• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.227-232
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• 2004

We investigated a nonvolatile nanomemory element based on boron nitride nanopeapods using molecular dynamics simulations. The studied system was composed of two boron-nitride nanotubes filled Cu electrodes and fully ionized endo-fullerenes. The two boron-nitride nanotubes were placed face to face and the endo-fullerenes came and went between the two boron-nitride nanotubes under alternatively applied force fields. Since the endo-fullerenes encapsulated in the boron-nitride nanotubes hardly escape from the boron-nitride nanotubes, the studied system can be considered to be a nonvolatile memory device. The minimum potential energies of the memory element were found near the fullerenes attached copper electrodes and the activation energy barrier was $3{\cdot}579 eV$. Several switching processes were investigated for external force fields using molecular dynamics simulations. The bit flips were achieved from the external force field of above $3.579 eV/{\AA}$.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.869-876
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• 1990

Hexagonal boron nitride was synthesized from boron oxide and sodium amide in ammonia gas stream. The reaction mechanisms and characteristics of as synthesized boron nitride was investigated by means of TG, DTA, IR, XRD, SEM and PSA. The results are ; 1) hexagonal boron nitride was synthesized from reactions at temperatures above 40$0^{\circ}C$ 2) Sodium metaborate was present as by-product after reaction so that the reaction mechanism is reduced as follows : 2B2O3＋3NaNH2longrightarrowBN＋3NaBO2＋2NH3. 3) boron nitride obtained at the reaction temperature below 40$0^{\circ}C$ is found to have random layer strudcture but the structure transits to ordered layer structure rapidly with increasing reaction temperature, showing separation of (101) differaction line from (10)band in XRD pattern of the reaction product at 50$0^{\circ}C$.

• Corrosion Science and Technology
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• v.21 no.1
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• pp.41-52
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• 2022

Herein, we report polyvinyl butyral composites coatings containing various loadings of 72-h bath sonicated hexagonal boron nitride particles (5 ㎛) to enhance barrier properties of coatings. Barrier properties of coatings were determined in 3.5 wt% NaCl after different time periods of immersion via electrochemical techniques such as open circuit potential, electrochemical impedance spectroscopy, and potentiodynamic polarization test. Coatings containing sonicated hexagonal boron particles exhibited improved corrosion resistance for longer periods of immersion compared to neat coating. We also discussed effects of hexagonal boron nitride on healing properties of polyvinyl butyral. Coatings containing 1.0 wt% loading of sonicated hexagonal boron nitride showed improved long-term barrier properties than coatings with other compositions. The presence of hexagonal boron nitride also affected the healing properties of polyvinyl butyral coatings besides their barrier properties. Such improved barrier properties of composites coatings were attributed to the high aspect ratio, plate-like shape, and electrically insulated nature of the filler.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.344.1-344.1
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• 2016

Recently, graphene has shown great characteristic of electrical conductivity, strength, and elasticity. However, due to edge unstable and metallic properties, it is difficult to use as a semiconductor devices. The solution of such problems has been sought a way to use the boron nitride in a stacked layer structure. By graphene and boron nitride stacked layer structure on silicon substrate, the electron mobility is improved and deteriorated results in semiconductor properties. In this study, to make layered structure, we developed direct synthesis method for graphene on boron nitride. By using Raman technique, the directly stacked layer structure is in good agreement with measurements on each of the attributes.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.832-836
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• 2003

Multi-layer ceramic composites were prepared by tape casting followed by hot pressing using silicon nitride layer with silicon nitride whiskers, silicon nitride layer with silicon carbide particles and boron nitride-alumina layer. The whiskers were aligned during the casting. As the whisker content of the silicon nitride layer was increased up to 10 wt％, the flexural strength of the multi-layer composite was increased. However, further increase of the whisker content in the layer resulted in a rapid decrease of the strength of the composite. The results suggest that the strength of multi-layer ceramic composite showing non-catastrophic failure behavior can be significantly improved by incorporating the aligned whiskers in the layers.

