• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.15-19
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• 2011

The performance of the DRAM is strongly dependent on the purity and surface roughness of the TIT (TiN/Insulator/ TiN) capacitor electrodes. Hence, in the present study, we evaluate the effects of organic contamination and change of surface roughness on the cylindrical TIT capacitor electrodes during the wet cleaning process by various analytical techniques such as TDMS, AFM, XRD and V-SEM. Once the sacrificial oxide and PR (Photo Resist) are removed by HF, the organic contamination and surface oxide films on the bottom Ti/TiN electrode become visible. With prolonged HF process, the surface roughness of the electrode is increased, whereas the amount of oxidized Ti/TiN is reduced due to the HF chemicals. In the 80nm DRAM device fabrication, the organic contamination of the cylindrical TIT capacitor may cause defects like SBD (Storage node Bridge Defect). The SBD fail bit portion is increased as the surface roughness is increased by HF chemicals reactions.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.47-51
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• 2008

The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1960-1961
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5, Ti0.5)O3/BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour, Structural properties of Pb(Zr0.5,Ti0.5)O3/BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / EaTiO3 multilayered thick films.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.143-144
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• 2005

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.40-41
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• 2006

In this work, we developed the 0-3 type piezoelectric composite to incorporate the advantages of both ceramic and polymer. The PVDF-PZT composites were fabricated with various mixing ratio by 3-roll mi11 mixer. The composite solutions were coated on ITO bottom-electrode deposited on PET (polyethylene terephthalate) polymer film by the conventional screen-printing method. After depositing the top-electrode of silver-paste, 4kV/mm of DC field was applied at $120^{\circ}C$ for 30min to poling the 0-3 composite film. The value of $d_{33}$ was increased as the PZT weight percent was increases. But the $g_{33}$ value showed the maximum at 65 wt% of PZT powder.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1712-1715
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• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.7
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• pp.968-975
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• 2014

This paper proposed a evaluation method for individual's subjective preferred location using EEG and emotional assessment. Visual stimulus were sequentially presented a total six points(the top and the bottom of the left, the top and the bottom of the center and the top and the bottom of the right on the screen). EEG were measured from twenty subjects according to each six points. At the same time, we were executed evaluation of subjects preferred location from emotional assessment. Alpha and beta wave were measured in Fp1, Fp2, F7 and F8 location, followed by ten to twenty electrode system. Correlations and variations of alpha and beta wave from each channel were calculated and analyzed. Because of the number of subjects population under 30, we used Speareman test for a correlation analysis between alpha and beta wave. Also, emotional assessments which compose of visual sense harmony, visual sense stability, stability of position and the visibility were performed and were analyzed by average and frequency. After visual stimulus, emotional assessments were performed. From the variance analysis of EEG, beta wave from F7 was appeared statistically significant as significance probability of 0.006. Also, between alpha wave and beta wave appeared a negative correlation(r=-0.190). From the post-hoc test of F7 beta wave, location 1, 5 and 6 appeared to difference statistically significant. Emotional assessment result according to six positions showed 0.00 significance probability. Thus, location and emotional assessment appeared to influence on each other. From the average and frequency analysis of emotional assessment, location 2 showed obtained of best emotional assessment score and appeared lower beta wave than other locations. Finally, most subjects showed a preference for location 2. Through obtained results in this paper, will be helpful to about human emotional assessment and EEG research.

• Progress in Superconductivity
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• v.10 no.2
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.91-96
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• 2003

Cross-geometrical Cr/Co/Al-Ox/Co/Ni-Fe tunnel junctions were fabricated by magnetron sputtering. To form an insulating layer, The Al layer was oxidized in an atmosphere of oxygen-argon mixture at low power after deposition. To enhance the coercivity of the bottom Co layer, The Cr seed layer was deposited on the glass and it led to increase in coercivity. The coercivity increase is due to the increase of roughness through the Cr thickness. In over oxidation time, the oxidation of Co bottom layer and flat interface of insulator can increase the bottom Co coercivity. But TMR ratio gradually decrease. TMR ratio is relevant with Cr thickness, insulator thickness, and oxidation time. The maximum TMR ratio was 14% at room temperature and the TMR ratio was decreased to half at 0.51 V.