• 제목/요약/키워드: Breakdown voltages

검색결과 248건 처리시간 0.026초

The Performance of AC PDP with Grooved Dielectric Structure in High Xe Contents

  • Kim, Tae-Jun;Bae, Hyun-Sook;Jeong, Dong-Cheol;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.88-90
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    • 2003
  • We reported an AC PDP structure with grooved front panel dielectric layer. The structure exhibits low breakdown voltage, better luminance, and better endurance to crosstalk in high Xe contents. It also shows less luminous efficacy then conventional structure because of the thinner dielectric layer, but we can apply the higher Xe contents to the grooved dielectric structure, which results in the higher luminous efficacy. We made experiments with the Xe contents from 4 to16% and total gas pressure from 400 to 600Torr. The grooved dielectric structure shows the improvement of 20% luminous efficacy and 17% luminance. The firing voltages lower about 40V at 600Torr and Xe 12, 16%. The discharge characteristics of grooved dielectric structure are verified also with 2D simulation.

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졸-겔법으로 형성한 강유전체 PZT박막의 고온 단시간 열처리효과 및 전자 디바이스에의 응용 (The rapid thermal annealing effects and its application to electron devices of Sol-Gel derived ferroelectric PZT thin films)

  • 김광호
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.152-156
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    • 1994
  • The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

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PTC $BaTiO_3$ 및 전극의 직류 및 교류 특성 (AC & DC Electrical Characterization of PTC $BaTiO_3$ and Electrodes)

  • 전표용;최경만
    • 한국세라믹학회지
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    • 제28권2호
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    • pp.101-108
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    • 1991
  • 0.2 mo1% La doped BaTiO3 samples were prepared by a wet chemical process (Pechini process) and electrical conductivity were measured from annealing temperatures(800-110$0^{\circ}C$) to room temperature continuously. 2 probe I-V characteristics showed that Pt electrodes were non-ohmic below about 80$0^{\circ}C$ for Ladoped sample. I-V curves showed varistor behavior and breakdown voltages showed PTC-like behavior. AC complex impedance of 0.2 La and 0.05 Mn mo1% doped BaTiO3 samples with three different electrodes (electroless Ni, Pt, Ag electrodes) were measured with temperature variation. Complex impedance plots showed that the samples with electroless Ni electrodes have negligible electrode resistance. Samples with Ag or Pt paste electrodes showed large electrode resistance. PTC effect, which is defined as the ratio of maximum resistance to minimum resistance, was found to be less than 10 for 0.2 mo1% La doped dense sample however greater than 105 with codoping of 0.05 mo1% Mn and 0.2 mol% La.

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자기정렬 이중 리쎄스 공정에 의한 전력 MESFET 소자의 제작 (Power MESFETs Fabricated using a Self-Aligned and Double Recessed Gate Process)

  • 이종람;김도진;윤광준;이성재;강진영;이용탁
    • 전자공학회논문지A
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    • 제29A권2호
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    • pp.77-79
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    • 1992
  • We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.

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불평등 전계중에서 $SF_6$가스의 절연특성 (Dielectric Characteristics of $SF_6$ Gas in Inhomogeneous Field)

  • 이창준;이복희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 하계학술대회 논문집 C
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    • pp.1870-1872
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    • 1996
  • This paper presents dielectric characteristics of $SF_6$ gas stressed by the non-oscillating and oscillating impulse voltages in inhomogeneous fields disturbed by metallic protrusion. The propose of this investigation is to present the predischarge development and dielectric characteristics of $SF_6$ gas under VFTOs. The experiments were carried out using a needle-to-plane and two needles-to-plane gap geometries in the gas pressure ranges from 0.1 to 0.5 MPa. The gap separation was 22 mm and the needle-shaped protrusions were made of stainless steel 10 mm in length and 1.0 mm in diameter. As a result, it was found that the breakdown mechanism and predischarge current are principally dependent on applied voltage waveform and polarity.

