• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2009년도 제33회 추계학술대회논문집
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• pp.433-438
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• 2009

고체 및 액체 추진기괸에 적용하기 위하여 액체 실리콘 함침법(LSI)을 이용한 C/SiC 복합재료를 개발하였다. 연소시험을 통하여 C/SiC 복합재료의 우수한 성능을 확인하였으며 산화에 의한 삭마 모델을 제시 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.27-27
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• 2010

This paper describes the electrical and optical characteristics of $N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with $N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 한국미생물·생명공학회지
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• 제22권5호
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• pp.459-466
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• 1994

Virginiae butanolide C(VB-C) is one of the butyrolactone autoregulators, which triggers the production of virginiamycin in Streptomyces virginiae. Streptomyces longwoodensis was selected as a test strain to investigate new VB-C functions. When 100 ng/ml of the synthetic VB-C was added into the culture at 5 hour and 0 hour, the initial production time of antibiotics and a dark blue pigment were shortened by 4~6 hours and 2~4 hours, respectively. HPLC analysis revealed the production of several new antibiotics by VB-C addition. In the SDS-PAGE analysis of the total protein from mycelium several new protein bands showed up and the amounts of certain protein bands increased in the presense of VB-C. The existence of specific VB-C binding protein was confirmed from S. longwoodensis in relation to VB-C signal transduction. These results suggest that the VB-C might have an ability to induce the production of secondary metabolites in Streptomy- ces longwoodensis.

• 한국세라믹학회지
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• 제37권12호
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• pp.1165-1171
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• 2000

Ti-C-Ni 혼합분말을 이용하여 SHS 공정에 의해 TiC-Ni 복합체를 제조하였으며, 리칭(leaching) 공정을 통하여 Ni을 제거함으로써 TiC 분말을 얻었다. TiC 분말의 특성분석을 위하여 XRD, SEM, TEM, AES 등을 사용하였다. 리칭 공정에 의해 얻어진 TiC 분말은 구형을 유지하고 있으며, 평균 입자크기는 0.4$\mu\textrm{m}$였다. 구형 TiC 분말을 다시 Ni 분말과 혼합하여 소결한 후 특성을 분석하였다. 140$0^{\circ}C$에서 소결하였을 때 TiC 입자는 구형에서 각진 형태로 변화하였다. 기계적 특성결과 상용 TiC 분말을 사용하였을 때보다 SHS 공정에 의해 제조된 TiC 분말을 사용하여 소결하였을 경우 파괴 인성값이 약 20% 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1313-1314
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• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1,3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XRD and FT-IR. Residual strain was investigated by Raman scattering. The surface morphology was also observed by AFM and voids or dislocations between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.359-360
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• 2007

In this paper, the elastic modulus and hardness of poly 3C-SiC thin films growed by APCVD were measured using nanoindentation test. The resulting values of elastic modulus E and hardness H of the poly 3C-SiC film are 305 GPa and 26 GPa, respectively. The mechanical properties of the poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion resistance, high frequency, and bio MEMS applications.

• Bulletin of the Korean Chemical Society
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• 제16권11호
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• pp.1015-1019
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• 1995

The electronic structures and properties of the neutral and multiply charged C60n ions (n=2+ to 6-) with spin states have been investigated by semi-empirical MNDO calculations. In the ground state, C601- has the lowest total energy and the highest binding energy. The neutral C60 ion is supposed to have a high ionization potential and a high electron affinity. The HOMO and LUMO positions are lower in the cationic C60 than in the anionic C60. The LUMO energy becomes increasingly positive from C601- to C606- and the HOMO energy becomes increasingly negative from C602+ to C60. The HOMO-LUMO gap of the neutral C60 ion is higher than that of the multiply charged C60 ions. From the HOMO-LUMO gap, it seems reasonable to expect that electrons of the multiply charged C60 ions will be more polarizable than those of the neutral C60 ion. The HOMO and LUMO energies increase as the negative charge increases.