• 한국연소학회:학술대회논문집
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• 한국연소학회 2004년도 제29회 KOSCI SYMPOSIUM 논문집
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• pp.197-205
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• 2004

Most of gas turbines is operated by the type of dry premixed combustion to reduce NOx emission and economize fuel consumption. However this type operation, combustion induced instability brought failure problems cause by high pressure and heat release fluctuations. Though there has been lots of studies since Lord Rayleigh to understand this instability mechanism and control the instabilities, none of them made matters clear. In order to understand the instability phenomena, a simple experimental study with dump combustor was conducted at the moderate pressure and ambient temperature conditions. From this model gas turbine combustor self-excited instabilities at the resonance mode(200Hz) and bulk mode(10Hz) were occurred and observed at the three points of view; pressure, heat release and equivalence ratio which are acquired by peizo-electric transducer, HICCD camera and acetone LIF respectively. From this results we could see the instability mechanism clear with the account of time scale analysis which explained by the propagation of pressure wave to the upward of mixture stream and convectional transfer of the equivalence ratio fluctuation by this pressure fluctuation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.390-390
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• 2010

Superconducting proximity effects of Nb/Si(111) were investigated with scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). A highly-doped($0.002\;{\omega}{\diamondsuit}cm$) Si wafer pieces were used as substrate and Nb source was thermally evaporated onto the atomically clean silicon substrate. The temperature of the silicon sample was held at $600^{\circ}C$ during the niobium deposition. And the sample was annealed at $600^{\circ}C$ for 30 minutes additionally. Volmer-Weber growth mode is preferred in Nb/Si(111) at the sample temperature of $600^{\circ}C$. With proper temperature and annealing time, we can obtain Nb islands of lateral size larger than Nb coherence length(~38nm). And outside of the islands, bare Si($7{\times}7$) reconstructed surface is exposed due to the Volmer-Weber Growth mode. STS measurement at 5.6K showed that Nb island have BCS-like superconducting gap of about 2mV around the Fermi level and the critical temperature is calculated to be as low as 6.1K, which is lower than that of bulk niobium, 9.5K. This reduced value of superconducting energy gap indicates suppression of superconductivity in nanostructures. Moreover, the superconducting state is extended out of the Nb island, over to bare Si surface, due to the superconducting proximity effect. Spatially-resolved scanning tunneling spectroscopy(SR-STS) data taken over the inside and outside of the niobium island shows gradually reduced superconducting gap.

• Journal of Information Processing Systems
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• 제10권2호
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• pp.176-192
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• 2014

The realization of Wireless Multimedia Sensor Networks (WMSNs) has been fostered by the availability of low cost and low power CMOS devices. However, the transmission of bulk video data requires adequate bandwidth, which cannot be promised by single path communication on an intrinsically low resourced sensor network. Moreover, the distortion or artifacts in the video data and the adherence to delay threshold adds to the challenge. In this paper, we propose a two stage Quality of Service (QoS) guaranteeing scheme called Prioritized Multipath WMSN (PMW) for transmitting H.264 encoded video. Multipath selection based on QoS metrics is done in the first stage, while the second stage further prioritizes the paths for sending H.264 encoded video frames on the best available path. PMW uses two composite metrics that are comprised of hop-count, path energy, BER, and end-to-end delay. A color-coded assisted network maintenance and failure recovery scheme has also been proposed using (a) smart greedy mode, (b) walking back mode, and (c) path switchover. Moreover, feedback controlled adaptive video encoding can smartly tune the encoding parameters based on the perceived video quality. Computer simulation using OPNET validates that the proposed scheme significantly outperforms the conventional approaches on human eye perception and delay.

• 한국산업보건학회지
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• 제7권2호
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• pp.196-208
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• 1997

