• Title/Summary/Keyword: Bonding structure

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Quantification for the Distribution of Hydrogen Bonding Species in Phenolic Model Compounds and Polybenzoxazines (페놀계 모델 화합물 및 폴리벤조옥사진 수지에 대한 수소결합분포의 정량화)

  • Kim, Ho-Dong;Moon, Hwa-Yeon
    • Textile Coloration and Finishing
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    • v.20 no.4
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    • pp.21-30
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    • 2008
  • To understand the complex hydrogen bonding structure, several phenolic derivatives and benzoxazine model compounds are synthesized and characterized by Fourier transform infrared spectroscopy (FT-IR). The estimation of molar extinction coefficients for various types of hydrogen bonding species is systematically carried out by the curve-resolving of FT-IR spectra. The distribution of hydrogen bonding species in benzoxazine model dimers is quantitatively analyzed. It is revealed that benzoxazine dimers and BA-a polybenzoxazine are mainly composed of intramolecular interaction rather than intermolecular interaction.

Effects of Stock Characteristics on Paper Bulk

  • Lee, Jin-Ho;Park, Jong-Moon
    • Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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    • 2006.06b
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    • pp.423-426
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    • 2006
  • Paper has fibers and fines network structure and it is strongly affected by interface bonding between fibers. Depending on the inter-fiber bonding, paper bulk is determined. Fines play an important roll in Campbell and consolidation effect through wet pressing and drying operations. Refined Sw-BKP, Hw-BKP and BCTMP fines were used to investigate the fines effect. Wet-web strength, breaking length, scattering coefficient, and hydrodynamic specific volume were measured. According to the result of experiments, chemical and morphological compositions of fines do not strongly affect to wet-web forming, but strongly affect to drying operations which form hydrogen bonding among fiber-fines-fiber matrixes. Paper bulk should be controlled by the extent of hydrogen bonding between fibers during drying operations.

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Strength Evaluation of Adhesive Bonded Joint for Light Weight Structure by Single-Lab Joint Test (단면 겹치기 이음 시험에 의한 경량구조물용 접착 이음강도의 평가)

  • 이강용;김준범;최홍섭;우형표
    • Transactions of the Korean Society of Automotive Engineers
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    • v.5 no.2
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    • pp.87-93
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    • 1997
  • The bonding strength evaluation of light weight materials for electrical vehicle applications has been performed through single lap joint tests in which the design parameters such as fillet, joint style, adherend, bonding overlap length,bonding thickness, and environmental condition(soaking time in $25^{\circ}C$ water) are considered. It is experimentally oberved that lap shear strength of joint increases for higher fillet height, longer overlap length, and thinner bonding layer thickness. Al-Al adherend combination shows much higher lap shear strength than AL-FRP and FRP-FRP adherend combinations. Riveting at adhesive bonded joint of AL-AL adherend combination makes lap shear strength decrease. Effect of soaking time on lap shear strength is negligible.

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New Structure of Rigid Spacers for Tight Bonding of Two Plastic Substrates in Plastic LCD

  • Choi, Hong;Jang, Se-Jin;Bae, Ji-Hong;Choi, Yoon-Seuk;Kim, Sang-Il;Shin, Sung-Sik;Kim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.352-355
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    • 2007
  • We have developed tight bonding of plastic LCD with new rigid spacer. For tight bonding of two plastic substrates, we designed structures to collect UV or thermal epoxy placed on the top of rigid spacer spontaneously by capillary effect. We confirmed that tight bonded plastic LCD has a good adhesion without induced defects and a high mechanical stability against the various external deformations. This method can be applicable to the fabrication of large plastic LCDs using stamping process.

