• Corrosion Science and Technology
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• v.3 no.3
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• pp.112-117
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• 2004

This work investigated the material properties of Ni-P-B alloy electrodeposits obtained from a Ni sulfamate bath as a function of the contents of the P and B sources($H_3PO_3$ and dimethyl amine borane complex(DMAB), respectively) with/without additives. Chemical composition, residual stress, microstructure and micro hardness were investigated using ICP(inductively coupled plasma) mass spectrometer, flexible strip, XRD, TEM and micro Vickers hardness tester, respectively. From the results of the compositional analysis, it was observed that P and B are incorporated competitively during the electrodeposition and the sulfur from the additive is codeposited into the electrodeposit. The measured residual stress value increased in the order of Ni, Ni-P, Ni-B and Ni-P-B electrodeposits indicating that boron affects the residual tensile stress greater than phosphorus. As the contents of the alloying element sources of P and B increased, crystallinity and the grain size of the electrodeposit decreased. The effect of boron on crystallinity and grain size was also relatively larger than the phosphorus. It can be explained that the boron with a smaller atomic radius contributes to the increase of residual stress in the tensile direction and the larger restraining force against the grain growth more significantly than the phosphorus with a larger atomic radius. Introduction of an additive into the bath retarded crystallization and grain growth, which may be attributed to the change of the grain growth kinetics induced by the additive adsorbed on the substrate and electrodeposit surfaces during electrodeposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.388.2-388.2
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• 2014

최근 그래핀 연구와 더불어 2차원 구조의 나노소재에 대한 관심이 급증하면서 육각형의 질화붕소(hexagonal boron nitride; h-BN) 박막(nanosheet) [1]이나 붕소 탄화질화물(boron caronitride; BCN) 박막 [2,3]와 같은 2차원 구조체에 대한 연구가 활발히 진행되고 있다. 그 중 BCN은 반금속(semimetal)인 흑연(graphite)과 절연체인 h-BN이 결합된 박막으로 원소의 구성 비율에 따라 전기적 특성을 제어할 수 있다는 장점이 있다. 따라서 다양한 나노소자로의 응용을 위한 연구가 활발히 진행되고 있다. 본 연구에서는 폴리스틸렌(polystyrene, PS)과 보레인 암모니아(borane ammonia)를 고체 소스로 이용하여 열화학기상증착법을 이용하여 BCN 박막를 SiO2 기판 위에 직접 합성하였다. SEM과 AFM 관측을 통해 합성된 BCN 박막을 확인하였으며, RMS roughness가 0.5~2.6 nm로 매우 낮은 것을 확인하였다. 합성과정에서 PS의 양을 조절하여 BCN 박막의 탄소의 밀도를 성공적으로 제어하였으며, 이에 따라 전기적인 특성이 제어되는 양상을 확인하였다. 또한 합성온도 변화에 따른 BCN 박막의 전기적인 특성이 제어되는 양상을 확인하였다. 추가적으로 같은 방법을 이용하여 BCN 박막을 Ni 위에서 합성하여 SiO2 기판위에 전사 하였다. 합성된 BCN 박막의 구조적 특징과 화학적 조성 및 결합 상태를 투과전자현미경(transmission electron microscopy), X-선 광전자 분광법(X-ray photoelectron spectroscopy)을 통해 조사하였다.

• Journal of the Korean Chemical Society
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• v.54 no.4
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• pp.387-394
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• 2010

The theoretical calculations for $B_nH_n$, $B_nH_{n+1}$, $B_nH_{n+2}$ (n = 3-6) have been considered at the B3LYP level of theory with the 6-311G$^*$ basis set. The optimized geometries, harmonic vibrational frequencies, and binding energies are evaluated to elucidate the thermodynamic stability and spectroscopic properties. The harmonic vibrational frequencies for the molecules considered in this study show all real numbers implying true minima and the binding energies are corrected using zero-point vibrational energies (ZPVE). The binding energies and average energies due to increasing of BH monomer are predicted.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Journal of the Korean Chemical Society
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• v.17 no.4
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• pp.275-285
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• 1973