This study was performed to estimate quartz contents in the both bulk and airborne dust samples and to determine particle size distribution of airborne dust from the selected foundry operations. Total dust samples were collected by a 37mm cassette and respirable by a 10 mm nylon cyclone. Particle size distributions were determined by a Marple's 8-stage cascade impactor at the melting, molding, shakeout and finishing operations. The presence of elements in the dust samples were confirmed by the scanning electron microscopy equipped with the energy dispersive x-ray spectrometry. The quartz contents were estimated using the intensity of the absorption peak of quartz at 799 cm-l by the Fourie Transformed Infrared Spectroscopy (FTIR). The results were as follows: 1. The analysis of data from cascade Impactor showed bimodal distributions of particle size at the melting, molding and shakeout operations. Mass median aerodynamic diameters for the distributions determined by histogram were $0.48-1.65{\mu}m$ for small and $13.43-19.58{\mu}m$ for large modes. In the dust samples collected at the finishing operations, however, only a large mode of $18.89{\mu}m$ was found. 2. The percentages of total to respirable dust concentration calculated from the impactor data ranged from 42 % to 66 %. The average concentrations of respirable dust by cyclone were $0.85-1.28mg/m^3$ collected from the workers, and were $0.23-0.56mg/m^3$ from the areas surveyed. Dust concentrations of personal samples were statistically significantly higher than those of area samples. The highest dust concentration was obtained from the personal samples of the finishing operation. 3. The mean percentages of silicon and oxygen estimated by SEM-EDXA in the bulk samples ranged from 35.83 % to 36.02 % and from 39.93 %-41.64 %, respectively. 4. The average quartz contents estimated by FTIR in the respirable dust from personal samples ranged from 4.32 % to 5.36 % and 4.54 % to 4.70 % in the bulk samples. No statistical difference of quartz content was found between foundry operations. In this study, quartz content was quantified by FTIR. Although no statistically significant difference in quartz content between airborne and bulk, samples and between different foundry operations was found, it is recommended that quartz content in the individual sample of respirable dust be analyzed and the results be used either to select an applicable quartz limits or to calculate the exposure limit. Further studies, however, are needed to compare the results by FTIR and XRD since it is reported that the quartz content determined by FTIR is different from that by XRD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.311-311
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• 2016

최근 고성능 디스플레이 개발이 요구되면서 기존 비정질 실리콘(a-Si)을 대체할 산화물 반도체에 대한 연구 관심이 급증하고 있다. 여러 종류의 산화물 반도체 중 a-IGZO (amorphous indium-gallium-zinc oxide)가 높은 전계효과 이동도, 저온 공정, 넓은 밴드갭으로 인한 투명성 등의 장점을 가지며 가장 연구가 활발하게 보고되고 있다. 기존에는 SG(단일 게이트) TFT가 주로 제작 되었지만 본 연구에서는 DG(이중 게이트) 구조를 적용하여 고성능의 a-IGZO 기반 박막 트랜지스터(TFT)를 구현하였다. SG mode에서는 하나의 게이트가 채널 전체 영역을 제어하지만, double gate mode에서는 상, 하부 두 개의 게이트가 동시에 채널 영역을 제어하기 때문에 채널층의 형성이 빠르게 이루어지고, 이는 TFT 스위칭 속도를 향상시킨다. 또한, 상호 모듈레이션 효과로 인해 S.S(subthreshold swing)값이 낮아질 뿐만 아니라, 상(TG), 하부 게이트(BG) 절연막의 계면 산란 현상이 줄어들기 때문에 이동도가 향상되고 누설전류 감소 및 안정성이 향상되는 효과를 얻을 수 있다. Dual gate mode로 동작을 시키면, TG(BG)에는 일정한 positive(or negative)전압을 인가하면서 BG(TG)에 전압을 가해주게 된다. 이 때, 소자의 채널층은 depletion(or enhancement) mode로 동작하여 다른 전기적인 특성에는 영향을 미치지 않으면서 문턱 전압을 쉽게 조절 할 수 있는 장점도 있다. 제작된 소자는 p-type bulk silicon 위에 thermal SiO2 산화막이 100 nm 형성된 기판을 사용하였다. 표준 RCA 클리닝을 진행한 후 BG 형성을 위해 150 nm 두께의 ITO를 증착하고, BG 절연막으로 두께의 SiO2를 300 nm 증착하였다. 이 후, 채널층 형성을 위하여 50 nm 두께의 a-IGZO를 증착하였고, 소스/드레인(S/D) 전극은 BG와 동일한 조건으로 ITO 100 nm를 증착하였다. TG 절연막은 BG 절연막과 동일한 조건에서 SiO2를 50 nm 증착하였다. TG는 S/D 증착 조건과 동일한 조건에서, 150 nm 두께로 증착 하였다. 전극 물질과, 절연막 물질은 모두 RF magnetron sputter를 이용하여 증착되었고, 또한 모든 patterning 과정은 표준 photolithography, wet etching, lift-off 공정을 통하여 이루어졌다. 후속 열처리 공정으로 퍼니스에서 질소 가스 분위기, $300^{\circ}C$ 온도에서 30 분 동안 진행하였다. 결과적으로 $9.06cm2/V{\cdot}s$, 255.7 mV/dec, $1.8{\times}106$의 전계효과 이동도, S.S, on-off ratio값을 갖는 SG와 비교하여 double gate mode에서는 $51.3cm2/V{\cdot}s$, 110.7 mV/dec, $3.2{\times}108$의 값을 나타내며 훌륭한 전기적 특성을 보였고, dual gate mode에서는 약 5.22의 coupling ratio를 나타내었다. 따라서 산화물 반도체 a-IGZO TFT의 이중게이트 구조는 우수한 전기적 특성을 나타내며 차세대 디스플레이 시장에서 훌륭한 역할을 할 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• 대한전자공학회논문지
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• 제19권6호
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• pp.17-32
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• 1982