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가교폴리에틸렌(XLPE)의 부분방전에 의한 초음파 검출 (Detection of Ultrasonic Wave Signals Associated with Partial Discharge in XLPE)

  • 김성규;이상우;구경철;김충년;김인식;이광식;이동인
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 1999년도 학술대회논문집-국제 전기방전 및 플라즈마 심포지엄 Proceedings of 1999 KIIEE Annual Conference-International Symposium of Electrical Discharge and Plasma
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    • pp.136-140
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    • 1999
  • Measurements of AE signals caused by partial discharges were performed by using an ultrasonic measurement technique to diagonise the electrical treeing deterioration in XLPE cable. We also examined the partial discharge magnitude and AE signals(peak-to-peak) with the increase of the deterioration time. From these results, it was found that AE signal due to partial discharge can be greatly detected at the peak value of positive polarities prior to the breakdown voltages, and the magnitude of AE signals was closely related to the current pulses by the increase of deterioration, and it appeared that AE signals(peak-to-peak) was proportional to partial discharge magnitude. Attenuation and time-delaying characteristics of ultrasonic signals propagated in various polymers sample by using ultrasonic oscillation and receiving systems are also reported as a basic data of ultrasonic measurements in XLPE cable.

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대기중 연소화염에 의한 교류 플래시오버전압의 저하 특성 (Reduction Characteristics of AC Flashover Voltage by Combustion Flames under Atmospheric Conditions)

  • 김인식
    • 한국전기전자재료학회논문지
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    • 제14권12호
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    • pp.1041-1047
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    • 2001
  • In this paper, reduction characteristics of the ac flashover voltage in the horizontal air gap of sphere-sphere/needle-needle electrode system were investigated when the combustion flame was present near the high-voltage electrodes. The voltage and current waveforms were measured, when the flashover is occurred, in order to examine the flashover polarity by flame. The reduction characteristics of ac flashover voltage were discussed with the thermal ionization process, the relative air density and the deflection phenomena in the shape of flames that changed by the corona wind and coulomb\`s force. As the results of an experimental investigation, It was found that the reduction of flashover voltages in sphere-sphere system, in comparison with the no-flame case, are 79.9 [%] for k=0, 82.9 [%] for k=0.5, 87.5 [%] for k=1.0, 85.0 [%] for h=0 [cm], 40.8 [%] for h=5 [cm] and 28.2 [%] for h=9 [cm] when ac voltage is applied.

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MMIC Capacitor를 위한 PECVD $Si_3N_4$ 박막에 관한 연구 (A Study on the $Si_3N_4$ Thin Films Deposited by PECVD for MMIC Capacitor)

  • 성호근;송민종;김용갑;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.412-415
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    • 2003
  • [ $Si_3N_4$ ] thin film is the good material to fabricate the capacitors at MMIC processes. Normally, $Si_3N_4$ thin films is used to dielectric in the MIM capacitor and film thickness is $2000\;{\AA}$. Insulator(or dielectric) was deposited by PECVD at our MIM structure with air bridge which connect between top metal and contact pad. We optimized PECVD process to fabricate the good capacitors which can be applied at the true MMIC. The thickness of our $Si_3N_4$ thin films was $1000\;{\AA}$ shallower than $2000\;{\AA}$, and their breakdown voltages were above 70V.

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초음파 조사에 의한 복합재료의 계면특성의 보강 개선에 관한 연구(1) (A Study to Improve the Interface Strength of Composite Materials by the Radiation of Ultrasonic Energy (1))

  • 이상국;전춘생;김익년
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.813-816
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    • 1988
  • This study is to investigate the adhesive strength of composite material's interface on the experimental methode of tree growth in the material. The results are as follows 1) The irradiations of ultrasonic energy cause the mechanical vibration in the polymer composite materials of fluid state, so then bring about physical dispersion and heat for inorganic materials, being supposed to produce chemical interlinking reaction, decreasing of voids between filler and matrix. 2) As the intensity of ultrasonic energy and its irradiated time are larger, the tree inception and breakdown voltages increase and the tree growing is slower. so we obtain that the interface adhesive force can be strengthened by the irradiation of ultrasonic energy.

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산불화재에 의한 전력선 섬락사고 기초연구(I) (Basic Study on Flashover Characteristics of Power Lines by Forest Fire(I))

  • 김충년;이상우;이광식;김인식;이동일;박춘식
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 추계학술대회 논문집 전력기술부문
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    • pp.387-390
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    • 2001
  • The experiments were performed in model conductors under the application of ac and dc high-voltages. The results of an experimental investigation into the flashover characteristics of air dielectric strength in the presence of oil/gas flame are reported. It is demonstrated that flame can reduce by more than half, 80% in maximum the breakdown voltage of a model line. Taking a horizontal model line with a k=0.5, it can be seen from the results that the reduction of flashover levels, in comparison with the no-flame case, are 78.7[%] for h=0[cm], 59.6[%] for h=3[cm], 46.4[%] for h=6[cm], 40.4[%] for h=9[cm] and 23.2[%] for h=12[cm] when ac voltage is applied.

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