• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.499-504
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• 1998

ZnO varistors having a composition of 98.0 mol% ZnO 1.0 mol% $Bi_2O_3$ 0.5 mol% $MnO_2$ were prepared by the Pechini process and the sintering behavior and electrical characteristics were studied. ZnO varis-색 powder with $1.5\mu\textrm{m}$ mean diameter and narow particle size distribution was obtained using the Pechni pro-cess. Typical intermediate stage grain growth of liquid phase sintering was observed by sintering at $1100^{\circ}C$ At this temperature ZnO varistors having uniform grain size and Bi-rich liquid phase distributed uniformly along grain boundaries were prepared. The nonlinear coefficients of the ZnO varistors were in the range of 40-60 The breakdown voltages of the varistors were nearly inversely propeortional to the grain size which reflects that ZnO varistors prepared by the Pechini process have uniform distribution of Bi-rich liquid phase along grain boundaries It is believed that the microstructures of ZnO varistors can be controlled effectively by using the Pechini process which makes the control of the electrical properties of ZnO varistors possible.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.42-47
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• 2010

Polymer insulating materials such as cross linked polyethylene (XLPE) are employed in electric cables used for extra high voltage. These materials can degrade due to chemical, mechanical and electric stress, possibly caused by voids, the presence of extrinsic materials and protrusions. Therefore, this study measured discharge patterns, discharge phase angle, quantity and occurrence frequency as well as changes in XLPE under different temperatures and applied voltages. To quantitatively analyze the irregular partial discharge patterns measured, the discharge patterns were examined using a statistical program. A three layer sample was fabricated, wherein the upper and lower layers were composed of non-void XLPE, while the middle layer was composed of an air void and copper particles. After heating to room temperature and $50^{\circ}C$ and $80^{\circ}C$ in silicone oil, partial discharge characteristics were studied by increasing the voltage from the inception voltage to the breakdown voltage. Partial discharge statistical analysis showed that when the K-means clustering was carried out at 9 kV to determine the void discharge characteristics, the amount discharged at low temperatures was small but when the temperature was increased to $80^{\circ}C$, the discharge amount increased to be 5.7 times more than that at room temperature because electric charge injection became easier. An analysis of the kurtosis and the skewness confirmed that positive and negative polarity had counterclockwise and clockwise clustering distribution, respectively. When 5 kV was applied to copper particles, the K-means was conducted as the temperature changed from $50^{\circ}C$ to $80^{\circ}C$. The amount of charge at a positive polarity increased 20.3% and the amount of charge at a negative polarity increased 54.9%. The clustering distribution of a positive polarity and negative polarity showed a straight line in the kurtosis and skewness analyses.

• Progress in Superconductivity and Cryogenics
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• v.12 no.3
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• pp.21-24
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• 2010

A cryogenic insulation technique for a high voltage and a large current capacity of a conductor are now two big issues in a field of recent R&D projects of superconducting power devices, especially a superconducting power transformer. For the large rated currents of the power transformer, it is well known that lots of 2nd generation superconducting conductor, so called coated conductor, should be stacked together with transpositions in order to get an even distributions of the currents. We had come up with an idea of a CTCC (Continuously Transposed Coated Conductor) as a conductor for a large power superconducting transformer, and keep trying to verify the usefulness of the conductor. As one of the efforts of verifying, we prepared and tested a sample CTCC with insulations for high voltage, which includes the epoxy coating and Nomex$^{(R)}$ wrapping. This paper contains the insulation process and dielectric breakdown test results. We expect the results obtained from this experiment to improve an insulation technique for high voltages in various cryogenic environments[1,2].

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.75-87
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• 2010

For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.167-174
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• 2005

Smaller size and higher integration of electronic components make smaller gap between metal conducting layers in electronic package. Under harsh environmental conditions (high temperature/humidity), electronic component respond to applied voltages by electrochemically ionization of metal and metal filament formation, which lead to short failure and this phenomenon is termed electrochemical migration(ECM). In this work, printed circuit board(PCB) is used for determination of ECM characteristics. Copper leads of PCB are soldered by eutectic solder alloys. Insulation breakdown time is measured at $85^{\circ}C,\;85{\%}RH$. CAF is the main mechanism of ECM at PCB. Pb is more susceptible to CAF rather than Sn, which corresponds well to the corrosion resistance of solder materials in aqueous environment. Polarization tests in chloride or chloride-free solutions fur pure metal and eutectic solder alloys are performed to understand ECM characteristics. Lifetime results show well defined log-normal distribution which resulted in biased voltage factor(n=2) by voltage scaling. Details on migration mechanism and lifetime statistics will be presented and discussed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.819-824
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• 2016

The accelerated thermal aging of CSPE (chlorosulfonated polyethylene) was carried out for 33.64 and 67.27 days at 110[$^{\circ}C$], equivalent to 40 and 80 years of aging at 50[$^{\circ}C$], respectively. These samples were referred to as CSPE-0y, CSPE-40y and CSPE-80y, respectively. As the accelerated thermally aged years of the CSPE increase, the insulation resistance[$\Omega$] at 20[Hz], 500[Hz], and 2[KHz], and the percent elongation [%EL] of the CSPE decrease. However, the dissipation factor($tan{\delta}$) at 20[Hz], 500[Hz], and 2[KHz], the apparent density[$g/cm^3$], the glass transition temperature and the melting temperature of the CSPE were increased. The period of time that the voltage has to be applied until electric breakdown of the CSPE-0y is longer than that of the CSPE-40y, and the CSPE-80y, but the dielectric strength of the CSPE-80y is lower than that of the CSPE-0y and the CSPE-40y. The differential temperatures after the AC and DC voltages are applied to CSPE-0y, CSPE-40y and CSPE-80y are 0.026~0.028[$^{\circ}C$], 0.030~0.042[$^{\circ}C$], 0.018~0.045[$^{\circ}C$], respectively. The variations of temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE-0y, CSPE-40y and CSPE-80y. It is found that the dielectric loss owing to the dissipation factor[$tan{\delta}$] is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the separation of the branch chain of CSPE polymer from the main chain of the polyethylene as a result of thermal stress due to accelerated thermal aging as well as by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$ after seawater soaking.