• 반도체디스플레이기술학회지
• /
• 제18권4호
• /
• pp.134-137
• /
• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

• Earthquakes and Structures
• /
• 제19권6호
• /
• pp.445-457
• /
• 2020

An ultra-high voltage (UHV) transmission system has the advantages of low circuitry loss, high bulk capacity and long-distance transmission capabilities over conventional transmission systems, but it is easier for this system to cross fault rupture zones and become damaged during earthquakes. This paper experimentally and numerically investigates the seismic responses and collapse failure of a UHV transmission tower-line system crossing a fault. A 1:25 reduced-scale model is constructed and tested by using shaking tables to evaluate the influence of the forward-directivity and fling-step effects on the responses of suspension-type towers. Furthermore, the collapse failure tests of the system under specific cross-fault scenarios are carried out. The corresponding finite element (FE) model is established in ABAQUS software and verified based on the Tian-Ma-Qu material model. The results reveal that the seismic responses of the transmission system under the cross-fault scenario are larger than those under the near-fault scenario, and the permanent ground displacements in the fling-step ground motions tend to magnify the seismic responses of the fault-crossing transmission system. The critical collapse peak ground acceleration (PGA), failure mode and weak position determined by the model experiment and numerical simulation are in relatively good agreement. The sequential failure of the members in Segments 4 and 5 leads to the collapse of the entire model, whereas other segments basically remain in the intact state.

• 대한금속재료학회지
• /
• 제49권12호
• /
• pp.930-936
• /
• 2011

In the present study, we show that the addition of Ag, an element having a positive enthalpy of mixing with Cu in the liquid state, enables the simultaneous enhancement of the glass forming ability and the plasticity in Cu-Zr-Ag bulk metallic glasses (BMGs). Rods of 4 mm diameter could be prepared with a fully amorphous structure and values of plastic strain up to 18% were measured under a compression mode for compositions around $Cu_{42.5}Zr_{47.5}Ag_{10}$. The possible role of Ag in the change of the atomic structure and the enhancement of the plastic strain in the ternary Cu-Zr-Ag BMGs is discussed based on analyses from transmission electron microscopy and EXAFS (extended X-ray absorption fine structure).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.55-55
• /
• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• 마이크로전자및패키징학회지
• /
• 제22권3호
• /
• pp.51-56
• /
• 2015

솔더 조인트의 신뢰성 강화를 위해서 다양한 pad finish material이 사용되고 있으며, 최근에는 Electroless Ni Electroless Pd Immersion Gold (이하 ENEPIG) pad가 많이 사용되고 있다. 따라서, 본 연구는 상용화 되어 사용중인 Electrolytic Ni (soft Ni) pad와 최근 이슈가 되고 있는 ENEPIG pad에 대한 신뢰성 평가에 관한 것으로, 다양한 Cu 함량에 따른 거동을 관찰 하였다. Reflow 후 솔더와 pad간의 접합층은 $Cu_6Sn_5$에 Ni이 치환된 형태의 금속간 화합물로 구성되어 있었으며, ENEPIG pad의 경우, 접합층과 Ni layer 사이에 $Ni_3P$ (dark layer) layer가 관찰 되었다. 또한, Cu 함량에 따라 Dark layer의 두께를 제어할 수 있었다. 충격 낙하 시험 후, 파괴모드를 관찰한 결과 soft Ni pad와 ENEPIG pad에서 서로 다른 파괴모드가 관찰 되었으며, soft Ni의 경우, 1차 IMC와 2차 IMC 경계에서 파괴가 관찰 되었고, ENEPIG pad의 경우, dark layer에서 파괴가 관찰 되었다. IMC와 pad material, bulk 솔더와의 lattice mismatch에 의해 불안정한 계면이 존재하며, 이는 연속적인 외부 충격에 의해 가해진 열적, 물리적 스트레스를 IMC 계면으로 전송하기 때문에, 솔더의 신뢰성 향상을 위해서는 솔더 벌크의 제어와 IMC의 두께 및 형상의 제어는 필요하다.

• 한국광물학회지
• /
• 제28권4호
• /
• pp.325-332
• /
• 2015

층상규산염광물인 천연산 어안석(KF)($K_{0.84}Ca_{3.99}Si_{7.70}O_{20}F_{0.72}{\cdot}8H_2O$)에 대한 고압실험을 상온에서 시행하였다. 출발시료의 격자상수 값은 다음과 같다: $a_0=8.954(2)\;{\AA}$, $c_0=15.795(2)\;{\AA}$, $V_0=1266.4(4)\;{\AA}^3$. 방사광과 대칭형 다이아몬드앤빌기기 및 각분산 X-선회절법을 이용하여 상온에서 7.7 GPa까지 15개의 고압 X-선회절데이터를 획득하였다. 어안석(KF)의 체적탄성률은 ${K_0}^{\prime}$을 4로 고정하였을 때 59(4) GPa로 계산되었다. 압력구간에서 1차상변이를 지시하는 근거는 관찰되지 않았으나, 2차 상변이에 대한 징후는 정규화압력 및 정규화응력변형 분석결과로부터 배제할 수 없다.

