• 제목/요약/키워드: Buffer temperature

검색결과 787건 처리시간 0.029초

Evaluation on the buffer temperature by thermal conductivity of gap-filling material in a high-level radioactive waste repository

  • Seok Yoon;Min-Jun Kim ;Seeun Chang ;Gi-Jun Lee
    • Nuclear Engineering and Technology
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    • 제54권11호
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    • pp.4005-4012
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    • 2022
  • As high-level radioactive waste (HLW) generated from nuclear power plants is harmful to the human body, it must be safely disposed of by an engineered barrier system consisting of disposal canisters and buffer and backfill materials. A gap exists between the canister and buffer material in a HLW repository and between the buffer material and natural rock-this gap may reduce the water-blocking ability and heat transfer efficiency of the engineered barrier materials. Herein, the basic characteristics and thermal properties of granular bentonite, a candidate gap-filling material, were investigated, and their effects on the temperature change of the buffer material were analyzed numerically. Heat transfer by air conduction and convection in the gap were considered simultaneously. Moreover, by applying the Korean reference disposal system, changes in the properties of the buffer material were derived, and the basic design of the engineered barrier system was presented according to the gap filling material (GFM). The findings showed that a GFM with high initial thermal conductivity must be filled in the space between the buffer material and rock. Moreover, the target dry density of the buffer material varied according to the initial wet density, specific gravity, and water content values of the GFM.

전력용 고온초전도 금속테이프 제작을 위한 첨단 레이저공정 개발 (Development of advanced laser processing for the fabrication of HTS metallic tapes for power applications)

  • 이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.688-691
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    • 1997
  • Good quality superconducting $YBa_2Cu_30_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with yttria-stabilized zirconia(YSZ) buffer layers by in situ pulsed laser deposition in a multi-target processing chamber. Generally, Hastelloy exhibits excellent resistance to corrosion, fatigue, thermal shock, impact, and erosion. However, it is difficult to make films on flexible metallic substrates due to interdiffusion problems between metallic substrates and superconducting overlayers. To overcome this difficulty, it is necessary to use YSZ buffer layer since it will not only limit the interdiffusion process but also minimize the surface microcrack formation due to smaller mismatch between the film and the substrate. In order to enhance the crystallinity of YBCO films on metallic substrates, YSZ buffer layers were grown at various temperatures different from the deposition temperature of YBCO films. On YSZ buffer layer grown at higher temperature than that for depositing YBCO film, the YBCO thin film was found to be textured with c-axis orientation by x-ray diffraction and had a zero-resistance critical temperature of about 85K.

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Influence of Growth Temperature for Active Layer and Buffer Layer Thickness on ZnO Nanocrystalline Thin Films Synthesized Via PA-MBE

  • Park, Hyunggil;Kim, Younggyu;Ji, Iksoo;Kim, Soaram;Lee, Sang-Heon;Kim, Jong Su;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.203.1-203.1
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    • 2013
  • Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

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THE PERFORMANCE OF CLAY BARRIERS IN REPOSITORIES FOR HIGH-LEVEL RADIOACTIVE WASTE

  • Pusch, Roland
    • Nuclear Engineering and Technology
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    • 제38권6호
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    • pp.483-488
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    • 2006
  • Highly radioactive waste is placed in metal canisters embedded in dense clay termed buffer. The radioactive decay is associated with heat production, which causes degradation of the buffer and thereby time-dependent loss of its waste-isolating potential. The buffer is prepared by compacting air-dry smectite clay powder and is initially not fully water saturated. The evolution of the buffer starts with slow wetting by uptake of water from the surrounding rock followed by a long period of exposure to heat, pressure from the rock and chemical reactants. It can be described by conceptual and theoretical models describing processes related to temperature (T), hydraulic (H), mechanical (M) and chemical performance (C). For temperatures below 90 C more than 75 % of the smectite will be preserved for 100 000 years but cementation may reduce the excellent performance of the buffer to a yet not known extention.

PLD법을 이용한 Buffer Layer 증착온도에 따른 As-doped ZnO 박막의 특성 (Characteristics of As-doped ZnO thin films with various buffer layer temperatures prepared by PLD method)

  • 이홍찬;심광보;오영제
    • 센서학회지
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    • 제15권2호
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    • pp.84-89
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    • 2006
  • Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

Buffer layer의 표면 거칠기와 열처리조건이 GaN 에픽층의 품질에 미치는 영향 (Effects of Surface Roughness and Thermal Treatment of Buffer Layer on the Quality of GaN Epitaxial Layers)

  • 유충현;심형관;강문성
    • 한국전기전자재료학회논문지
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    • 제15권7호
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    • pp.564-569
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    • 2002
  • Heteroepitaxial GaN films were grown on sapphire substrates in order to study the effects of the buffer layer's surface roughness and thermal treatment on the epitaxial layer's quality. For this, GaN buffer layers were grown at $550^{\circ}C$ with various TMGa flow rates and durations of growth, and annealed at $1010^{\circ}C$ for 3 min after the temperature was raised by 23 ~ $92^{\circ}C/min$, and then GaN epitaxial layers were grown at $1000^{\circ}C$. It has been found that the buffer layer's surface roughness and the thermal treatment condition are critical factors on the quality of the epitaxial layer. When a buffer layer was frown with a TMGa flow rate of $24\mu mole/min$ for 30 sec, the surface roughness of the buffer lather was minimum and when the thermal ramping rate was $30.6^{\circ}C/min$ on this layer, the successively grown epitaxial layer's crystalline and optical qualities were optimized with a specular morphology. The minimum full width at half maximum(FWHM) of GaN(0002) x-ray diffraction peak and that of near-band-edge(NBE) peak from a room temperature photoluminescence (PL) were 5 arcmin and 9 nm, respectively.

