• Title/Summary/Keyword: Bonding pressure

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High Pressure Effect of Vibration in a Hydrogen Bonding Crystal :$NH_4I$ (수소결합을 가진 결정내의 진동의 고압효과 : $NH_4I$)

  • Jeon Seung-Joon
    • Journal of the Korean Chemical Society
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    • v.36 no.5
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    • pp.627-631
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    • 1992
  • A simple one dimensional model was proposed to describe a hydrogen bonding in crystals, which was based on the Lippincott's empirical potential. The model was used to calculate internal stretching vibrational frequencies of $NH_4I$ crystal at high pressures. The calculated results were in agreement with Raman experimental results qualitatively. At relatively lower high pressures, as pressure increases internal stretching vibrational frequencies shift lower due to increase of the hydrogen bonding effect. At higher pressures, the frequencies shift higher due to the repulsive contribution of interatomic potential induced by the reduction of interatomic distance as pressure increases.

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Study on Electrically Assisted Pressure Solid State Joining Between Aluminum Alloys (통전압접을 활용한 알루미늄 소재 간 고상접합에 관한 연구)

  • Choi, H.;Lee, S.;Kim, Y.;Hong, S.T;Han, H.N.
    • Transactions of Materials Processing
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    • v.31 no.6
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    • pp.337-343
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    • 2022
  • Electrically assisted pressure joining (EAPJ) utilizes electric current-induced kinetic enhancement to achieve solid state diffusion bonding within a short time. In this study, aluminum alloy specimens, which are known as a hard-to-weld metal, were successfully solid-state joined through EAPJ. The bonding process was performed in two ways: continuous direct current (CDC), which applies relatively low current density, and pulsed direct current (PDC), which applies high current density. It was observed that the bonding strength was higher in PDC than in CDC. The microstructure of the joint was characterized using 3D X-ray microscopy (XRM) and electron backscatter diffraction (EBSD).

Direct Bonding of 3C-SiC Wafer for MEMS in Hash Environments (극한 환경 MEMS용 3C-SiC기판의 직접접합)

  • Chung, Yun-Sik;Lee, Jong-Chun;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.2020-2022
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    • 2002
  • SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS fileds because of its application possibility in harsh environements. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The PECVD oxide was characterized by XPS and AFM, respectively. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$cm^2{\sim}$ Max : 15.5 kgf/$cm^2$).

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Effects of welding parameters on ultrasonic bonding strength of solar collector (태양열집열판의 초음파 심용접 시 접합부 강도에 미치는 공정변수의 영향)

  • Lee Jeong-Han;Kim Suk-Hwan;Cheon Chang-Geun;Kim Seong-Uk;Kim Jong-Do
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.233-235
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    • 2006
  • This study was performed to find the best bonding conditions by comparing mechanical properties in solar collector. The solar collector that consists of copper plate and tube was successfully bonding by ultrasonic seam welding. In this experiment, we varied the values of welding pressure and welding amplitude and fixed the values of speed and frequency. Consequently, it was find that the welding pressure had higher effort on bonding strength than the welding amplitude.

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MICRO-SHEAR BOND STRENGTH TO DENTIN UNDER SIMULATED PULPAL PRESSURE (치수압이 상아질 접착제의 미세전단 결합강도에 미치는 영향에 관한 In vitro 연구)

  • Song, Yun-Jung;Park, Sung-Ho
    • Restorative Dentistry and Endodontics
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    • v.29 no.4
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    • pp.339-345
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    • 2004
  • The aim of this study was to measure and compare the micro shear bond strengths of the following dentin bonding systems to the dentin surfaces under simulated pulpal pressure: All Bond $2^{\circledR},{\;}Second^{\circledR},{\;}AdheSE^{\circledR}$, Adper Prompt $L-Pop^{\circledR}$. The occlusal surfaces of 180 extracted human molars were prepared so the dentin bonding surfaces could be exposed. The teeth were randomly assigned to 3 equal groups of 60 each and subdivided. The dentin surfaces were treated with the above mentioned bonding system and resin composite cylinders were built up under a simulated pulpal pressure when saline (Group II) or diluted bovine serum (Group III) was used as the pulpal fluid. As a control. the same procedures were performed in the dried dentin surfaces (Group I). After one day of storage in water. the micro shear bond strengths were measured using an EZ tester. Group II and III showed significantly lower shear bond strength than Group I statistically (p < 0.05). $SEbond^{\circledR}{\;}and{\;}AdheSE^{\circledR}$ showed no difference among the different dentin condition. In the Adper Prompt $L-Pop^{\circledR}$. a simulated pulpal pressure were applied to the specimens using diluted bovine serum. which showed a higher strength than the specimens in which saline was used (p < 0.05).