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Si Micromachining for MEMS-lR Sensor Application (결정의존성 식각/기판접합을 이용한 MEMS용 구조물의 제작)

  • 박흥우;주병권;박윤권;박정호;김철주;염상섭;서상의;오명환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.411-414
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    • 1998
  • In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

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Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film (SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성)

  • 유연혁;최두진
    • Journal of the Korean Ceramic Society
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    • v.36 no.8
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    • pp.863-870
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    • 1999
  • SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

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Development of Automatic Bonding System for GaAs Wafer (GaAs Wafer 접합용 본딩시스템 개발)

  • Song J.Y.;Kang J.H.;Lee C.W.;Ha T.H.;Jee W.H.;Kim W.K.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.427-431
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    • 2005
  • In this study, 6' GaAs wafer bonding system is designed and optimized to bond 6 inches device wafer and material wafer. Bonding process is performed in vacuum environment and resin is used to bond two wafers. Vacuum module and double heating mechanisms are adopted to minimize wafer warpage and void. Structure and heat transfer analysis, et al of the core modules review the designed mechanisms are very effective in performance improvement. As a result, high productivity (tack time cut-down) and stabilized process can be obtained by reducing breakage failure of wafer.

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Structure and Bonding of Perovskites A($Cu_{1/3}Nb_{2/3}$)$O_3$ (A=Sr, Ba and Pb) and their Series of Mixed Perovskites

  • Park Hyu-Bum;Huh Hwang;Kim Si-Joong
    • Bulletin of the Korean Chemical Society
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    • v.13 no.2
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    • pp.122-127
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    • 1992
  • Some perovskites $A($Cu_{1}3}Nb_{2}3}$)O_3(A=$Sr^{2+}$$, $Ba^{2+}$ and $Pb^{2+}$) and their series of mixed perovskites have been prepared by solid state reaction. Single perovskite phase was obtained in Sr or Ba rich samples, but pyrochlore phase was found in Pb rich samples. The stability of perovskite phase is dependent on the ionicity of bonding as well as the tolerance factor. All the obtained perovskites have tetragonal symmetry distorted by Jahn-Teller effect of $Cu^{2+}$. In the case of $Sr(Cu_{1}3}Nb_{2}3})O_3$, some superlattice lines caused by threefold enlarging of fundamental unit cell were observed. And, the symmetry of B site octahedron and the bonding character of B-O bond have been studied by IR, ESR and diffuse reflection spectroscopy. It appeared that the symmetry and the bonding character are influenced by such factors as the size and the basicity of A cation.

Wafer-level Vacuum Packaging of a MEMS Resonator using the Three-layer Bonding Technique (3중 접합 공정에 의한 MEMS 공진기의 웨이퍼레벨 진공 패키징)

  • Yang, Chung Mo;Kim, Hee Yeoun;Park, Jong Cheol;Na, Ye Eun;Kim, Tae Hyun;Noh, Kil Son;Sim, Gap Seop;Kim, Ki Hoon
    • Journal of Sensor Science and Technology
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    • v.29 no.5
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    • pp.354-359
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    • 2020
  • The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

Investigation of Maximum Strength and Effective Bonding Length at the Interface Between Structure and GFRP Material Under Freeze-thaw Cycles and Applied Different Bonding Materials (동결융해 및 부착재료 변화에 따른 GFRP-구조물 경계면의 최대 부착강도 및 유효부착길이 평가)

  • Choi, Hyun Kyu;Jung, Woo Young;Ahn, Mi Kyoung
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.15 no.2
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    • pp.107-115
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    • 2011
  • This research studies the behavior of the FRP-concrete interface subjected to two environmental substances. Frist is to investigate the behavior by the application of different bonding materials at the interface between FRP and concrete, second is to understand a long-term performance at the interface by Freeze-thaw actions. The parameters considered in this research are the maximum bonding strength and the effective bonding length at the FRP-concrete interface. In the first experimental phase, three types of specimens are fabricated and tested considering the number of applied bonding materials and the Freeze-thaw tests are performed to evaluate the behavior of the interface in the cycle range of 0 to 300 cycles. Finally, it is known that there is a 5~7% difference of the effective bonding length between applied bonding materials and the values for the maximum stress and the effective length under Freeze-thaw action are varied randomly as the freeze-thaw cycle is increased even though initial reduction of their capacities are occurred.