• 한국전산유체공학회지
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• 제17권2호
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• pp.93-99
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• 2012

The present study focuses on the case of developing flow with in a channel containing a long array of sinusoidal waves (2a/${\lambda}$=0.1, ${\lambda}$=h, ${\lambda}$ is the wavelength, 2a is the wave height, h is the mean channel depth) at the bottom wall. The Reynolds number defined with channel height, h and the mean velocity, U, is Re=6,700. The channel is sufficiently long such that transition is completed and the flow is fully developed over the downstream half of the channel. For the case of an incoming steady flow with no resolved turbulence, the instantaneous flow fields in the transition region are characterized by the formation of arrays of highly-organized large-scale hairpin vortices whose dimensions scale with that of the roughness elements. The paper explains the mechanism for the formation of these arrays of hairpin vortices and shows these eddies play the primary role in the formation of the large-scale streaks of high and low velocity over the wavy wall region. The presence of resolved turbulence in the incoming flow, reduces the streamwise distance needed for the streaks to develop over the wavy region, but does not affect qualitatively the transition process. In the fully-developed region, isolated and trains of large-scale hairpins play an important role in the dynamics of the streaks over the wavy wall.

• 한국해안해양공학회지
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• 제7권1호
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• pp.12-23
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• 1995

불규칙파에 의한 연안류를 수치모형으로 해석하였으며, 수치모형에 사용되는 제 경험식들을 개선하였다. 불규칙파의 쇄파조건으로 Kitaigorodskii의 평형조건식을 수정하여 사용하였으며, 실제 해저면에서의 마찰력을 계산하기 위하여 연흔의 생성과 형상에 따른 조고의 증가와 토사가 이동할 때 발생하는 에너지 손실을 고려한 조고의 증가를 동시에 고려하였다. 연흔 형상 산정식으로 Nielsen 식과 Madsen-Rogengaus 식을 사용하였는데, 연흔형상에 대한 두 식의 산정결과는 비슷하나 등가조고 산정에 도입되는 비례상수의 수치가 달라 추정된 등가조고에는 상당한 차이를 보이고 있다. 난류에너지식과 확산길이식에 사용되는 경험상수를 최적화 기법으로 결정하였으며, 이를 이용하여 불규칙파에 의한 연안류를 예측하였다.

• 한국정보통신학회논문지
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• 제4권5호
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• pp.1127-1134
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• 2000

RF magnetron reactive sputtering 법으로 $RuO_2$ 박막을 제작하여, O2/(Ar+O2) 비와 기판온도에 따른 박막의 결정화 특성, 미세구조, 표면거칠기, 전기적 비저항을 조사하였다. O2/(Ar+O2) 비가 감소하고 기판온도가 증가함에 따라 $RuO_2$ 박막은 (110) 면에서 (101) 면으로 우선배향방향이 변하였다. O2/(Ar+O2) 비가20% 에서 50% 로 증가함에 따라, $RuO_2$박막의 표면거칠기는 2.38nm 에서 7.81nm로, 비저항은 $103.6 \mu\Omega-cm\; 에서\; 227 \mu\Omega-cm$로 증가하는 추세를 나타내는 반면에, 증착속도는 47nm/min에서 17nm/min 로 감소하였다. 기판온도가 상온에서 $500^{\circ}C$ 로 증가함에 따라 비저항은 $210.4\mu\Omega-cm\; 에서\; 93.7\mu\Omega-cm$로 감소하였고, 표면거칠기는$300^{\circ}C$ 에서 증착한 박막이 2.3nm 로 가장 우수하였다. 열처리 온도가$400^{\circ}C$에서$650^{\circ}C$ 로 증가함에 따라 비저항은 $RuO_2$ 박막의 결정성 향상으로 인해 감소하였다. 이들 결과로부터 02/(Ar+02) 비 20%, 기판온도 loot 에서 증착한 $RuO_2$ 박막의 표면거칠기 및 비저항 특성이 가장 우수하여 강유전체 박막의 하부전극으로 사용하기에 적합함을 알 수 있었다.

• 전자공학회논문지D
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• 제35D권7호
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• pp.72-78
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• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.963-966
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• 2000

Plasma display panel (PDP) is a type of flat panel display utilizing the light emission that is produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalk from adjacent sub-pixels. Mold for forming barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing process such as screen printing, sand-blasting and photosensitive glass methods. Mold for PDP barrier ribs have stripes of micro grooves transferring stripes of glass-material wall. In this paper. Stripes of grooves of which width 48 um, depth 124um, pitch 274um was acquired by machining the material of WC with dicing saw blade. Maximum roughness of the bottom and sidewall of the grooves was respectively 120 nm, 287 nm. Maximum tilt angle caused by difference between upper-most width and lower-most width was 2$^{\circ}$. Maximum Radius of curvature of bottom was 7.75 ${\mu}{\textrm}{m}$. This results meets the specification for barrier ribs of 50 inch XGA PDP. Forming the glass paste will be followed by using mold in the near future.

• 전자공학회논문지D
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• 제34D권8호
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• pp.8-14
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• 1997

RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2005년도 학술발표회 논문집
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• pp.986-990
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• 2005

본 연구는 입자영상유속계(PIV)와 일차원 프로펠러 유속계를 이용하여 개수로 흐름 외부영역의 연직 유속분포를 측정하고 분석하였다. 수리실험은 크게 두 가지 조건에 대해 수행하였다. 첫 번째는 하상조건에 따른 유속분포의 변화를 파악하였고 두 번째는 흐름특성, 특히 Froude 수의 변화에 따른 유속분포를 파악하였다. 측정 결과 바닥에서부터 최대유속 발생지점까지는 후류법칙과 잘 맞는 경향을 보였으나, 최대 유속발생지점으로부터 수표면까지는 유속이 감소하는 현상이 나타났다. 또한 외부영역의 유속분포는 조도보다 Froude 수의 영향을 많이 받는 것으로 나타났으며 Froude 수가 증가함에 따라 유속감소 현상도 커지는 것을 알 수 있었다. 이에 따라 최대유속과 표면유속의 차와 평균유속과 표면유속의 비가 Froude 수가 증가함에 따라 각각 증가하는 것으로 나타났다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2000년도 추계종합학술대회
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• pp.494-498
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• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.135-136
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• 2004

• Journal of Advanced Marine Engineering and Technology
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• 제24권2호
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• pp.17-23
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• 2000

Experimental investigations were conducted to study the forced convection of fully-developed turbulent flow in horizontal equilateral duct fabricated with the same length and equivalent diameter, but different surface roughness pitch ratio(P/e) of 4, 8 and 16 on the one side wall only. The experiments were performed with the hydraulic diameter based Reynolds number ranged from 70,000 to 10,000. The entire bottom wall of the duct was heated uniformly and the other surfaces were thermally insulated. To understand the mechanisms of the heat transfer enhancement, measurements of the heat transfer were done to investigate the contributive factor of heat transfer promotion, namely, the fin effect. And the results were compared with those of previous investigations for similarly configured channels, at which they were roughened by regularly spaced transverse ribs in the rectangular and circular channels.