The addition of one mole of aluminum chloride to three moles of sodium borohydride in tetrahydrofuran gives a turbid solution with enormously more powerful reducing properties than those of sodium borohydride itself. The reducing properties of this reagent were tested with 49 organic compounds which have representative functional groups. Alcohols liberated hydrogen immediately but showed no sign of hydrogenolysis of alkoxy group. Aldehydes and ketones were reduced rapidly within one hr. Acyl derivatives were reduced moderately, however, carboxylic acids were reduced much more slowly. Esters, lactones and epoxides were reduced readily than sodium borohydride or borane. Tertiary amide was reduced slowly, however, primary amide consumed one hydride for hydrogen evolution but reduction was sluggish. Aromatic nitrile was reduced much more readily than aliphatic nitrile. Nitro compounds were inert to this reagent but azo and azoxy groups were slowly attacked. Oxime was reduced slowly but isocyanate was only partially reduced. Disulfide and sulfoxide were attacked slowly but sulfide and sulfone were inert. Olefin was hydroborated rapidly.

• Bulletin of the Korean Chemical Society
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• v.4 no.1
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• pp.3-9
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• 1983

Lithium n-butylborohydride was prepared from borane-dimethylsulfide (BMS) and n-butyllithium, and the approximate rates and stoichiometrics of its reactions with selected organic compounds containing representative functional groups were studied in THF at room temperature. Phenol and benzenetiol liberated hydrogen quickly and quantitatively, and the reactions of primary alcohols, 2,6-di-ter-butylphenol and 1-hexanethiol liberated hydrogen quantitatively within 3 hrs, whereas the reactions of secondary and tertiary alcohols were very slow. Aldehydes and ketones were reduced rapidly and quantitatively to the corresponding alcohols. Cinnamaldehyde utilized 1 equiv. of hydride rapidly, suggesting the reduction to cinnamyl alcohol. Carboxylic acids evolved 1 equiv. of hydrogen rapidly and further reduction was not observed. Anhydrides utilized 2 equiv. of hydride rapidly but further hydride uptake was very slow, showing a half reduction. Acid chlorides were reduced to the alcohol stage very rapidly. All the esters examined were reduced to the corresponding alcohol rapidly. Lactones were also reduced rapidly. Expoxides took up 1 equiv. of hydride at a moderate rate to be reduced to the corresponding alcohols. Nitriles and primary amides were inert to this hydride system, whereas tertiary amide underwent slow reduction. Nitroethane and nitrobenzene were reduced slowly, however azobenzene and azoxybenzene were quite inert. Cyclohexanone oxime evolved 1 equiv. of hydrogen rapidly, but no further reduction was observed. Phenyl isocyanate and pyridine N-oxide were proceeded slowly, showing 1.74 and 1.53 hydride uptake, respectively in 24 hours. Diphenyl disulfide was reduced rapidly, whereas di-n-butyl disulfide, sulfone and sulfonic acids were inert or sluggish. n-Hexyl iodide and benzyl bromide reacted rapidly, but n-octyl bromide, n-octyl chloride, and benzyl chloride reacted very slowly.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.400-401
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• 2012

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.97-105
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• 2012

The effects of pH, types of applied current, agitation method and time, additive on the amount of co-deposited $TiO_2$ particles in the matrix were investigated. The deposition rates increased with increasing pH values, while the volume fraction of $TiO_2$ particles and the size of agglomerated $TiO_2$ particles in the composite decreased. The volume fraction of $TiO_2$ particles in the composite decreased when pulsed current of 50% duty cycle was used. And the size of agglomerated $TiO_2$ particles in the nickel matrix of pulsed current was smaller than that of DC current specimen. The volume fraction of $TiO_2$ particles in the matrix decreased with longer time by air agitation, but in case of using magnetic bar, volume fraction in the same range of time was relatively constant. The volume fraction of the electrodeposited Ni-$TiO_2$ composite in the solution containing 0.01 M Dimethylamine borane (DMAB) increased slightly with increasing agitation time regardless of agitation methods. Thermal stability of the electrodeposited Ni-$TiO_2$ composite increased with lower pH at the temperature range of $200{\sim}800^{\circ}C$, and the results showed that the amount of co-deposited $TiO_2$ relies more on the deposition rate than zetapotential of $TiO_2$ particles.