• Transactions on Electrical and Electronic Materials
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• 제13권6호
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.

• 센서학회지
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• 제13권1호
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• pp.35-40
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• 2004

A thin-film multijunction thermal converter was fabricated through the process using 6 inch silicon wafer semiconductor process and bulk micromachining. Evanohm R alloy and chromel-constantan were used as a heater and thermocouple materials, respectively. The temperature coefficient of resistance of Evanohm R heater was about 75.12 ppm/$^{\circ}C$ and the voltage sensitivity of the thermal converter indicated about 5.75 mV/mW in air. The transfer differences, measured by FRDC-DC method in the frequency range from 20 Hz to 10 kHz, showed the value under about 1.36 ppm, 0.83 ppm for the film thickness of 500, 200 nm, respectively. And in case of a 200 nm-thick thermal converter, the AC-DC transfer differences seems to be stabilized below the value of 1 ppm in the frequency range from 1 kHz to 500 kHz.

• 센서학회지
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• 제28권2호
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• pp.127-132
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• 2019

In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (< $400^{\circ}C$) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.

• 센서학회지
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• 제10권5호
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• pp.304-313
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• 2001

본 연구에서는 $NH_4OH-H_2O_2-H_2O$ 식각액을 이용하여 GaAs의 식각 특성을 파악하였으며, (001) GaAs 기판을 이용한 사각형 단면을 가지는 GaAs 미세구조물의 제작방법을 개발하였다. 먼저 결정방향별 습식식각 특성을 파악하기 위해 16가지 조성에 대한 $NH_4OH-H_2O_2-H_2O$ 식각액의 식각률 및 식각 단면 형상과 5가지 조성에 대한 언더컷률에 관한 자료를 구하였다. 본 실험을 통해 얻어진 데이터를 이용하여 새로운 GaAs 마이크로머시닝 방법을 제시하고, 이를 이용하여 사각형 단면을 가지는 브리지 형태의 부유된 구조물을 제작하였다. 개발된 빔 부유 공정은 RF 구성요소인 저 손실 및 고가변 정전용량기 제작에 유용하며, 또한 광송수신부와 미러 집적화에도 적용가능성을 지닌다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2004년도 ICCAS
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• pp.1706-1710
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• 2004

This paper presents a feedback-controlled, MEMS-fabricated microaccelerometer (${\mu}$XL). The ${\mu}$XL has received much commercial attraction, but its performance is generally limited. To improve the open-loop performance, a feedback controller is designed and experimentally evaluated. The feedback controller is applied to the x/y-axis ${\mu}$XL fabricated by sacrificial bulk micromachining (SBM) process. Even though the resolution of the closed-loop system is slightly worse than open-loop system, the bandwidth, linearity, and bias stability are significantly improved. The noise equivalent resolution of open-loop system is 0.615 mg and that of closed-loop system is 0.864 mg. The bandwidths of open-loop and closed-loop system are over 100 Hz. The input range, non-linearity and bias stability are improved from ${\pm}$10 g to ${\pm}$18 g, from 11.1 %FSO to 0.86 %FSO, and from 0.221 mg to 0.128 mg by feedback control, respectively

• 센서학회지
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• 제14권1호
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• pp.22-27
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• 2005

A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities $(({\partial}({\Delta}V)/{\partial}(\dot{q}));{\;}{\Delta}V$ : voltage difference, $\dot{q}$ : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.

• 센서학회지
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• 제9권3호
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• pp.196-202
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• 2000

본 논문에서는 3축의 가속도를 검출하기 위한 새로운 방식인 브리지조합 검출원리를 제안하고, SOI 구조의 웨이퍼를 이용하여 $200^{\circ}C$ 이상 고온에서 동작이 가능한 압저항형 실리콘 가속도센서를 제작하였다. 제작된 센서의 감도는 x 및 y축이 8mV/V G, z 축이 40mV/V G 이였다. 그리고 출력전압의 비선형성은 1.6%FS, 타축감도는 약 4.6% 이하였다. 이것은 외부 연산회로를 이용하여 3축의 가속도성분을 검출하는 방법에 비해 검출방식은 간단하면서도, 특성은 거의 동일하였다. 또한 SOI 구조를 이용하여 고온에서도 안정한 동작을 하였다. 제작된 가속도센서의 오프셋전압 온도계수와 감도 온도계수는 $27^{\circ}C$에서 각각 $1033ppm^{\circ}C^{-1}$와 $1145ppm^{\circ}C^{-1}$이였다.

• 대한기계학회논문집A
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• 제26권3호
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.259-267
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• 2002

We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use $20-\mu\textrm{m}$-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices, $10-\mu\textrm{m}-thick$ gold absorber on $1mm{\times}1mm$ Si shuttle mass is supported by $10-\mu\textrm{m}-wide$, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and $20\mu\textrm{m}$, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around $20{\;}\mu\textrm{m}$at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.

• 센서학회지
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• 제13권2호
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• pp.101-109
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• 2004

This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the extended sacrificial bulk micromachining (extended SBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one mask. The fabricated accelerometer has the structure thickness of $30{\mu}m$, the vertical offset of $12{\mu}m$, and lateral gap between electrodes of $4{\mu}m$. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signal-to-noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be $500{\mu}g$ and $748{\mu}g$. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18% FSO, respectively.