A study on the bonding strength of co-cured T800/epoxy composite-aluminum single lap joint according to the forming and additional pressures (동시 경화법으로 제조된 T800/에폭시 복합재료-알루미늄 단면겹치기조인트의 성형압력 및 부가압력에 따른 접착강도에 관한 연구)

  • Son, Dae-Sung;Bae, Ji-Hun;Chang, Seung-Hwan
    • Composites Research
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    • v.24 no.5
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    • pp.23-28
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    • 2011
  • In this paper, the bonding strengths of co-cured T800 carbon/epoxy composite-aluminum single lap joints with and without additional pressures were investigated using the pressure information induced by the fiber tension during a filament winding process. The specimens of all the tests were fabricated by an autoclave vacuum bag de-gassing molding being controlled forming pressures (absolute pressures of 0.1MPa, 0.3MPa and 0.7MPa including vacuum). A special device which can act uniform additional pressures on the joining part of the single lap joint specimen was designed to measure the bonding strengths of composite-aluminum liners of type III hydrogen pressure vessel fabricated by a filament winding process. After the three different additional pressures (absolute pressures of 0.1MPa, 0.3MPa and 0.7MPa) were applied to the specimens the effect of the additional pressures on the bonding strengths of the co-cured single-lap joints were evaluated.

A Semi-solid Bonding between Rolled Steel for Structural Parts and Lead Bronze Alloy (구조용 압연강재와 연청동 합금의 반용융 확산접합)

  • 김우열;박홍일;이길근;서원찬
    • Journal of Welding and Joining
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    • v.18 no.1
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    • pp.70-76
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    • 2000
  • A rolled steel for structural parts and lead bronze alloy were bonded each other by a new semi-solid diffusion bonding process to investigate the effect of the process parameters, for example bonding temperature and bonding time, on the interface characteristics, and bonding behavior. It can be possible that manufacture of the bonded steel/lead bronze which has a cylindrical shape with inserted the lead bronze alloy into the steel ring by the diffusion bonding process under the semi-solid condition of the lead bronze alloy without any pressure and flux. It has been know that the control of the amount of the liquid phase in semi-solid lead bronze alloy was very important to obtain soundness interface, since the shear strength of the bonded steel/lead bronze at 850℃ for 60 minutes under the condition of about 40% of the liquid phase in the lead bronze alloy shows maximum value, 210 MPa. The shear strength increases with an increase in bonding time and show maximum value, and then decreases.

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A Study on Si-wafer direct bonding for high pre-bonding strength (큰 초기접합력을 갖는 Si기판 직접접합에 관한 연구)

  • 정연식;김재민;류지구;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.447-450
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    • 2001
  • Abstract-Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera, respectively. Components existed in the interlayer were analysed by using FT-lR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/cm$^2$∼Max : 14.9kgf/cm$^2$).

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A Study on the Metal-Glass Bonding Using Ultrasonic (초음파를 이용한 금속-유리 접합에 관한 연구)

  • Jeong, An-Mok;Jeon, Euy-Sik;Kim, Cheol-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.2
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    • pp.103-108
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    • 2011
  • Ultrasonic welding is widely used in bonding of the same kind or dissimilar materials. The important variable of ultrasonic bonding is the bonding pressure, bonding time and applied amplitude energy. These variables have to be optimized in order to obtain the optimum bonding results. In this research, the important factor to optimal bonding between metal and glass were experimentally investigated by applying design of experiment.

Wafer-level Vacuum Packaging of a MEMS Resonator using the Three-layer Bonding Technique (3중 접합 공정에 의한 MEMS 공진기의 웨이퍼레벨 진공 패키징)

  • Yang, Chung Mo;Kim, Hee Yeoun;Park, Jong Cheol;Na, Ye Eun;Kim, Tae Hyun;Noh, Kil Son;Sim, Gap Seop;Kim, Ki Hoon
    • