• 제목/요약/키워드: Bulk Current Injection

검색결과 21건 처리시간 0.025초

Electrical Spin Transport in n-Doped In0.53Ga0.47As Channels

  • Park, Youn-Ho;Koo, Hyun-Cheol;Kim, Kyung-Ho;Kim, Hyung-Jun;Han, Suk-Hee
    • Journal of Magnetics
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    • 제14권1호
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    • pp.23-26
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    • 2009
  • Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

The Real Role of 4,4'-Bis[N-[4-{N,N-bis(3-methylphenyl)amino}phenyl]-N-phenylamino] biphenyl (DNTPD) Hole Injection Layer in OLED: Hole Retardation and Carrier Balancing

  • Oh, Hyoung-Yun;Yoo, Insun;Lee, Young Mi;Kim, Jeong Won;Yi, Yeonjin;Lee, Seonghoon
    • Bulletin of the Korean Chemical Society
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    • 제35권3호
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    • pp.929-932
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    • 2014
  • We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.

Solution processed organic photodetector utilizing an interdiffused polymer/fullerene bilayer

  • Shafian, Shafidah;Jang, Yoonhee;Kim, Kyungkon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.348-348
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    • 2016
  • Low dark current (off-current) and high photo current are both essential for a solution processed organic photodetector (OPD) to achieve high photo-responsivity. Currently, most OPDs utilize a bulk heterojunction (BHJ) photo-active layer that is prepared by the one-step deposition of a polymer:fullerene blend solution. However, the BHJ structure is the main cause of the high dark current in solution processed OPDs. It is revealed that the detectivity and spectral responsivity of the OPD can be improved by utilizing a photo-active layer consisting of an interdiffused polymer/fullerene bilayer (ID-BL). This ID-BL is prepared by the sequential solution deposition (SqD) of poly(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) solutions. The ID-BL OPD is found to prevent undesirable electron injection from the hole collecting electrode to the ID-BL photo-active layer resulting in a reduced dark current in the ID-BL OPD. Based on dark current and external quantum efficiency (EQE) analysis, the detectivity of the ID-BL OPD is determined to be $7.60{\times}1011$ Jones at 620 nm. This value is 3.4 times higher than that of BHJ OPDs. Furthermore, compared to BHJ OPDs, the ID-BL OPD exhibited a more consistent spectral response in the range of 400 - 660 nm.

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An Efficient Current-Voltage Model for the AlGaAs/GaAs N-P Heterojunction Diode and its Application to HPTs

  • Park, Jae-Hong;Kwack, Kae-Dal
    • Journal of Electrical Engineering and information Science
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    • 제2권4호
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    • pp.99-105
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    • 1997
  • The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

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CuPc: $F_4$-TCNQ 정공 수송층이 도입된 P-i-n형 유기 박막 태양전지의 성능 특성 연구 (Performance Characteristics of p-i-n Type Organic Thin-film Photovoltaic Cell with CuPc: $F_4$-TCNQ Hole Transport Layer)

  • 박소현;강학수;나타라잔센틸루마르;박대원;최영선
    • 폴리머
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    • 제33권3호
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    • pp.191-197
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    • 2009
  • 박막형 유기 태양전지의 성능 향상을 위하여 정공 수송층인 CuPc 층에 강한 p형 유기 반도체인 $F_4$-TCNQ을 도핑하여 ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5wt%)/CuPc:C60 (blending ratio 1 : 1)/C60/BCP/LiF/Al의 이종 접합 구조를 가지는 P-i-n형 유기 박막형 태양전지 소자를 진공증착 장비를 이용하여 제조한 후, 유기 태양전지의 전류 밀도-전압(J-V) 특성, 단락 전류($J_{sc}$), 개방 전압($V_{oc}$), 충진 인자(fill factor: FF), 에너지 전환 효율(${\eta}_e$) 등을 측정하고 계산하여 성능 굉가를 수행하였다. CuPc 층에 $F_4$-TCNQ을 도핑함으로써 에너지 흡수 스펙트럼에서 흡수강도가 증가하였으며, $F_4$-TCNQ가 도핑된 CuPc 박막에서 $F_4$-TCNQ 유기 분자의 분산성 향상, 박막의 표면 균일성, 주입 전류(injection currents) 향상 효과등에 의해서 제조된 p-i-n형 유기 박막 태양전지의 성능이 향상되는 것으로 확인되었다. 제조된 유기 태양전지의 에너지 전환 효율(${\eta}_e$)은 0.15%로 실리콘 태양전지와 비교해서 아직도 성능 향상을 위한 많은 노력이 필요함을 보여 준다.

