• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.96-96
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• 2016

나노섬유(nanofiber), 나노선(nanowire), 그리고 나노튜브(nanotube)와 같은 1차원 구조의(one-dimensional structure) 나노재료는 벌크(bulk) 및 박막(film) 재료와는 다르게 물리적, 화학적으로 특이한 성질을 가지고 있으며, 이러한 성질은 나노재료의 구조, 형상, 크기 등에 큰 영향을 받는다. 첫 째, 전기방사(electrospinning) 공정을 이용한 나노섬유의 합성; 용액의 특성, 전기장 세기, 방사시간 등의 변수를 조절하게 되면 방출되는 재료의 형상을 입자 혹은 섬유상의 형태로 얻을 수 있으며, 전기방사를 통해 합성된 나노재료의 소결 온도 및 시간을 달리함으로써 나노입자의 크기를 조절할 수 있다. 또한, 템플레이트 합성법(template synthesis) 및 이중노즐(coaxial nozzle)을 이용해 속이 빈 형태인 중공(hollow) 구조의 나노섬유를 얻을 수 있으며, 전기방사에 사용되는 전구물질에 원하는 금속 및 산화물을 첨가함으로써 복합체(composite) 나노섬유를 얻을 수 있다. 둘 째, VLS(Vapor-Liquid-Solid) 공정을 이용한 나노선의 성장; 온도, 압력, 전구물질의 양, 그리고 시간 등의 변수를 조절하게 되면 원하는 직경 및 길이를 갖는 나노선을 성장시킬 수 있다. 그리고 ALD(Atomic Layer Deposition)를 이용해 나노선에 추가적인 층을 형성함으로써 코어-셀 구조를 형성할 수 있으며, 감마선, UV와 같은 공정을 이용해 귀금속 촉매를 나노선에 기능화 시킬 수도 있다. 코어-셀 구조를 갖는 나노선/나노섬유는 코어 혹은 셀 층의 전자나 홀의 이동을 유발하여 전자공핍층(electron depletion layer) 또는 정공축적층(hole accumulation layer)을 확대 및 축소시켜 센서의 초기저항을 증가시키거나 감소시키는 역할로써 이용되고 있으며, 특히, 셀 층의 두께가 셀 층 재료의 Debye length와 유사한 크기를 갖게 되면, 셀 층은 완전공핍층(fully depleted layer)을 형성해 최대의 감도를 나타낼 수 있다. 본 연구에서는 다양한 제조 공정을 통해 제작될 수 있는 1차원 나노-구조물을 가스센서에 적용하는 사례들을 소개하고, 이러한 가스센서의 감응성능을 향상시키기 위한 방법의 한 가지로 원자층증착법으로 나노선/나노섬유의 표면에 셀층을 형성하여 감응성 향상 메커니즘 및 관련 주요 변수들을 조사하고자 한다.

• 대한금속재료학회지
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• 제48권7호
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• pp.625-629
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• 2010

This study investigates the effects of porosity on the thermal stability and the thermal shock resistance of a porous nozzle used for blowing an inert gas. The samples of $Al_2O_3-SiO_2-ZrO_2$ system, which had the apparent porosity of 16~30% and bulk density of $2.6{\sim}3.2g/cm^3$, were prepared by adding different graphite contents (5, 10, 20 wt%) as a pore-forming agent. The thermal shock test was conducted at ${\Delta}T=500$, 1000, and $1400^{\circ}C$ also and the thermal stability was also carried out at 1550, 1600, and $1650^{\circ}C$ for 5 hrs. The specimen contained 10 wt% graphite had uniform pore size distribution, whereas the specimen with 20 wt% graphite showed non-uniform pore size distribution. As a result of thermal shock test, the specimen containing 10 wt% graphite appears to have higher mechanical strength than the other specimens (5, 20 wt% graphite). Both the 5 wt% and 20 wt% graphite specimens developed a non-uniform pore size distribution and cracks that were generated by intensive thermal stress.

