• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.863-866
• /
• 2009

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
• /
• v.8 no.1
• /
• pp.10-13
• /
• 1979

The study for bubbling phenomena to influence heat transfer in gas - liquid contactors. The sparged contactor is gaining importance for gas-liquid chemical reactions. In this paper, correlations between Reynolds number and heat transfer coefficient were studied and experimental expressions were also obtained over broth of areas, namely, laminar area and turbulent area respectively.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.18 no.4
• /
• pp.903-911
• /
• 1994

This study addresses the phenomena of bubbling, icing, eruption, component varieties of the evaporated natural gas, and volumetric heat transfer coefficients obtained during the operation of a proposed LNG evaporator between LNG and water in direct contact. In the present investigation, the explosive and eruption phenomena within the water column were not observed during the entire operation of the heat exchanger. Compared with the natural gas produced by conventional LNG evaporator, the analysis of the gas produced by the direct contact LNG evaporator shows that nitrogen, methane, and ethane components were reduced by 0.002~0.007mol%(4~14%), 1.6~1.92mol%(1.9~2.3%) and 0.17~1.28mol%(1.1~8.4%) respectively, while the moisture content was rather increased by 0.51~0.76mol%. The maximum volumetric heat transfer coefficient of the direct contact heat exchanger was found to be $21, 800kW/m^3\cdotK$.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.1
• /
• pp.41-47
• /
• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.