박막 게이트 산화막을 갖는 n-MOSFET에서 SILC 및 Soft Breakdown 열화동안 나타나는 결함 생성 (Trap Generation during SILC and Soft Breakdown Phenomena in n-MOSFET having Thin Gate Oxide Film)

  • 이재성
    • 대한전자공학회논문지SD
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    • 제41권8호
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    • pp.1-8
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    • 2004
  • 두께가 3nm인 게이트 산화막을 사용한 n-MOSFET에 정전압 스트레스를 가하였을 때 관찰되는 SILC 및 soft breakdown 열화 및 이러한 열화가 소자 특성에 미치는 영향에 대해 실험하였다. 열화 현상은 인가되는 게이트 전압의 극성에 따라 그 특성이 다르게 나타났다. 게이트 전압이 (-)일 때 열화는 계면 및 산화막내 전하 결함에 의해 발생되었지만, 게이트 전압이 (+)일 때는 열화는 주로 계면 결함에 의해 발생되었다. 또한 이러한 결함의 생성은 Si-H 결합의 파괴에 의해 발생할 수 있다는 것을 중수소 열처리 및 추가 수소 열처리 실험으로부터 발견하였다. OFF 전류 및 여러 가지 MOSFET의 전기적 특성의 변화는 관찰된 결함 전하(charge-trapping)의 생성과 직접적인 관련이 있다. 그러므로 실험 결과들로부터 게이트 산화막으로 터널링되는 전자나 정공에 의한 Si 및 O의 결합 파괴가 게이트 산화막 열화의 원인이 된다고 판단된다. 이러한 물리적 해석은 기존의 Anode-Hole Injection 모델과 Hydrogen-Released 모델의 내용을 모두 포함하게 된다.

폴리이미드 박막의 공간전하현상 및 수분의 영향 (Space Charge Phenomena in Polyimide Films and Effects of Absorbed Water)

  • 윤주호;최용성;황종선;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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    • pp.82-85
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    • 2008
  • Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

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폴리이미드 박막의 공간전하현상 (Space Charge Phenomena in Polyimide Films)

  • 윤주호;최용성;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.311-312
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    • 2007
  • Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

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폴리이미드 박막의 공간전하현상에 관한 연구 동향 (A Research Trend on High Density Polyethylene Electrical Strength)

  • 최근호;오창근;신현만;황종선;최용성;이경섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1984-1985
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    • 2007
  • Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

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Rubrene:CuPc 정공 수송층이 도입된 p-i-n형 유기 박막 태양전지의 성능 특성 연구 (Performance Characteristics of p-i-n type Organic Thin-film Photovoltaic Cell with Rubrene:CuPc Hole Transport Layer)

  • 강학수;황종원;강용수;이혜현;최영선
    • Korean Chemical Engineering Research
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    • 제48권5호
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    • pp.654-659
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    • 2010
  • 박막형 유기 태양전지의 효율 향상을 위하여 정공 수송층인 CuPc 층에 p형 유기 반도체인 rubrene을 함량 별로 도핑하여 ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al의 이종접합구조를 가지는 p-i-n형 유기 박막형 태양전지 소자를 제조한 후, 유기 태양전지의 전류 밀도-전압(J-V) 특성, 단락 전류($J_{sc}$), 개방 전압($V_{oc}$), 충진 인자(fill factor:FF), 에너지 전환 효율(${\eta}_e$) 등을 측정하고 계산하여 성능 평가를 수행 하였다. 정공 수송층으로 사용된 CuPc 층에 rubrene을 도핑함으로써 에너지 흡수 스펙트럼에서 흡수 강도가 감소하였다. 그러나 CuPc 보다 큰 밴드갭을 가지며 높은 정공 이동도를 가지는 결정성 rubrene의 도핑에 의해 제조된 p-i-n형 유기 박막 태양전지의 성능은 향상 되는 것으로 확인되었다. 제조된 유기 태양전지의 에너지 전환 효율(${\eta}_e$)은 1.41%로 실리콘 태양전지와 비교해서 아직도 성능 향상을 위한 많은 노력이 필요함을 보여 준다.