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.92-96
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• 2024

The application of the technology for forming Al₂O₃ thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al₂O₃ thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• 한국결정성장학회지
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• 제21권2호
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• pp.92-97
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• 2011

화력발전소에서 발생하는 석탄회의 일종인 저회는 현재 적절한 재활용 방법이 연구 되지 않아 대부분 매립에 의존하고 있는 실정이다. 본 연구에서는 비가소성 분체인 저회의 재활용율을 높이며, 저회를 점토 대체 원료로 재활용하기 위하여 저회와 점토의 계면화학적 성질을 조절하여 Bottom-ash(B/A)-Hard Clay(H/C) 소지의 물성변화를 관찰하였다. H/C 100 %, H/C60 % + B/A40 %에 대하여 각 조성별 pH에 따른 침강높이를 관찰한 결과 점토와 저회는 계면 화학적 성질이 비슷하여 혼합하여 슬립제조 시 hetero-polar 응집현상이 없었다. 또한 각 조성별 점도가 조절된 Slip을 주입 성형하여 $1100{\sim}1250^{\circ}C$에서 $50^{\circ}C$ 간격으로 소결하여 각 시편에 대한 비중, 흡수율을 측정하고 미세구조를 관찰하였다. 그 결과 분산된 점토와 저회 슬립은 Bingham 가소성 거동을 보이므로 주입성형 및 가소성형이 가능하며, 분산된 점토와 저회 슬립으로부터제조된 소결체는 $1250^{\circ}C$에서 KSL 4201과 KSL 1001의 규격을 만족할 뿐 아니라 특히 비중이 약 15 % 이상 경량이므로 도자기나 위생도기 등의 소지로 응용 가능성이 있다고 사료된다.

• Applied Biological Chemistry
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• 제27권1호
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• pp.21-28
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• 1984

호주산(産) 밀 6종류(種類)에 대(對)한 제분특성(製粉特性)을 $B{\ddot{u}}hler$ test mill로 조사(調査)하고 우리나라 재래종(在來種) 수원 219호와 비교(比較)하였다. 또한 이들로부터 얻어진 밀가루(patent flour)에 대한 반죽형성능력 및 전분(澱粉)호화성질을 Farinograph, Mixograph, Amylograph, 침강시험(沈降試驗) 및 Pelshenke 시험(試驗)등을 통하여 조사(調査)하였다. 호주산(産) 밀의 제분율(製粉率)은 $59{\sim}66%$ 범위(範圍)에 속하였다. 제분율(製粉率)은 천립중(千粒重)과 밀접(密接)한 관계(關係)를 나타내었으며 liter 중(重)과는 유의적 상관관계(相關關係)를 나타내지 않았다. 이들 밀로부터 얻어진 밀가루의 단백질 함량(含量)은 밀의 종류(種類)에 따라 14.47%에서부터 6.59%로 크게 상이(相異)하였으며 반죽의 물성(物性)도 밀의 종류(種類)에 따라 큰 차이(差異)를 보였다. Australian Prime Hard와 Australian Hard는 강력한 gluten 형성능력을 가진 반면 Australian Standard White와 Australian Soft Wheat는 매우 약(弱)한 gluten 형성능력(形成能力)을 보였다. 한편 Australian Standard White와 Western Australian Wheat는 대단히 높은 호화점도를 가지는 반면 South Australian Wheat는 이례적으로 낮은 호화점도를 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1999년도 춘계학술대회 및 발표대회 강연 및 발표논문 초록집
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• pp.5-5
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• 1999

