• Title/Summary/Keyword: Breakdown voltage

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A Study on Breakdown Voltage Improvement of the Trench IGBT by Extending a Gate Oxide Region beneath the Trench Gate (트렌치 케이트 하단의 게이트 산화막 확장을 통한 트렌치 IGBT의 항복전압 향상에 대한 연구)

  • Lee, Jae-In;Kyoung, Sin-Su;Choi, Jong-Chan;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.74-75
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    • 2008
  • TIGBT has some merits which are lower on-state voltage drop and smaller cell pitch, but also has a defect which is relatively lower breakdown voltage in comparison with planar IGBT. This lower breakdown voltage is due to the electric field which is concentrated on beneath the vertical gate. Therefore in this paper, new trench IGBT structure is proposed to improve breakdown voltage In the new proposed structure, a narrow oxide beneath the trench gate edge where the electric field is concentrated is extended into rectangular shape to decrease the electric field. As a result, breakdown voltage is improved to 23%.

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Dielectric Breakdown Voltage According to Flow Velocity and Temperature of Vegetable Oils (식물성절연유의 유동속도와 온도에 따른 절연파괴전압)

  • Choi, Sun-Ho;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.6
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    • pp.821-826
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    • 2012
  • The streaming electrification process of vegetable insulating oils occurring when the oils contacted with solid material in a high power transformer circulation system seems to cause electrical discharge incidents and may cause failures. We therefore measured the dielectric breakdown voltage tendency of vegetable insulating oils flowing on the surface of the charging device with various velocity and temperature. First, the relation between the velocity and breakdown voltage tendency of vegetable oils, can be explained by volume effect and v-t effect. Second, experimental results show that applied voltage have little effect on dielectric breakdown voltage, when vegetable insulating oils used for large power transformer.

The Electrical Breakdown Characteristics of Broken Toughened Glass Stem Insulator (장간유리애자 파손시 절연파괴 특성)

  • Jung, Jong-Wook;Jung, Jin-Soo;Kim, Young-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.8
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    • pp.1398-1406
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    • 2008
  • This paper describes the electrical breakdown characteristics of broken toughened glass stem insulators by comparing with those of sound ones. The broken toughened glass stem insulators were taken from the electric railway field. According to the international standards, the sound and broken toughened glass stem insulators were tested in electrical strength. In the test, the power frequency voltage and the impulse voltage with a standard waveform were applied to the insulators. The power frequency voltage tests were carried out under both dry and wet condition and the impulse voltage tests under only dry condition. The acquired results were compared one another and discussed in electrical breakdown characteristic by analyzing the flashover progress pictures. As a result, the electrical strength of the broken toughened glass insulators was acquired and the processes of the surface breakdown on the toughened glass insulators were confirmed.

Relation of Breakdown Voltage and Channel Doping Concentration of Sub-10 nm Double Gate MOSFET (10 nm 이하 DGMOSFET의 항복전압과 채널도핑농도의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.6
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    • pp.1069-1074
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    • 2017
  • Reduction of breakdown voltage is serious short channel effect (SCE) by shrink of channel length. The deviation of breakdown voltage for doping concentration is investigated with structural parameters of sub-10 nm double gate (DG) MOSFET in this paper. To analyze this, thermionic and tunneling current are derived from analytical potential distribution, and breakdown voltage is defined as drain voltage when the sum of two currents is $10{\mu}A$. As a result, breakdown voltage increases with increase of doping concentration. Breakdown voltage decreases by reduction of channel length. In order to solve this problem, it is found that silicon and oxide thicknesses should be kept very small. In particular, as contributions of tunneling current increases, breakdown voltage increases.

A Study on Characteristic Improvement of IGBT with P-floating Layer

  • Kyoung, Sinsu;Jung, Eun Sik;Kang, Ey Goo
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.686-694
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    • 2014
  • A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

Relation between Conduction Path and Breakdown Voltages of Double Gate MOSFET (DGMOSFET의 전도중심과 항복전압의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.4
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    • pp.917-921
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    • 2013
  • This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

A Novel IGBT with Double P-floating layers (두 개의 P-플로팅 층을 가지는 새로운 IGBT에 관한 연구)

  • Lee, Jae-In;Choi, Jong-Chan;Yang, Sung-Min;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.14-15
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    • 2009
  • Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

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Effect of Heat Treatment on Properties of Varistors (바리스터의 물성에 미치는 열처리 효과)

  • 홍경진;민용기;오수홍;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.955-958
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    • 2001
  • The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

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The AC, DC Dielectric Breakdown Characteristics according to Dielectric Thickness and Inner Electrode Pattern of High Voltage Multilayer Ceramic Capacitor (고압 적층 칩 캐패시터의 유전체 두께 및 내부전극 형상에 따른 AC, DC 절연 파괴 특성)

  • Yoon, Jung-Rag;Kim, Min-Kee;Lee, Seog-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.12
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    • pp.1118-1123
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    • 2008
  • High voltage multilayer ceramic capacitors (MLCCs) are classified into two classes-those for temperature compensation (class I) and high dielectric constant materials (class II). We manufactured high voltage MLCC with temperature coefficient characteristics of C0G and X7R and studied the characteristics of electric properties. Also we studied the characteristics of dielectric breakdown voltage (V) as the variation of thickness in the green sheet and how to pattern the internal electrodes. The dielectric breakdown by electric field was caused by defects in the dielectric materials and dielectric/electrode interface, so the dielectric thickness increased, the withstanding voltage per unit (E) thickness decreased. To overcome this problem, we selected the special design like as floating electrode and this design affected the increasing breakdown voltage(V) and realized the constant withstanding voltage per unit thickness(E). From these results, high voltage application of MLCCs can be expanded and the rated voltage can also be develop.

An Analysis on Optimal Design and Electrical Characteristics of CT-IGBT(Circular Trench IGBT) (CT-IGBT의 최적 설계 및 전기적 특성에 관한 분석)

  • Kwak, Sang-Hyeon;Seo, Jun-Ho;Seo, In-Kon;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.22-23
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

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