• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.177-184
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• 1996

We adopted the $Pt/SiO_{2}/Si$ and the $Ir/SiO_{2}/Si$ substrates of which buffer layer is $PbTiO_{3}$ to improve electrode and interfacial properties of PZT thin film deposited by reactive sputtering method using metal target in this study. We got PZT thin film to have highly oriented(100) structure and good crystallinity using buffer layer in Pt bottom-electrode, though randomly oriented PZT thin film was obtained without buffer layer. Although great improvement of PZT phase formation on Ir bottom-electrode with buffer layer was not observed, we observed the increase of remennant polarization and the decrease of coercive field compared with properties of PZT thin films on the Pt bottom-electrode. So we got the results of the increase of dielectric constant using buffer layer on fabrication of PZT thin film and the better dielectric properties in PZT thin film using Ir bottom-electrode compared with that using Pt bottom-electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.125-125
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• 2011

In this study, we investigated the electrical, optical, structural, and surface properties of indium zinc oxide (IZO)/Ag/IZO multilayer electrode grown by specially designed roll-to-roll sputtering system using the flexible substrate. By the continuous roll-to-roll sputtering of the bottom IZO, Ag, and top IZO layers at room temperature, they were able to fabricate a high quality IZO/Ag/IZO multilayer electrode. At optimized conditions, the bottom IZO layer (40 nm) was deposited on a flexible substrate. After deposition of the Bottom IZO layer, Ag layer was deposited onto the bottom IZO film as a function of DC power (200~500 W). Subsequently, the top IZO layer was deposited onto the Ag layer at identical deposition conditions to the bottom IZO layer (40 nm). We investigated the characteristics of IZO/Ag/IZO multilayer electrode as a function of Ag thickness. It was found that the electrical and optical properties of IZO/Ag/IZO multilayer electrode was mainly affected thickness of the Ag layer at optimized condition. In case of IZO/Ag/IZO multilayer electrode with the Ag power (350W), it exhibited a low sheet resistance of 7.1 ohm/square and a high transparency of 86.4%. Furthermore, we fabricated the touch screen panel using the IZO/Ag/IZO multilayer electrode, which demonstrate the possibility of the IZO/Ag/IZO multilayer electrode grown by roll-to-roll sputtering system as a transparent conducting layer in the touch screen panel.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.368-372
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• 1999

The suggested electrode structure of MOCVD-Pt/sputtered-Ru/polysilicon has an excellent adhesion with increasing annealing temperatures and shows a stable electrode structure up to $600^{\circ}C$. However, the ruthenium used for barrier layer increased the roughness of platinum bottom electrodes because ruthenium diffused through the Pt bottom electrode and reacted with oxygen during the annealing above $700^{\circ}C$. The surface roughness increased the resistivity of Pt bottom electrodes. The resistivity of samples annealed at $600^{\circ}C$ was about $13\mu$Ω.cm. The electrode structure was possible to apply for ferroelectric thin film integration of semiconductor memory devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.68-68
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• 2010

Electroluminescence (EL) characteristics of green-emission ZnS:Cu,Cl-based ac-type inorganic powder electroluminescent structures were examined by inserting carbon nanotubes (CNTs) into or next to the dielectric layer. For the top-emission type EL structure, where the luminescent light was emitted from the top of the structure, was fabricated by assembling in order, a top electrode, an emitting layer, a dielectric layer, and a bottom electrode from the top. $BaTiO_3$ powder mixed with CNTs was used as a dielectric layer or CNTs were deposited between the bottom electrode and $BaTiO_3$ dielectric layer in order to improve the role of the dielectric layer in the structure. Luminance of an EL structure with CNTs inclusion was greatly enhanced possibly due to the high dielectric constant in the dielectric layer of $BaTiO_3$/CNTs, which is one of hot research topics utilizing nano-objects for intensifying dielectric constant and reducing dielectric loss at the same time. A variation on the CNTs themselves and their inclusion methods in the dielectric layer has been exhorted, and the underlying mechanism for the role of CNTs in the EL structure will be explained in the poster. In order to extend the flexibility of EL devices, EL devices were fabricated on the paper substrate and their performance was compared other EL devices on the plastic-based substrate.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.882-885
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• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.322-326
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• 2011

Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by applying the RF power on upper electrode and ion bombardment energy is controlled by applying RF power to the bottom electrode with the Si wafer. In this case, however, etch results often drift due to heating of the electrode during etching process. Therefore, controlling the temperature of the upper electrode is required to obtain improvement of etch repeatability. In this work, we report repeatability improvement during the silicon dioxide etching under extreme process conditions with very high RF power and close gap between upper and bottom electrodes. Under this severe etch condition, it is difficult to obtain reproducible oxide etch results due to drifts in etch rate, critical dimension, profile, and selectivity caused by unexpected problems in the upper electrode. It was found that reproducible etch results of silicon dioxide layer could be obtained by controlling temperature of the upper electrode. Methods of controlling the upper electrode and the correlation with etch repeatability will be discussed in detail.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.6
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• pp.68-74
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• 2011

The touch or step voltages which exist in the vicinity of a grounding electrode are closely related to the earth structure and resistivity and the ground current. The grounding design approach is required to determine the grounding electrode location where the hazardous voltages are minimized. In this paper, in order to propose a method of mitigating the electric shock hazards caused by the ground surface potential rise in the vicinity of a counterpoise, the hazards relevant to touch voltage were evaluated as a function of the soil resistivity ratio $\rho_2/\rho_1$ for several practical values of two-layer earth structures. The touch voltage and current on the ground surface just above the test electrode are calculated with CDEGS program. As a consequence, it was found that burying a grounding electrode in the soil with low resistivity is effective to reduce the electric shock hazards. In the case that the bottom layer soil where a counterpoise is buried has lower resistivity than the upper layer soil, when the upper layer soil resistivity is increased, the surface potential is slightly raised, but the current through the human body is reduced with increasing the upper layer soil resistivity because of the greater contact resistance between the earth surface and the feet. The electric shock hazard in the vicinity of grounding electrodes is closely related to soil structure and resistivity and are reduced with increasing the ration of the upper layer resistivity to the bottom layer resistivity in two-layer soil.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.