Gradient YZO Buffer Deposition on RABiTS for Coated Conductor

  • Kim, T.H.;Kim, H.S.;Ko, R.K.;Song, K.J.;Lee, N.J.;Ha, D.W.;Ha, H.S.;Oh, S.S.;Pa, K.C.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.240-241
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    • 2007
  • In general, high temperature superconducting coated conductors have intermediary buffers layer consisting of seed, diffusion barrier and cap layers. Simplification of the oxide materials buffer architecture in the fabrication of high temperature superconducting coated conductors is required because the deposition of multi-layers buffer architecture leads to a longer manufacturing time and a higher cost process of coated conductors. Thus, single buffer layer deposition seems to be important for practical coated conductor manufacturing process. In this study, a single gradient layered buffer deposition process of YZO for low cost coated conductors has been tried using DC reactive sputtering technique. About several thick YZO gradient single buffer layers deposited by DC co-sputtering process were found to act as a diffusion layer.

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가로변 완충녹지의 조성유형에 따른 음이온 농도 비교 분석 (Comparative Analysis of Anion Concentration by the Type of Roadside Buffer Green)

  • 윤용한;주창훈;박헌;김정호
    • 한국환경과학회지
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    • 제23권7호
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    • pp.1339-1347
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    • 2014
  • This study were performed on roadside buffer green in Songpa-dong, Songpa-gu, Seoul in order to analyze the anion concentration according to the type of composition of roadside buffer green. Buffer green separating the physical structure of the measurement points and measurement locations were separated by roadside, green interior, the other side of the road. planting density and deposit of trees per each buffer green was measured in the order of mounding type> slope type> the plain type. If the measured temperature of the location-specific weather elements roadside> inside> the other side of the road in order of measurement and the temperature is lowered farther away from the road. If the relative humidity of the road on the other side> inside> the roadside in order to measure and this is the opposite of the temperature tendency. According to physical structure reduction of the temperature on the other side of the road and roadside in order of mounding type> the plain type> slope type was measured. As a result of measuring a anion therefore concentration of the anion inside of melt is in order of mounding type> the plain type> slope type, tended to match the melt characteristics. According to measured positions anion concentration is in the order of the other side of the road> inside> the roadside was measured. As a result of correlation analysis, in the case of measurement location-specific weather and anions the temperature is positive correlation, relative humidity is negative correlation and that's results of previous studies were supported.

버퍼막 두께 및 버퍼막 열처리 온도에 따른 ZnO/b-ZnO/p-Si(111)의 전기적 특성 변화 및 이종접합 다이오드 특성 평가 (Dependence of the Diode Characteristics of ZnO/b-ZnO/p-Si(111) on the Buffer Layer Thickness and Annealing Temperature)

  • 허주회;류혁현
    • 한국진공학회지
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    • 제20권1호
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    • pp.50-56
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    • 2011
  • 본 논문에서는 버퍼막 두께 및 열처리 온도에 따른 ZnO/b-ZnO/p-Si(111) 기반 이종접합 다이오드 전류 특성에 대한 연구가 진행되었고, b-ZnO (ZnO buffer layer) 버퍼막 두께 및 열처리 온도에 따른 p-Si(111) 기판 위에 증착시킨 ZnO 박막의 구조적, 전기적 특성 또한 연구되었다. X-ray diffraction (XRD) 방법을 이용하여 ZnO 박막의 구조적 특성을 측정하였고, semiconductor parameter analyzer를 이용하여 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 I-V 특성을 평가하였다. XRD 분석 결과 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 70 nm에서 ZnO 박막은 우세한 (002) 방향의 c-축 배향성을 갖는 육방정계(hexagonal wurtize) 결정 구조를 나타내었다. 전기적 특성인 운반자 농도, 비저항 값의 경우에는 버퍼막 열처리 온도 $700^{\circ}C$, 버퍼막 두께 50 nm에서 우수한 전기적 특성(비저항: $2.58{\times}10^{-4}[{\Omega}-cm]$, 운반자 농도: $1.16{\times}10^{20}[cm^{-3}]$)을 보였다. 또한 ZnO/b-ZnO/p-Si(111) 이종접합 다이오드의 전류 특성은 버퍼막 열처리 온도 $700^{\circ}C$에서 버퍼막 두께가 증가할수록 전류 특성이 향상되는 경향을 보였다.

$CeO_2$/$BaTiO_3$이중완충막을 이용한 YBCO 박막 제작 (Fabrication of YBCO Superconducting Film with $CeO_2$/$BaTiO_3$Double Buffer Layer)

  • 김성민;이상렬
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.959-962
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    • 2000
  • We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1${\mu}{\textrm}{m}$. When BaTiO$_3$ is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4$\times$10$^4$ A/$\textrm{cm}^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

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