• 지구물리
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• 제1권1호
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• pp.59-68
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• 1998

지하 투과 레이다를 이용한, 지하 매설물의 감지 여부 및 반사 신호 특성을 규명하기 위하여 모래 모형조 실험을 수행하였다. 매설물의 직경과 매립 심도의 비율은 최대 24 %, 최소 4 %로 다양하게 설정되었으며, 매설물의 재질은 금속제, 합성수지 및 목재가 사용되었다. 실험 결과, 지하수면이 매설물 하부에 위치한 경우, 목재를 제외한 모든 매설물이 심도와 직경에 상관없이 강한 반사파를 보여 주었다. 한편, 지하수면이 매설물 상부에 위치한 경우, 지하레이다를 이용한 매설물 감지가 매우 어려웠다. 그러나 이 경우에도 모형 탱크의 바닥에서의 반사 신호는 뚜렷이 감지되었으며, 이는 단순히 전자기파의 감쇠 이외에 타 요소가 매설물의 반사파 신호 발생을 저하시키는 것으로 사료된다. 본 실험 결과, 현장에서 단순히 매설물의 수평적인 위치를 감지하려고 할 경우, 수직 반사 방식의 지하레이다 조사가 경제적, 시간적으로 효율적이지만, 매설물의 수직위치, 지층의 전자기파 투과 속도, 지하수면 조사 등, 정밀한 지하 정보 획득을 목적으로 하는 경우, 적어도 부분적인 공심점 자료를 획득 할 수 있는 방식의 조사가 수행되어야 할 것으로 사료된다.

• 한국재료학회지
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• 제8권5호
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• pp.419-423
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• 1998

매립형 InGaAnP/InP 레이저 다이오드 제작을 위한 질량 이동 현상의 최적화에 대한 연구를 수행하였다. Double heterostructure 레이저 다이오드 구조의 1차 성장은 액상 에피 성장 장치를 이용하였으며, 메사 에칭하였다. 활성층을 [110] 방향으로 선택적으로 에칭 한 후, 액상 에피 성장 장치를 이용하여 질량 이동 현상을 발생시켜 매립형 구조를 형성시켰다. 질량 이동 현상의 임계온도는 40분간 유지시켰을 때 $670^{\circ}C$로 나타났으며 재현성 있게 질량 이동 현상이 발생하였다. 질량 이동 현상에 의해 성장된 층의 폭은 온도증가에 따라 약간 증가하였다.

• 대한전자공학회논문지
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• 제13권3호
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• pp.22-27
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• 1976

집적회로(I.C)의 설계에 있어서는 평수구조의 변형만이 가능하므로 여러가지 다른 트랜지스터 (Transistor)가 결합하여 하나의 특정한 기능을 발휘하게 되는 선형회로에는 회로의 설계와 동시에 사용될 적층(EPI)의 비저항 및 두께와 적층(EPI)과 기판 사이에 삽입되는 이침층(Buried Layer)의 구조 등을 정확히 알아야 한다. 본 연구에서는 집적회로의 동작전압과 적층 두께및 비저항과의 관계를 실측치와 비교분석 하였고 이 결과를 선형 집적회로 설계에 이용 가능하도록 도시하였다. For linear IC design, one has to know the epi thickness, resistivity, and structure of buried island inserted between epi and substrate because the mask structure can only be changed for linear IC consisted of various type of transistors to be made for desired specific function. The interrelation of IC operational and saturation voltages with epi resistivity, theckness and divice structure are studied and presented in graphic forms so that IC design engineers can utilize them.

• ETRI Journal
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• 제13권4호
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• pp.2-9
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• 1991

Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.

• Archives of Plastic Surgery
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• 제36권5호
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• pp.660-662
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• 2009

Purpose: There are several modalities to reattach the amputated auricle. Microvascular replantation can achieve the best outcome, but technically difficult. Conventional composite graft is technically easy, but uniformly unsuccessful. Our successful experience of reattachment using postauricular subcutaneous pocket is presented. Methods: The amputated tissue was placed in its anatomical position with buried sutures. The amputated part is dermabraded to remove the epidermis and outer layer of dermis(Fig. 1, Center, left). Postauricular skin flap was then raised and the reattached dermabraded ear was buried beneath the flap(Fig. 1, Center, right). Two weeks after the original surgery, the buried ear was removed from its pocket (Fig. 1, Below, left). Results: The ear was reepithelialized spontaneously in 7 days. At 3 months, the reattached ear has satisfactory appearance without contour deformity(Fig. 1, Below, right). Conclusion: This technique provides increase in contact surface between the amputated segment and the surrounding tissues which supply blood, serum, oxygen and nutrients, maximizing the probability of "take". Minimally injured dermis can be healed from spontaneous reepithelialization and provides minimal contour deformity. We have used this non-microsurgical technique with very satisfying outcome.

