• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.48-54
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• 1999

We designed the optimal device parameters of the retrograde well and the gettering layer(buried layer) using the high energy ion implantation for the next generation of CMOS struoture and proposed two models and simulated these models with Athena and Atlas, Silvaco Co. We obtained trigger currents which is more than 600 ${\mu}A/{\mu}m$ when the structure has been combined the gettering layer and the retrograde well. And the second model(twin retrograde well) was obtained that holdingcurrents were over 2500${\mu}A/{\mu}m$. As results, the more heavier dose, the more improved the latch-up immunity. The n'-p' spacing was fixed a 2${\mu}m$ in both models.

• Publications of The Korean Astronomical Society
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• v.27 no.4
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• pp.291-292
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• 2012

We select infrared-luminous galaxies by cross-matching the SDSS spectroscopic sample of galaxies with the WISE all-sky survey catalog. Based on photometric data points covering from SDSS u-band to WISE $22{\mu}m$, their spectral energy distributions (SEDs) are separated into AGN, elliptical, spiral, and irregular galaxy components. The derived luminosities of spiral galaxy and AGN are well correlated with $H{\alpha}$ and [OIII] line luminosities, respectively. Most galaxies are dominated by young stellar populations even for optical AGNs, but at least 10% of optical non-AGNs appear to harbor buried AGNs. The AGN contribution increases dramatically with the total luminosity. These results show that the SED decomposition is successful and is useful to understand the true nature of dusty galaxies.

• Journal of the Korea Furniture Society
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• v.19 no.3
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• pp.219-228
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• 2008

Kangrung is a royal tomb for King Myoungjong and his wife, Queen Jeongsun. According the record, Myoungjong died on 1567 and was buried in the present location at Gongrungdong, Nowonku, Seoul. During the 2006 repair for the Jeongjagak (memorial hall) and Bigak (tombs' house) of Kangrung, a dendrochronological analysis had been conducted. We took 79 samples, 74 from Jeongjagak and 5 from Bigak, respectively, for dating. There were three major cutting groups, i.e., 1692-1694, 1737, and 1859-1861. The first group was well matched with the date of reconstruction, which was written on the 'Sangryangmun', a formal record about building activities. The tree-ring results confirmed that the present buildings of Jeongjagak and Bigak in Kangrung were reconstructed in 1695. The second and third cutting groups indicated major repairs in Bigak.

• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.458-460
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• 2000

In this paper, we analyze the inductive coupling between overhead power transmission lines and neighbouring gas pipelines or other conductors, when they parallel to a line section in a phase-to-earth fault is assumed on the transmission line. A numerical procedure employing the finite-element method(FEM) is used in conjunction with Faraday's law, in order to predict the current in a faulted transmission line as well as the induced voltages across points on a pipeline running parallel to the faulted line and remote earth. The results lead to conclusion that may be useful to power system engineers.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.6
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• pp.1-10
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• 1979

Recent progresses in the signal processing technique in digital domain as well as that of analogue, impose a heavy burden on scientists and engineers intending to study this dis cipline, we surveyed basic tools for these vast branches to help those who have concerns on this field without being buried in detailed techniques. The first article is naturally confined to the basic tools namely random process analysis and characterization of random signal by covariance function.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1890-1892
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• 2001

This paper described on the fabrication of microstructures by DRIE(Deep Reactive Ion Etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -750 mm Hg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(1000$^{\circ}C$, 60 min.), the SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as a accurate thickness control and a good flatness.

• ALGAE
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• v.22 no.3
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• pp.159-165
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• 2007

Morphological and anatomical characters of Amphiroa rigida Lamouroux were investigated with field materials and taxonomic accounts are given to the species. The species grows in the subtidal zone of Cheju island, and is characterized by semiendophytic habit in Hydrolithon onkodes. The species is well defined by about 1 cm height, loosely tufted thallus with irregular branches, two-tiered geniculum with equal length, geniculum tier connecting by oblique end walls, and conceptacles buried in cortices of intergeniculum. Korean isolates have etrasporangial, male and female conceptacles. The structure and developmental patterns of conceptacles are very similar to those shown in previous studies.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.946-949
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• 1999

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.476-480
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.

• Water for future
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• v.23 no.2
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• pp.239-250
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• 1990

The method for artificial grondwater recharge can be categorized into two groups, one is well method and the other one is scattering method. Underground piping method belongs to the latter group and it is to infiltrate water from porous pipes buried underground. This paper shows the result of indoor experiment and numerical analysis concerning this method. The purpose of the study is to maky the infiltration aspects and groundwater recharge in underground piping method. We have found that the recharge height is effect by the difference of water level and a distance of pipe laying.