• Journal of Information Display
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• 제10권4호
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권2호
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• pp.114-126
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• 2013

In this paper, we present a set of methodologies to model the electromagnetic susceptibility (EMS) testing of I/O buffers for mobile system memory based on the bulk current injection (BCI) method. An efficient equivalent circuit model is developed for the current injection probe, line impedance stabilization network (LISN), printed circuit board (PCB), and package. The simulation results show good correlation with the measurements and thus, the work presented here will enable electromagnetic susceptibility analysis at the integrated circuit (IC) design stage.

• 한국전자파학회논문지
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• 제25권11호
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• pp.1164-1171
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• 2014

Bulk Current Injection(BCI) 테스트는 전류 주입 프로브를 사용하여 측정하고자 하는 Integrated Circuit(IC)에 전류를 주입하여 Electromagnetic Compatibility(EMC) 규격을 충족시키는지 시험하는 방법이다. 본 논문에서는 국제전기표준회의에서 제정한 IEC 62132-part 3에서 규정하는 BCI 테스트의 전류 주입 프로브를 대체하여, RF 잡음을 인가할 수 있는 마이크로스트립 커플러 구조를 제안하였다. 전통적으로 높은 전원 전압을 사용하는 자동차 IC 테스트에 사용되어 오던 BCI 전류 주입 프로브를 저 전압을 사용하는 저 전력 IC의 테스트에 사용할 수 있는 마이크로스트립 커플러 구조를 개발하여 그 유효성을 100 MHz에서부터 1,000 MHz까지의 주파수 영역에서 비교 및 검증하였다. 또한, 주파수에 따라 전류 주입 프로브를 통한 RF 잡음 인가와 마이크로스트립 커플러 구조를 통한 RF 잡음 인가 시 규정한 노이즈를 얻는데 필요한 전력을 dBm 단위로 측정, 비교하여 마이크로스트립 커플러 구조를 이용한 경우에 더 적은 전력으로 필요한 RF 잡음을 주입할 수 있음을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.202-211
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• 2014

The bulk current injection (BCI) and direct power injection (DPI) method have been established as the standards for the electromagnetic susceptibility (EMS) test. Because the BCI test uses a probe to inject magnetically coupled electromagnetic (EM) noise, there is a significant difference between the power supplied by the radio frequency (RF) generator and that transferred to the integrated circuit (IC). Thus, the immunity estimated by the forward power cannot show the susceptibility of the IC itself. This paper derives the real injected power at the failure point of the IC using the power transfer efficiency of the BCI method. We propose and mathematically derive the power transfer efficiency based on equivalent circuit models representing the BCI test setup. The BCI test is performed on I/O buffers with and without decoupling capacitors, and their immunities are evaluated based on the traditional forward power and the real injected power proposed in this work. The real injected power shows the actual noise power level that the IC can tolerate. Using the real injected power as an indicator for the EMS test, we show that the on-chip decoupling capacitor enhances the EM noise immunity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 대한전자공학회논문지SD
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• 제39권3호
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• pp.9-19
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• 2002

본 논문에서는 thermionic emission 모델을 이용하여 SCH 양자우물 레이저 다이오드에 대한 L-I-V특성을 해석적으로 도출하였다. SCH의 bulk 캐리어와 양자우물 속박 캐리어의 관계를 도출하였고, 주입된 전류를 각 영역에서의 캐리어 재결합을 고려한 전류 연속 방정식을 만족하도록 하였다. 또한, high level injection과 전하 중성 조건하에 ambipolar 확산 방정식을 이용하여 캐리어 분포를 고찰하였다. 위 해석적인 모델을 이용하여 계산한 결과, 클래딩 영역의 전위장벽 변화가 전류 전압 특성 변화의 주요 원인으로 나타났다. 또한 thermionic emission에 의한 주입 전류의 forward flux 증가가 캐리어 주입을 증가시키고, 레이저 다이오드의 직렬 저항을 감소시키는 것을 보였다.

• 한국전자파학회논문지
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• 제24권4호
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• pp.436-447
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• 2013

본 논문에서는 IC(Integrated Circuit) 전자파 전도내성 시험 방법인 BCI(Bulk Current Injection)와 DPI(Direct Power Injection)를 이용하여 1.8 V I/O 버퍼에 대한 IC 전자파 전도내성을 시험하였다. IC 전자파 전도내성 시험을 회로 해석기를 사용하여 시뮬레이션 할 수 있는 등가회로 모델(model)을 개발하고 검증하였다. BCI와 DPI의 주파수에 따른 forward 전력을 비교한 결과는 주파수 성분에 따라 실제 IC에 도달하는 전자파(electromagnetic, EM) 노이즈의 양이 제한됨을 보여준다. 시뮬레이션을 통해, 가해지는 RF(Radio Frequency) 노이즈가 전달되는 경로의 삽입손실을 구하여, 하나의 시험 방법만으로는 넓은 주파수 영역에서 실질적인 IC 전자파 내성시험의 어려움을 발견하였다. 따라서 규정된 시험 방법을 보완하여 넓은 주파수 영역의 노이즈에 대해 신뢰도 높은 IC 전자파 전도내성 시험 방법을 제안한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• 전자공학회논문지A
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• 제33A권12호
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• pp.39-46
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• 1996

In AlGaAs/GaAs HBT the temperature dependence of DC parameters was investigated over the temperature range between 95K and 580K. The temperature dependence of DC parameters depends on the relative contribution of each of the current components suc as emitter-injection-current, base-injection-current, bulk recombination current, interface recombination curretn, thermal generation ecurrent and avalanche current due to impact ionization within the collector space charge layer in a specific temperature. In this paper we investigated the temperature effects on DC parameters such as V$_{BE,ON}$ current gain, input and output characteristics, V$_{CE, OFF}$, R$_{E}$, R$_{C}$ and analyzed the origins, and extracted the qualitativ econditions for a stable HBTs against the temperature variation. Finally, in order to keep HBTs stable with respect to the variation of temperature, the valance-band-energy-discontinuity at emitter-base heterojunction should be large enough to enhance the effect of carrier suppression at a relatively high temperature. In addition the recombination centers, especially around collector junction, should be removed and the area of emitter and collector junction should be identical as well.