• Geomechanics and Engineering
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• 제36권2호
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• pp.131-143
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• 2024

Shield tunneling construction commonly crosses underground pipelines in urban areas, resulting in soil loss and followed deformation of grounds and pipelines nearby, which may threaten the safe operation of shield tunneling. This paper investigated the pipeline deformation caused by double curved shield tunnels in soil-rock composite stratum in Nanjing, China. The stratum settlement equation was modified to consider the double shield tunneling. Moreover, a three dimensional finite element model was established to explore the effects of hard-layer ratio, tunnel curvature radius, pipeline buried depth and other influencing factors. The results indicate the subsequent shield tunnel would cause secondary disturbance to the soil around the preceding tunnel, resulting in increased pipeline and ground surface settlement above the preceding tunnel. The settlement and stress of the pipeline increased gradually as buried depth of the pipeline increased or the hard-layer ratio (the ratio of hard-rock layer thickness to shield tunnel diameter within the range of the tunnel face) decreased. The modified settlement calculation equation was consistent with the measured data, which can be applied to the settlement calculation of ground surface and pipeline settlement. The modified coefficients a and b ranged from 0.45 to 0.95 and 0.90 to 1.25, respectively. Moreover, the hard-layer ratio had the most significant influence on the pipeline settlement, but the tunnel curvature radius and the included angle between pipeline and tunnel axis played a dominant role in the scope of the pipeline settlement deformation.

• 한국광학회지
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• 제14권6호
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• pp.669-673
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• 2003

본 연구에서는 기존의 ridge waveguide laser diode(RWG LD)보다 ridge폭에 따른 측방향 단일모드 특성이 우수하고 planar 화에 유리하며 측방향의 유효 굴절률차를 ridge 구조에 추가로 성장된 InGaAsP층의 두께로 조절이 가능한 Buried RWG LD를제작하였다. 본 연구에서는 Buried RWG LD를 CBE장치로 InGaAs/InGaAsP multiple quantum well(MQW) 에피 웨이퍼를 성장하고, LPE로 재성장하여 B-RWG LD를 제작하였다. 또한 ridge 폭을 5 $\mu\textrm{m}$와 7 $\mu\textrm{m}$로 하여 B-RWG LD를 제작하고 특성을 비교하여 보았다. 제작된 7 $\mu\textrm{m}$ B-RWG LD에서 광출력이 20㎽에 이를 때까지 고차모드 발진에 의한 kink현상이 일어나지 않았으며, 포화 광출력이 80 ㎽ 이상임을 확인하였다. 제작된 B-RWG LD가 측방향 단일모드로 동작함을 확인하기 위해 FFP을 측정한 결과, ridge 폭이 5 $\mu\textrm{m}$일 때는 2.7I$_{th}$ , ridge 폭이 7 $\mu\textrm{m}$일 때는 2.4I$_{th}$ 까지 단일모드로 동작함을 확인할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.21-22
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• 2005

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

• 한국지형학회지
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• 제23권1호
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• pp.17-33
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• 2016

Samples from newly exposed outcrop of sedimentary layers forming Jeongdongjin coastal terrace in Gangreung area are collected and analyzed to find the sedimentary environment. The site are located at the gentle hillslope of the terrace surface area. The height of the outcrop is about 8m and the altitude of it's highest part is 68~73m MSL. The lowest part of this out crop is the partly consolidated sand layer with gravel veneer within it. It is found that this part is not in-situ weathered sand stone through the OSL method. This sand layer is overlain by the gravel layer with sand matrix. The shapes of the gravels from this part are mainly 'platy', 'elongated', and 'bladed' by the index of Sneed and Folk(1958). In addition, mean roundness is not so high. It is sceptical to regard this part as marine sediments which are continuously exposed to erosional processes. The boundary between the lowest sand layer and gravel layer showing the abrupt change in forming material without any mixture or transitional zone, so gravels are seemed to deposited after some degree of consolidation of the lowest sand layer. In addition, the hight of the boundary between layers are changed by the place, so the surface of the partly consolidated sand layer is not flat and has irregularity on topography when it buried by gravels. Main part of this out crop is the poorly sorted coarse gravel(22.4mm) with sand matrix($1.36{\phi}$) layer with at least 2m thick covering the relatively fine gravels discussed above. Over 20% of particles have 'very platy', 'very elongated' and 'very bladed' shape and only less than 5% of particles have 'compact' shape, So this particles are also very hard to be regard as marine gravels which are abraded by marine processes. It can be concluded that this gravel layer formed by fluvial processes rather than coastal processes base on the form of the clast and sedimentary structure. The gravel layer is covered by fine($3{\sim}4{\phi}$) material layers of psudo-gleization which showing inter-bedding of red and white layers. Chemical composition of matrix and other fine materials should be analyzed in further studies. It is attempted to fine the burial ages of the sediment using OSL method, but failed by the saturation. So it can be assumed that these sediments have be buried over 120ka.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1034-1040
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.