• 제목/요약/키워드: Brightness and current density

검색결과 56건 처리시간 0.032초

Blue organic light emitting diodes with carbazole based small molecules and color tunning by controlled side group

  • 김용범;안영주;박지호;강민웅;우형석;박종욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.514-516
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    • 2003
  • We have fabricated an air stable blue emitting organic electroluminescent devices (OLEDs) with a carbazole based emitting molecule, Bis(3-N-ethylcarbazolyl)terephthalidene (BECP). Our device emits strong blue at 472 nm with the luminance efficiency of near 1 lm/W at a voltage and current density of 8 V and 5.7 mA/cm2, respectively, reaching the brightness up to 5000 cd/m2 at 270 mA/cm2. Finally, in order to tune the emission color from blue to green, we have used Bis(3-N-ethylcarbazolyl)cynoterephthalidene (BECCP), a derivative of BECP by adding cyno group in side chain, and compared the electroluminscence (EL) of OLEDS prepared by BECCP to that of BECP based OLEDs.

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나노카본을 이용한 조명용 신광원에 관한 연구 (Study of New Light Source with Nano Carbon Material)

  • 김광복;김용원;정한기;송윤호
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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    • pp.31-34
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    • 2006
  • The characteristic of carbon nano fiber (CNF) as electron emitters was described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD), mixed with binders and conductive materials, and then were formed by screen-printing process. In order to increase effectively field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as $2.5V/{\mu}m$ and current density was as large as $0.15mA/cm^2$ of $4.5V/{\mu}m$ with electric field. After the vacuum packaged panel of 5-inch in diagonal, the measured white brightness was as high as $7000cd/m^2$ at 1900V of anode and 700V of gate voltage.

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Naphthalene Trisulfonic Acid가 니켈 전착층의 표면 특성에 미치는 영향 (Effects of Naphthalene Trisulfonic Acid on the Surface Properties of Electrodeposited Ni Layer)

  • 이주열;김만;권식철;김정환;김인곤
    • 한국표면공학회지
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    • 제39권1호
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    • pp.13-17
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    • 2006
  • The effects of an organic additive, naphthalene trisulfonic acid (NTSA), contained in the nickel sulfamate bath on the surface properties of the electrodeposited nickel layer were investigated through electrochemical technique, x-ray diffraction analysis, and microscopic observation. The addition of NTSA facilitated the oxidation process of electrodeposited nickel layer during anodic scan and also increased the hardness and internal stress of the nickel film as the applied current density became higher. It seems that NTSA modulated the deposit structure during electrodeposition and so induced higher distribution of (110) orientation with respect to (200). With the increase of the NTSA in the bath, nickel layer was formed in small grain size, which resulted in enhanced surface evenness and brightness.

The Dimmable Single-stage Asymmetrical LLC Resonant LED Driver with Low Voltage Stress Across Switching Devices

  • Kim, Seong-Ju;Kim, Young-Seok;Kim, Choon-Taek;Lee, Joon-Min;La, Jae-Du
    • Journal of Electrical Engineering and Technology
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    • 제10권5호
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    • pp.2031-2039
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    • 2015
  • In the LED lighting industry, the dimming function in the LED lamp is required by demands of many consumers. To drive this LED lighting, various types of power converters have been applied. Among them, an LLC resonant converter could be applied for high power LED lighting because of its high efficiency and high power density, etc. The function of power factor correction (PFC) might be added to it. In this paper, a dimmable single-stage asymmetrical LLC resonant converter is proposed. The proposed converter performs both input-current harmonics reduction and PFC using the discontinuous conduction mode (DCM). Also, the lower voltage stress across switching devices as well as the zero voltage switching (ZVS) in switching devices is realized by the proposed topology. It can reduce cost and has high efficiency of the driver. In addition, the regulation of the output power by variable switching frequency can vary the brightness of a light. In the proposed converter, one of the attractive advantages doesn’t need any extra control circuits for the dimming function. To verify the performance of the proposed converter, simulation and experimental results from a 300W prototype are provided.

All Non-Dopant RGB Composing White Organic Light-Emitting Diodes

  • Yeh, Shi-Jay;Chen, Hung-Yang;Wu, Min-Fei;Chan, Li-Hsin;Chiang, Chih-Long;Yeh, Hsiu-Chih;Chen, Chin-Ti;Lee, Jiun-Haw
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1583-1586
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    • 2006
  • All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

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In 도핑된 ZnO 박막의 투명 전극과 유기 발광 다이오드 특성 (Transparent Anodic Properties of In-doped ZnO thin Films for Organic Light Emitting Devices)

  • 박영란;김용성
    • 한국세라믹학회지
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    • 제44권6호
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    • pp.303-307
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    • 2007
  • Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.