The Principal deficiency of the existing notion about the sintering-mixtures consists in the fact that almost no attention is focused on the Phenomenon of alloy formation during sintering, its connection with dimensional changes of powder bodies, and no correct ideas on the driving force for the sintering process in the stage of establishing chemical equilibrium in a system are available as well. Another disadvantage of the classical sintering theory is an erroneous conception on the dissolution mechanism of solid in liquid. The two-particle model widely used in the literature to describe the sintering phenomenon in solid state disregards the nature of the neighbouring surrounding particles, the presence of pores between them, and the rise of so called arch effect. In this presentation, new basic scientific principles of the driving forces for the sintering process of a two-component powder body, of a diffusion mechanism of the interaction between solid and liquid phases, of stresses and deformation arising in the diffusion zone have been developed. The major driving force for sintering the mixture from components capable of forming solid solutions and intermetallic compounds is attributed to the alloy formation rather than the reduction of the free surface area until the chemical equilibrium is achieved in a system. The lecture considers a multiparticle model of the mixed powder-body and the nature of its volume changes during solid-state and liquid-phase sintering. It explains the discovered S-and V-type concentration dependencies of the change in the compact volume during solid-state sintering. It is supposed in the literature that the dissolution of solid in liquid is realised due to the removal of atoms from the surface of the solid phase into the melt and then their diffusicn transfer from the solid-liquid interface into the bulk of liquid. It has been shown in our experimental studies that the mechanism of the interaction between two components, one of them being liquid, consist in diffusion of the solvent atoms from the liquid into the solid phase until the concentration of solid solutions or an intermetallic compound in the surface layer enables them to pass into the liquid by means of melting. The lecture discusses peculimities of liquid phase formation in systems with intermediate compounds and the role of the liquid phase in bringing about the exothermic effect. At the frist stage of liquid phase sintering the diffusion of atoms from the melt into the solid causes the powder body to grow. At the second stage the diminution of particles in size as a result of their dissolution in the liquid draws their centres closer to each other and makes the compact to shrink Analytical equations were derived to describe quantitatively the porosity and volume changes of compacts as a result of alloy formation during liquid phase sinteIing. Selection criteria for an additive, its concentration and the temperature regime of sintering to control the density the structure of sintered alloys are given.

• 한국인구학
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• 제16권2호
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• pp.125-139
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• 1993

Korea has successfully achieved a lowered fertility level owing to the strong population control policy and effective family planning program. Along with fertility decline and decreased number of children in family, average number of household members has decreased and nontraditional households such as one person household and households composed of unrelated individuals have prolifirated, even though the absolute number of them are found minimal in Korea. However in recent years several data and survey results suggest that one person households are gradually in the increasing trend. The study aimed at investigating the real state of one person households in Korea and next analyzing the proportional distribution of one person households by a few socioeconomic characteristics, thus providing basic for eatablishing far-singhted population and social welfare policy in the future. Korea has experienced high growth rate of economy through government-led development plans starting from the 1960s. During the past three decades, Korea has shifted from the agricultural state to the industrialized one. In compliance with the economic growth, urbanization and industrialization have brought about rural-to-urban migration and a great bulk of young population migrated to urban areas, who are seeking for educational and job opportunities. Korean society has also been under drastic change in every aspect of life involving norms, tradition, and attitude, etc. Therefore, in spite of the prejudice on 'living alone' still remaining, young people gradually leave parents and home, and further form nontraditional households in urban areas. Current increase in the number of one person households is partly attributable to the increase in high female educational attainment and female participation in economic activities. As the industrial structure in Korea changes from primary into secondary and tertiary industries, job opportunities for service/sales and manufacturing are opened to young female labor force in the process of industrialization. Contrary to the formation of one person households by young people, the aged single households are composed when children in family leave one by one because of marriage, education, employment. In particular, a higher proportion of aged female single households occur in rural areas due to the mortality difference by sex. Based on the data released form the 1990 Population and Housing Census and National Fertility and Family Health Survey in 1985 and 1991, the study tried to examine the state of one person households in Korea. According to Census data, the number of one person households increased to 1, 021, 000 in 1990, comprising 9.0 percent of total households. And the survey reveal that among total 11, 540 households, 8.0 percent, 923 households, are composed of one person households. Generally, the proportion of female single households is greater than that of male ones, and a big proportion of one person households is concentrated in the 25-34 age bracket in urban areas and 65 years and more in rural areas. It is shown than one person householders in urban areas have higher educational attainment with 59.2 percent high schooling and over in 1991, Job seeking proved to be the main reason for leaving home and forming one person households. The number of young female single households with higher education and economic self-reliance are found nil and the study did not allow to analyze the causal realtionship between female education and employment and one person household formation. However more research and deep analysis on the causal facors on one person household formation using statistical method are believed to be necessary.