• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.9
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• pp.782-787
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• 2008

First, the effect of the geometry such as the curved shape of the struts composing the truss structure of WBK is elaborated. Then, analytic solutions for the material properties of WBK and the maximum loads of a WBK-cored sandwich panel under bending are derived. A design optimization with the face sheet thickness and the core height selected as the design variables is presented for given slenderness ratios of the WBK core. Unless the face sheet thickness is limited, the optimal design to give the maximum load per weight is always found at a confluence of three failure modes, namely, face sheet yielding, indentation plastic, and core shear modeB plastic.

• Carbon letters
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• v.8 no.4
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• pp.307-312
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• 2007

A method for evaluating bulk sensitive structural characteristics of unpurified, as-purified, and acid treated single walled carbon nanotubes (SWNTs) was described in the present study. The optical spectra of SWNT solutions were well resolved after prolonged sonication and they were correlated to the diameter and the distribution of nanotubes. The acid-treated SWNTs were similar to as-purified SWNTs in terms of catalyst residue, radial breathing mode (RBM) in the Raman spectra, and the first band gap energy of semiconducting tubes in the optical spectra. The solution phase optical spectra were more sensitive to changes in the small diameter and metallic tubes after the acid treatment than were the RBM spectra.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.63-64
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• 2000

The low-temperature Si oxidation kinetics by inductively coupled oxygen plasma has been studied. Linear rate constants had negative values when the oxide growth rate was described by linear-parabolic growth law. The analysis of transverse-optical mode frequencies and etch rates indicated that the density of surface oxide was lower than that of bulk oxide. The oxidation kinetics could be explained qualitatively by assuming a surface layer with larger diffusion coefficient and a bulk layer with smaller diffusion coefficient.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• The Journal of the Acoustical Society of Korea
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• v.3 no.2
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• pp.23-29
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• 1984

In this paper surface acoustic wave beam track changers using symmetric multistrip coupler are designed on the basis of the perturbation theory, and its characteristics are studied. SAW beam track changers, which have the configuratio of the periodic array of metal strips, are designed with the following specifications ; the number of strips : 140, the strip period: 0.25λ, the ratios of the strip width to the period a/p: 0.5, 0.375, 0.25, respectively, and approximately consistent with the theoretical values, and also the bulk wave mode and the 2nd-order effects are suppressed by these track changers.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.22 no.8
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• pp.771-776
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• 2012

A technique is presented that uses a circular waveguide for the measurement of the bulk shear(S-wave) velocities of unconsolidated, saturated media, with particular application to near surface soils. The technique requires the measurement of the attenuation characteristics of the fumdamental T(0,1) mode that propagates along an embedded pipe, from which the acoustic properties of the surrounding medium are inferred. From the dispersion curve analysis, the feasibility of using T(0,1) mode which is non-dispersive and have constant attenuation over all frequency range is discussed. The principles behind the technique are discussed and the results of an experimental laboratory validation are presented. The experimental data are best fitted for the different depths of wetted sand and the shear velocities as a function of depths are formulated using power law curves.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.325-325
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• 2012

1차원구속 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si (111) 기판 위에 GaAs NWs 와 InAs NWs를 촉매를 이용하지 않고 성장 하였다. vapour-liquid-solid (VLS)방법으로 성장하는 GaAs NWs는 Ga의 droplet을 이용하게 되는데 Ga이 Si 기판위에 자연 산화막에 존재하는 핀홀(pinhole)로 이동하여 1차적으로 Ga droplet 형성하고 이후 공급되는 Ga과 As은 SiO2 보다 GaAs와 sticking coefficient 가 좋기 때문에 Ga drolept을 중심으로 빠른 선택적 성장을 하게 되면서 NWs로 성장을 하게 된다. 반면에 InAs NWs를 성장 할 시에 droplet 방법으로 성장을 하게 되면 NWs가 아닌 박막 형태로 성장을 하게 되는데 이것으로 InAs과 GaAs의 $SiO_2$와의 sticking coefficient 의 차이를 추측을 할 수 있다. InAs NWs는 GaAs NWs는 달리 native oxide를 이용하지 않고 InAs 과 Si 사이의 11.5%의 큰 lattice mismatch를 이용한다. 이종의 epitaxy 방법에는 크게 3종류 (Frank-van der Merwe mode, Stranski-Krastanov mode, Volmer-Weber mode)가 있는데 각기 다른 adatom 과 surface의 adhesive force로 나누어지게 된다. 이 중 Volmer-Weber mode epitaxy는 adatom 의 cohesive force가 surface와의 adhesive force보다 큰 경우 성장 되는 방식으로 InAs NWs 는 이 방식을 이용한다. 즉 droplet을 이용하지 않는 vapour-solid (VS) 방법으로 성장을 하였다. 이 때 In 의 migration을 억제하기 위해서 VLS mode 의 GaAs NWs 보다 As의 공급을 10배 이상 하였다. FE-SEM 분석 결과 GaAs NWs는 Ga droplet을 확인 할 수 있었고 InAs NWs는 droplet이 존재하지 않았다. GaAs와 InAs NW는 density와 length가 V/III가 높을수록 증가 하였다.

• Journal of Power System Engineering
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• v.17 no.2
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• pp.56-62
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• 2013

A technique is presented that uses a circular waveguide for the measurement of the bulk shear (S-wave) velocities of unconsolidated, saturated media, with particular application to near surface soils. The technique requires the measurement of the attenuation characteristics of the fundamental torsional mode that propagate along an embedded pipe, from which the acoustic properties of the surrounding medium are inferred. From the dispersion curve analysis, the feasibility of using fundamental torsional mode which is non-dispersive and have constant attenuation over all frequency range is discussed. The principles behind the technique are discussed and the results of an experimental laboratory validation are presented. The experimental data are best fitted for the different depths of wetted sand and the shear velocities are evaluated as a function of depths. Also the characteristics of the reflected signal from the defects are examined and the reflection coefficients are calculated for identifying the relation between defect sizes and the magnitude of the reflected signal.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1131-1137
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• 2015

Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

• Transactions of the Society of Information Storage Systems
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• v.7 no.2
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• pp.53-59
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• 2011

We have developed a compact and high-power mode-locked fiber laser for multilayered optical memory. Fiber lasers have the potential to be compact and stable light sources that can replace bulk solid-state lasers. To generate high-power pulses, we used stretched-pulse mode locking. The average power and pulse width of the output pulse from the fiber laser that we developed were 109 mW and 2.1 ps, respectively. The dispersion of the output pulse was compensated with an external single-mode fiber of 2.5 m length. The pulse was compressed from 2.1 ps to 93 fs by dispersion compensation. The fiber laser we have developed is possible to use as a light source of multilayered optical memory. We also present a fiber confocal microscope as an alignment-free readout system of multilayered optical memories. The fiber confocal microscope does not require fine pinhole position alignment because the fiber core is used as the point light source and the pinhole, and both of which are always located at the conjugated point. The configuration reduces the required accuracy of pinhole position alignment. With these techniques we can present an all-fiber recording and readout system for multilayered memories.