ZnO 박막 전자수송층의 공기 노출에 의한 양자점 발광다이오드의 특성 변화 (Effect of Air Exposure on ZnO Thin Film for Electron Transport Layer of Quantum Dot Light-Emitting Diode )

  • 서은용;이경재;황정하;김동현;임재훈;이동구
    • 센서학회지
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    • 제32권6호
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    • pp.455-461
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    • 2023
  • We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

현장 적용이 가능한 X선 CT 시스템 개발 I - X선 촬영법을 이용한 목재의 밀도 측정 - (Development of Portable X-ray CT System I - Evaluation of Wood Density using X-ray Radiography -)

  • 김광모;이상준;이전제
    • Journal of the Korean Wood Science and Technology
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    • 제34권1호
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    • pp.15-22
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    • 2006
  • 국내에서 문화재로 지정되어 관리되고 있는 많은 목조 고건축물들의 효과적인 보존 및 관리를 위해서는 목재의 내부 상태를 정확하게 평가할 수 있든 비파괴 검사법이 요구된다. 따라서 본 연구에서는 현장에서 적용 가능한 X선 CT 시스템을 개발하기 위한 연구의 일환으로, 먼저 휴대형 soft-X선 촬영 장치를 사용한 목재의 밀도측정 방법을 확립하고 그 적용 가능성을 확인하고자 하였다. 먼서 측정방법을 확립하기 위하여 X선 강도와 필름명도 사이의 상관관계를 분석하였으며, 또한 관전류와 관전압의 변화에 따른 X선 초기강도의 변화를 확인하여 정량화 하였다. 다음으로 목재의 밀도와 연륜각, 두께가 질량감쇠계수에 미치는 영향을 확인하고, 목재의 침량감쇠계수를 결정하여 Beer의 법칙에 적용함으로써 X선 측정결과로부터 목재의 밀도를 계산할 수 있는 식을 제시하였다. 마지막으로 X선 촬영법을 통해 측정한 밀도를 기존의 치수법에 의한 측정결과와 비교함으로써 앞에서 결정된 밀도측정 방법의 작용 가능성을 확인할 수 있었다. 이상의 결과는 앞으로 개발하고자 하는 X선 CT 시스템에서 입력값으로 요구되는 밀도를 측정하는 방법을 확립하는데 있어서 효과적으로 활용될 수 있을 것으로 기대된다.

청색 발광층에 의한 백색 OLED의 발광 특성 (Emission Properties of White Organic Light-Emitting Diodes with Blue Emitting Layer)

  • 천현동;나현석;주성후
    • 한국전기전자재료학회논문지
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    • 제26권6호
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    • pp.451-456
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    • 2013
  • To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO(150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5 nm) / Al(200 nm) structure. The total thickness of light-emitting layer with co-doping and blue-doping/co-doping using a host-dopant system was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir$(acac) in UGH3 as host, respectively. The OLED characteristics were changed with position and thickness of blue doping layer and co-doping layer as light-emitting layer and the best performance seemed in structure of blue-doping(5 nm)/co-doping(20 nm) layer. The white PHOLEDs showed the maximum current density of $34.5mA/cm^2$, maximum brightness of $5,731cd/m^2$, maximum current efficiency of 34.8 cd/A, maximum power efficiency of 21.6 lm/W, maximum quantum efficiency of 15.6%, and a Commission International de L'Eclairage (CIE) coordinate of (0.367, 0.436) at $1,000cd/m^2$.

Tin-Cobalt 합금 도금공정에서 도금물성 향상을 위한 최적 용액조성 디자인 (Plating Solution Composition Control of Tin-Cobalt Alloy Electroplating Process)

  • 이승범;홍인권
    • 공업화학
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    • 제17권2호
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    • pp.150-157
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    • 2006
  • 최근 들어 크롬대체 도금공정의 필요성이 대두되고 있는 가운데, 크롬도금과 색차가 적고 기계적 특성이 우수하며 환경 친화적인 주석 계 합금도금의 사용이 확대되고 있다. 따라서 본 연구에서는 Sn-Co 합금도금공정을 바탕으로 광택제, 착화제로서 glycine 사용에 대한 연구를 수행하고자 하였다. Sn-Co 합금도금과 glycine 첨가에 따른 물리적 특성 및 표면 광택측정을 위해 Hull-cell 분석 및 도금표면분석을 수행하였다. Hull-cell 분석결과 glycine의 첨가량이 증가함에 따라 광택특성은 우수한 것으로 관찰되었으며, 표면광택성이 가장 우수한 도금조건으로는 $50^{\circ}C$, pH = 8의 조건에서 전전류 공급량 1 A로 1 min간 도금한 경우 음극전류밀도 $1A/dm^2$인 영역을 추천할 수 있었다. 동일조건의 pilot 실험을 $10{\mu}m$ 두께로 Ni하지 도금 후 Sn-Co 합금도금액 기본조성인 0.03 M $SnCl_{2}{\cdot}2H_{2}O$, 0.05 M $CoSO_{4}{\cdot}7H_{2}O$, 0.7 M $K_{4}P_{2}O_{7}$의 혼합 용액에서 수행하 였다. $0.2{\sim}0.6 {\mu}m$의 도금두께를 갖는 Sn-Co 합금도금 표면의 기계적 특성과 도금표면의 성분분석 결과 glycine의 첨가량이 15 g/L일 때 우수한 밀착성, 내식성, 내마모성을 보였다. 따라서 Sn-Co 합금도금공정에 glycine을 첨가한 용액을 크롬도금공정의 최적 도금용액으로 추천할 수 있었다.