집적광학용 광도파전에 전기팡 효파 혹은 자기광 효과를 나타내는 이방성 매질을 사용할 때 매질정수 및 박막두께등 광학적 변수가 모드 변환에 미치는 영향괼 엄밀한 파동광학의 접근 방법으로 조사하여 어떠한 박막형 광도파관 구조에도 적용될 수 있는 일반적인 해석방법을 제시하였다. 균일한 이방성 매질에서의 고유 모드와 그 구성성분 및 위상속도를 먼저 결정하고 그 결과를 이용하여 박자형 광도파관에서의 고유 모드 성분에 대한 위상특성식을 구하였고 전자파의 진행방향에 대한 모드 성분의 변화를 Jones 행열 령태로 표시하여 박막형 광도파관에서 모드 젼환의 조건과 그 변환율이 Bulk 매질에서와는 다름을 나타내었다. Wave propagation in gyrotropic or anisotropic medium is analyzed in terms of the eigenmodes of the medium, which are admixture of TE and TM waves. The field composition and the phase velocity of the modes are also determined. The results of the analysis are applied to thin film optical waveguide using such medium as substrate and/or film. Based on the characteristic equations for phase constants of the waveguide, the condition for TE-TM mode convection is derived, and wave propagation in the guide is represented in the form of Jones matrix, which allows a new interpretation in the conversion efficiency of the thin-film optical waveguides.

• 대한기계학회논문집A
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• 제40권11호
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• pp.919-925
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• 2016

본 연구에서는 비선형 체적파 혼합 기법의 선행연구를 토대로 램파 기법에 적용하여 램파 혼합 기법에 대한 연구를 수행하였다. 램파 혼합 기법의 타당성을 증명하기 위해 결함이 없는 시편과 부식에 의해 발생된 표면 결함이 있는 시편에 대해 실험을 진행하였다. 실험 대조군으로는 램파의 지배적인 면내변위와 면외변위를 가지는 모드 및 주파수로 선정하였다. 그 결과 램파 혼합 기법으로도 결함 검출이 가능하였고, 기존의 램파 기법의 경향성과 유사하게 나타났다. 그리고 이론과 동일한 지배적인 변위와 모드가 발생된 것을 확인 할 수 있었다. 그러나 결함 검출 성능은 측정 방법 및 단순 모드 선정에 따라 결정되는 것이 아니라 변위 비율에 따라 결정된다.

• Journal of Biosystems Engineering
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• 제36권1호
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• pp.23-32
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• 2011

In this work, the finite element method was used to investigate the shifts of resonance frequencies and quality factor of whispering-gallery-mode (WGM) for an opto-fluidic ring resonator (OFRR) biosensor. To describe the near-field radiation transfer, the time-domain Maxwell's equations were employed and solved by using the in-plane TE wave application mode of the COMSOL Multiphysics with RF module. The OFRR biosensor model under current study includes a glass capillary with a diameter of 100 mm and wall thickness of 3.0 mm. The resonance energy spectrum curves in the wavelength range from 1545 nm to 1560 nm were examined under different biosensing conditions. We mainly studied the sensitivity of resonance shifts affected by changes in the effective thickness of the sensor resonator ring with a 3.0 mm thick wall, as well as changes in the refractive index (RI) of the medium inside ring resonators with both 2.5 mm and 3.0 mm thick walls. In the bulk RI detection, a sensitivity of 23.1 nm/refractive index units (RIU) is achieved for a 2.5 mm thick ring. In small molecule detection, a sensitivity of 26.4 pm/nm is achieved with a maximum Q-factor of $6.3{\times}10^3$. These results compare favorably with those obtained by other researchers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.156-157
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• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.