• Journal of the Korean Ceramic Society
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• v.41 no.11
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• pp.812-818
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• 2004

This study has been undertaken with objective of studying the mechanism and condition of formation of hexagonal boron nitride from reduction of boric okide in the presence of carbon under nitrogen atmosphere. It was found that the formation of hexagonal boron nitride was started at 1400$^{\circ}C$ and almost completed its conversion at 1550$^{\circ}C$. The morphology of boron nitride synthesized in this study was very fine and platelet. It was considered as reaction pathway of hexagonal boron nitride that boron oxide was reduced to born and evaporated by activated carbon, and then it was reacted with nitrogen.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.249-256
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• 1997

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

• Prospectives of Industrial Chemistry
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• v.20 no.4
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• pp.1-20
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• 2017

질화붕소나노튜브(BNNT: Boron Nitride Nanotubes)는 근래에 들어 전 세계적으로 많은 주목을 받고 있는 나노신소재이다. CNT와 유사한 기계적 특성과 열전도, 열팽창 특성을 가지고 있지만 동시에 세라믹의 특성도 가지고 있어 열적/화학적 안정에 있어서는 CNT와 비교하여 매우 우수하다. 특히 BNNT를 구성하고 있는 붕소는 열중성자를 흡수할 수 있는 능력이 CNT를 구성하고 있는 탄소와 비교하여 20만 배나 높기 때문에, 우수한 기계적 특성을 이용한 경량화와 방사선 차폐능을 동시에 보유할 수 있는 미래 우주공학 물질로 매우 유용하다. 그러나 제조하는데 상대적으로 많은 에너지가 필요하고, 전 세계적으로 아직 대량생산이 이루어지지 않고 있으며, 제조 시 생성되는 불순물의 양이 많은 것이 단점이다. 또한 BNNT를 정제하는 것은 매우 어려워 산업적 응용은 아직 제한적이라 할 수 있지만, BNNT가 CNT와 세라믹의 특성을 동시에 보유하고 있다는 물질의 우수성과 활발한 연구개발 활동을 감안하면, 이에 대한 해결점을 찾을 수 있을 것으로 예상된다. 본 고찰에서는 다양한 BNNT의 제조방법과 각 방법의 장단점을 소개하고, 현재 연구되고 있는 BNNT의 산업적 응용에 대해 소개할 것이다. 이를 통해 국내에서 매우 미진한 BNNT 관련 연구가 활성화되는 계기가 될 것을 기대한다.

• Tribology and Lubricants
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• v.35 no.6
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• pp.343-349
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• 2019

According to a report in 2011, hexagonal boron nitride demonstrated good solubility in pure water, even without surfactants or organic functionalization. Hexagonal boron nitride nanosheets are an effective lubricant additive, and their solubility in pure water has motivated lubrication engineers to utilize aqueous solutions containing these nanosheets as water-based lubricants. In this study, we measure the width and height of the hexagonal boron nitride nanosheets dispersed in pure water by using the Zetasizer and atomic force microscopy. Without surfactants or functionalization, aqueous solutions containing 0.10, 0.07, 0.05, and 0.01 wt% of hexagonal boron nitride nanosheets are synthesized via sonication-assisted hydrolysis. The Zetasizer provides only a one-dimensional size of approximately 410 nm, regardless of the concentration of the solution. Thus, it does not allow the estimation of the shape of the nanosheet. To acquire the three-dimensional size of the nanosheets, atomic force microscopy is employed. The aqueous solutions containing 0.10, 0.07, 0.05, and 0.01 wt% of the hexagonal boron nitride nanosheets show average values of 740, 450, 700, and 610 nm in width, and 37, 26, 33, and 32 nm in thickness, respectively. No significant trend is observed between the concentration of the solution and size of the nanosheets. Therefore, when preparing a water-based lubricant, it may be appropriate to adjust conditions such as ultrasonication time rather than the concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.590-590
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• 2013

Direct growth of graphene using CVD method has been done on CVD grown boron nitride substrate. From the SEM image, we have shown that the size of grain of graphene could be clearly controlled by varying the amount of injected hydrocarbon. To convince the existence of graphene on boron nitride, XPS and Raman has been checked. Both B1s and N1s peaks in XPS spectra and the Raman peak around 1,370 $cm^{-1}$ demonstrated that boron nitride did remain after high temperature treatment during the graphene growth process. And along the graphene grain boundary, the Raman fingerprint of graphene was neatly appeared.