• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.42-47
• /
• 2004

Metallic glasses are amorphous meta-stable solids and are now being processed in bulk form suitable for structural applications including impact. Bulk metallic glasses have many unique mechanical properties such as high yield strength and fracture toughness, good corrosion and wear resistance that distinguish them from crystalline metals and alloys. However, only a few studies could be found mentioning the dynamic response and damage of metallic glasses under impact or shock loading. In this study, we employed a small explosive detonator for the dynamic indentation on a Zr-based bulk amorphous metal in order to evaluate the damage behavior of bulk amorphous metal under impact loading. These results were compared with those of spherical indentation under quasi-static and impact loading. The interface bonded specimens were adopted to observe the appearances of subsurface damage induced during indentation under different loading conditions.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2005년도 창립60주년 기념 추계 학술대회
• /
• pp.138.2-138.2
• /
• 2005

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.497-500
• /
• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.368.1-368.1
• /
• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 춘계학술대회
• /
• pp.101-106
• /
• 2003

In order to investigate the mechanical behavior of newly developed materials, the evaluation of mechanical properties using small-size specimen is essential. For those purposes, an instrumented impact testing apparatus, which provides the load-displacement curve under impact loading without oscillations, was devised. To develop the test procedure with the setup, the impact behaviors of various kinds of structural materials such as S45C, SCM4, Ti alloys (Ti-6V-4Al) and Zr-based bulk amorphous metal, were investigated through the instrumented Charpy V-notch impact tests. The calibrations of the dynamic load and displacement that was calculated based on the Newton' second law were carried out through the quasi-static load test and the comparison of a directly measured value using a laser displacement meter. Satisfactory results could be obtained. The crack initiation and propagation processes during impact fracture could be well divided on the curve, depending on the intrinsic characteristic of specimen tested; ductile or brittle. The absorbed impact energy in Zr-basd BAM was largely used for crack initiation not for crack propagation process. The fracture surfaces under impact loading showed different feature when compared with the static cases.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.497-500
• /
• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

• 대한기계학회논문집A
• /
• 제27권10호
• /
• pp.1630-1635
• /
• 2003

The deformation and fracture behaviors of a bulk amorphous metal, Zr-based one (Zr$\_$41.2/Ti$\_$13.8/Cu$\_$12.5/Ni$\_$10/Be$\_$22.5/: Vitreloy), were investigated over a strain rate range (7x10$\^$-4/～4 s$\^$-1/). The uniaxial compression test and the indentation test using 3mm-diameter WC balls were carried out under quasi-static loading conditions. As a result, at the uniaxial compressive state, the fracture stress of the material was very high (～1,700MPa) and the elastic strain limit was about 2%. The fracture strength showed a strain rate independent behavior up to 4 s$\^$-1/. Using indentation tests, the plastic deformation behavior of the Zr-based BAM up to a large strain value of 15% could be achieved, even though it was the deformation under locally constrained condition. The Meyer hardness of the Zr-based BAM measured by static indentation tests was about 5 GPa and it revealed negligible strain hardening behavior. At indented sites, the plastic indentation occurred forming a crater and well-developed multiple shear bands were generated around it along the direction of 45 degree when the indentation load exceeded 7kN. With increasing indentation load, shear bands became dense. The fracture surface of the specimen after uniaxial compressive tests showed vein-like pattern, typical morphology of many BAMs.

• Applied Microscopy
• /
• 제26권2호
• /
• pp.235-241
• /
• 1996

Amophization and decomposition behaviour in $Mg_{62}Cu_{26}Y_{12}$ alloy prepared by melt spinning method and wedge type metal mold casting method have been investigated by a detailed transmission electron microscopy. Amorphous phase has formed in melt-spun ribbon. In the case of the wedge type specimen, however, the amorphous phase has formed only around the tip area within about 2 mm thickness. The remaining part of the wedge type specimen consists of crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$. The supercooling for crystallization behaviour of the amorphous $Mg_{62}Cu_{26}Y_{12}$ alloy, ${\Delta}T_x$ has been measured to be about 60 K. Such a large undercooling of the crystallization bahaviour enables formation of the amorphous phase in the $Mg_{62}Cu_{26}Y_{12}$ alloy under the cooling rate of $10^{2}K/s$. The amorphous $Mg_{62}Cu_{26}Y_{12}$ has decomposed into crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$ after heat treatment at $170^{\circ}C\;and\;250^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
• /
• pp.96-99
• /
• 1993

대면적 액정 표시판 (Liquid Crystal Display:LCD) panel내(內)의 구동소자인 비정질 실리콘 (amorphous silicon) 박막 트랜지스터 (Thin Film Transistor:TFT)의 구동신호전달 소자특성 향상을 위한 본(本) 연구의 목적은 액정 panel TFT 제조공정 상(上)의 증착금속 전극박막들의 Test Elements Group(TEG) metal line pattern별(別) 전기적 저항특성 평가에 있다. 현(現) TFT 전극용(用)으로 개발이 진행 중(中)인 Aluminum(Al), Tantalum(Ta) 및 Chromium(Cr) 이 특성평가 대상 금속 박막으로 선정 되었으며, 이들 금속막의 증착 thickness 와 TEG metal line width가 저항특성 변수로 성립 되었다. 본(本) 실험을 통해 금속 박막의 TEG line width별(別) 체적(體積)저항 (bulk resistance), 면(面)저항(sheet resistance), 비(比)저항 (resistivity) 및 기판 상(上)의 metal pattern 위치 변화에 따른 전기적 저항 uniformity 특성변화 평가가 있었다. TEG metal line 측정 변위에 따른 저항율의 선형변화 특성도 연구 되었으며, metal line별(別) 전기적 연속, 불연속 배선 단락 특성(electrical continuity test) 관찰도 있었다.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.1246-1251
• /
• 2003

The fracture behaviors of Zr-based bulk amorphous metals(BAMs) having compositions of $Zr_{55}Al_{10}Ni_{5}Cu_{30}$, were investigated under impact loading and quasi-static conditions. For experiments, a newly devised instrumented impact testing apparatus and the subsize Charpy specimens were used. The influences of loading rate and the notch shape on the fracture behavior of the Zr-based BAM were examined. The Zr-based BAMs showed an elastic deformation behavior without any plastic deformation on it before fracture. Most fracture energies were absorbed in the process of the crack initiation. The maximum load and fracture absorbed energy under quasi-static condition were larger than those under impact condition. However, there existed relatively insignificant notch shape effect. Fracture surfaces under impact loading were smoother than those under quasi-static loading. The absorbed fracture energy appeared differently depending on the extent of the vein-like pattern region due to the shear bands developed at the notch tip. It can be found that the fracture energy of the Zr-Al-Ni-Cu alloy is closely related with the development of shear bands during fracture.