• 한국산학기술학회논문지
• /
• 제7권6호
• /
• pp.1047-1055
• /
• 2006

필드이온빔(FIB) 가공기를 써서 초고강도의 벌크다이아몬드를 가공하기 위해 이온 소오스의 종류와 가공 조건에 따른 나노급 미세 선폭의 최적조건을 알아보고 이에 근거한 2차원적인 텍스트의 가공과 3차원적인 박막요소의 가공을 시도하였다. 다이아몬드 기판과 실리콘 기판을 Ga과 $H_2O$ 소오스를 이용하는 FIB를 써서 30 kV 빔 전류를 10 pA $\sim$ 5 nA로 변화시키면서 패터닝하고 이때 각각 20 ${\mu}m$ 길이로 생성되는 선형 패턴의 선폭, 깊이, 에치속도, 에치형상, 깊이선폭비 (aspect ratio)를 확인하였다. 다이아몬드도 실리콘 기판과 마찬가지로 나노급 패턴의 형성이 가능하였다. $H_2O$ 소오스를 채용한 경우가 에치 깊이가 2배 정도 증가하였으며 동일한 가공 조건에서는 실리콘에 비해 다이아몬드의 에치 선폭이 감소는 경향이 있었다. 특히 다이아몬드는 절연성 때문에 차지가 축적되어 가공 중 이온빔이 불안정해지는 문제가 있었으나 차지 중화 모드를 이용하여 성공적으로 sub-100 nm급 선폭의 미세 가공이 가능하였다. 확인된 선폭가공 조건에 근거하여 2차원적으로 0.3carat의 보석용 다이아몬드의 거들부에 300여개의 글자를 FIB를 활용하여 선폭 240 nm정도로 명확히 기록하는 것이 가능하였다. $Ga^+$이온과 30 eV-30 pA로 조건에서 비교적 넓은 선폭과 Z축 depth 고정범위에서 많은 개인정보의 기록이 영구적으로 가능하였으며 전자현미경으로 재생이 가능하였다. 3차원적으로 두께 $1{\mu}m$의 박막요소를 FIB가공과 백금 용접으로 떼어낸 후 FIB가공으로 두께가 100 nm가 되도록 한 후 투과전자현미경을 이용하여 성분 분석을 하는 것이 성공적으로 수행될 수 있었다.

• Journal of Electrical Engineering and Technology
• /
• 제10권1호
• /
• pp.355-363
• /
• 2015

HVDC technology has become popular as an economic mode of bulk power transmission over very long distances. Polymeric insulators in HVDC power transmission lines are affected by surface tracking and erosion problems due to contamination deposit, which pose a greater challenge in maintaining the reliability of the HVDC system. In addition, polymeric insulators are also naturally affected by aging due to various environmental stresses, which in turn accelerates the surface tracking and erosion problems. Research works towards the improvement of tracking and erosion resistance of polymeric insulators by adding nano-sized fillers in the base material are being carried out worldwide. However, surface tracking and erosion performance of nano-filled aged polymeric insulators for HVDC applications are not well reported. Hence, in the present work, tracking and erosion resistance of the nano $Al(OH)_3$ filled silicone rubber insulation material has been evaluated under DC voltages at different filler concentrations and aged conditions, as per IEC 60587 test procedures. Leakage current and contact angle measurements were carried out to understand the surface hydrophobicity. Moving average technique was used to analyze the trend followed by leakage current. Water aged specimen shows less tracking resistance when compared with thermal aged specimen. It is observed that nano-filler concentration of 5% is even sufficient to get better tracking/erosion resistance under DC voltages.

• 대한기계학회논문집A
• /
• 제20권3호
• /
• pp.882-890
• /
• 1996

Mechanical properties, including Young's modulus, residual stress and rupture strength, of a thermally evaporated gold film have been measured form a blister test. In a theoretical study, the priniple of minimum potential energy and that of virtual work have been applied to the pressurized circular membrane problem, and load-deflection relations have been derived for typical membrane deflection mode of spheroidal shape. In an experimental study, circular gold membranes of 4800 A-thickness and 3.5mm diameter were fabricated by the silicon electropolishing technique. Mecahnical properties of the thin gold films were deduced from the load-deflection curves obtained by the blister test, Young's moduli, obtianed from blister test, have been in the range of 45-70 GPa, while those of bulk gold have been in the range of 78-80 GPa. Residual stresses in the evaporated gold films have been measured as 28-110MPa in tension, The rupture strength of the gold film has turned out to be almost equal to that of dental gold alloy (310-380MPa). It has been demonstrated that the present specimen fabrication method and blister test apparatus have been effective for simultaneous measurement of Young's modulus, residual stress and repture strength of thin solid films. Especially, the electropolishing technique employed here has provided a simple and practical way to fabricate thin membranes in a circular or an arbitrary shape, which could not be obtained by the conventional anisotropic silicon mecromachining technique.

• 한국재료학회지
• /
• 제8권7호
• /
• pp.591-595
• /
• 1998

이 연구에서는 HVPE법으로 두께가 350$\mu\textrm{m}$, 면적이 100$\textrm{mm}^2$인 크랙이 없는 freestanding GaN 단결정 기판을 제작하고, 그 특성을 조사하였다. 제작된 GaN 기판의 격자상수는 $c_{o}$ =5.18486$\AA$이었고, 이중 X-선 회절피크의 반치폭은 650 arcsec 이었다. 10K의 온도에서 측정한 PL 스펙트럼은 에너지 밴드 갭 부근에서 중성 도너와 중성 억셉터에 구속된 여기자 및 자유여기자의 소멸에 의한 발광과 결정 결함고 관계하는 깊은 준위에 의한 1.8eV 부근 발광으로 구성되었다. 또한 라만 E2(high)모드 주파수는 567cm-1로서 벌크 GaN 단결정의 값과 같았다. 한편, GaN 기판의 전기저항도형은 n형이었고, 전기 비저항은 0.02$\Omega$.cm이었으며, 캐리어 이동도와 농도는 각각 283$\textrm{cm}^2$/V.s와 1.1$\times$$10^{18}$$cm^{-3}$이었다.