNbO_3$ was determined by measuring Curie temperature($T_c$) of crystals and residual melt grown from the range 48.45 to 48.60mole%$Li_2O$ melts. The $T_c$ of $LiNbO_3$ varied with compositon largely. The variation of $T_c$ with composition was found to follow $T_c=l0.4184c^2-962. 996C + 23342$, where C is mole % LizO. DSC-1500 was used to measure $T_c$. Distribution coefficients for $LiNbO_3$$ LiNbO_3$ contains 48.52mole$Li_2O$ and has a measured Tc of $1145{\pm}^{\circ}C$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• Journal of the Korean Chemical Society
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• v.30 no.5
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• pp.415-422
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• 1986

The metal-support interaction of copper oxide supported on ${\gamma}$-alumina and silica was studied by X-ray diffraction (XRD) and temperature-programmed reduction(TPR). It was found that XRD pattern of CuO can not be observed up to 5.0wt % copper content for CuO/${\gamma}-Al_2O_3$ while CuO/$SiO_2$ sample shows the CuO pattern even at 2.5wt% copper content. $H_2-$TPR of CuO/${\gamma}-Al_2O_3$ system shows four major peaks at 145${\circ}C$, 185${\circ}C$, 210${\circ}C$, and 250${\circ}C$. In the case of CuO/$SiO_2$, a large peak at 250${\circ}C$ was appeared accompanying a small peak at 425${\circ}C$. Comparing the TPR peaks with that of copper aluminate which was prepared from the calcination of CuO/${\gamma}-Al_2O_3$ at 1000${\circ}C$, the peaks at around 145${\circ}C$, 200${\circ}C$ (185${\circ}C$ and 210${\circ}C$), and 250${\circ}C$ were corresponded to $Cu^+$ ion in CuO interacting ${\gamma}-Al_2O_3$, $Cu^+$ ions in defect sites of ${\gamma}-Al_2O_3$ and $Cu^{2+}$ ion in the bulk CuO layer, respectively. From the results, it was concluded that there is considerable metal-support interaction in CuO on ${\gamma}-Al_2O_3$ and the interaction results in a stabilization of $Cu^+$ ion in the system.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.543-544
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• 2006

The effect of the additives, $Y_2O_3$ and MgO, on the sintering and properties of $Al_2O_3-TiC$ composites was investigated. It is known that MgO is used as additive for improving densification and $Y_2O_3$ is applied as sintering aid. In this study, the amounts of TiC were varied in the range of 30-47 wt%. The 0.5 wt% MgO and also varied amounts of $Y_2O_3$ from 0.3 to 1 wt% were added into the composites. The sintering of $Al_2O_3-TiC$ composites was performed in a graphite-heating element furnace at different sintering temperature, 1700 and $1900\;^{\circ}C$, for 2 hr under an argon atmosphere. The results demonstrated that the properties of the composites sintered at $1700\;^{\circ}C$ were much better than those sintered at $1900\;^{\circ}C$. The comparisons on physical properties, mechanical properties and microstructure of composites with and without additives were reported. Comparing with other samples, $Al_2O_3-30wt%TiC$ composites with 0.5wt% MgO and $1\;wt%Y_2O_3$ exhibited the highest density of approximately 98% of theoretical and flexural strength of 302 MPa.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.