• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.65-68
• /
• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.66 no.4
• /
• pp.659-665
• /
• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.3
• /
• pp.164-169
• /
• 2002

This paper mainly discusses the hard breakdown of 2.2-nm-thick $SiO_2$ films. It is shown that the hard breakdown event of a 2.2-nm-thick $SiO_2$ film greatly depends on the applied electric field. It is strongly suggested that the local weak spots created by applying a low initial stress to a 2.2-nm-thick $SiO_2$film resist the onset of hard breakdown. In other words, it is anticipated that the stored electrostatic energy is fast dissipated by trap-assisted tunneling in 2.2-nm-thick $SiO_2$ film. Consequently, it is strongly suggested that 2.2-nm-thick $SiO_2$ films are intrinsically quite robust.

• Journal of the Optical Society of Korea
• /
• v.11 no.1
• /
• pp.34-39
• /
• 2007

Laser-induced breakdown of colloidal suspensions, such as polystyrene, $ZrO_2$, and $SiO_2$ particles in diameters of 100-400 nm in water is investigated by nanosecond flash-pumped Nd:YAG laser pulses operating at a wavelength ${\lambda}$= 532 nm. The breakdown threshold intensity is examined in terms of breakdown probability as a function of laser pulse energy. The threshold intensity for $SiO_2$ particles ($1.27{\times}10^{11}\;W/cm^2$) with a size of 100 nm is higher than those for polystyrene and $ZrO_2$ particles with the same size, namely $5.7{\times}10^{10}$ and $5.5{\times}10^{10}\;W/cm^2$, respectively. Results indicate that the absorption of five photons is required to induce ionization of $SiO_2$ particles, whereas the other particles necessitate four-photon absorption. These breakdown thresholds are compared with those measured by nanosecond pulses from a diode-pumped Nd:YAG laser having a different focusing geometry.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.6
• /
• pp.316-323
• /
• 2004

HTS transformer is one of the most promising devices to supply enough electric energy for quick increase consumption. However, for practical design of the HTS transformer, it is necessary to establish the research on breakdown, V-t characteristics, degradation, and so on. In this paper, we discussed breakdown characteristics and V-t characteristics of polyimide/L$N_2$ and glass fiber reinforced plastic/$LN_2$ composite insulations. These composite insulations have been used as turn-to-turn and layer-to-layer insulations for HTS transformer respectively, Moreover, we investigated the degradation of these insulation samples after breakdown using microscope and SEM photograph.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.3-8
• /
• 2004

The Pulse Width Modulation (PWM) Inverter plays an important role in express locomotive. Especially after traction motors are fed by fast switching inverters, the interturn insulation is destroyed more heavily. However, a new type of polyimide corona resistant film is developed and used in insulation of traction motors. In order to investigate the service life of this kind of traction motor, the mechanism and characteristics of dielectric breakdown of polyimide corona resistant are studied in the paper. Experiments have been carried out on specimen according to the condition of traction motor. The breakdown point of tested sample film is analyzed through energy spectrum analysis and electron microscopic photograph. At last, it is presented that the characteristics and mechanism of breakdown of polyimide corona resistance film.

• Progress in Superconductivity and Cryogenics
• /
• v.13 no.2
• /
• pp.17-20
• /
• 2011

Superconducting magnetic energy storage (SMES) has attracted a great deal of interest from the viewpoint of energy saving. The magnet of conduction-cooled high temperature superconducting (HTS) SMES is cooled down by a cryocooler. One of the most important problems to be assured the protection of magnet and cryocooler is breakdown at cryogenic temperature. In this study, we investigated insulation materials such as Kapton, Aluminum Nitride(AIN), Alumina($Al_2O_3$), glass fiber reinforced plastics(GFRP) and vacuum in cryogenic temperature. Also, we analyzed statistically the Weibull distribution of breakdown voltage.

• Analytical Science and Technology
• /
• v.22 no.2
• /
• pp.141-147
• /
• 2009

A laser induced breakdown spectroscopy (LIBS) measurement was carried out to derive an optimized measurement condition with a high reproducibility and to grow a plasma sphere to 20 mm high under a 600 mtorr vacuum in order to improve an accuracy of measurement. The measurement of the plasma was taken at a 6.0 mm distance, in the direction of a plasma sphere, from a sample. This location belongs to the outer sphere region in the plasma. The calibration curve of 'Ni' and 'Cu' was acquired by the signal intensity ratio and the atomic ratio for the samples, and linear regression of 'Cu' was $R^2$=0.9886, and the linear regression of 'Ni' was $R^2$=0.9988. The accuracy of LIBS was improved pre-existence as the measurement error of 'Ni' was 0.78%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.6
• /
• pp.609-613
• /
• 2023

In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.366-370
• /
• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.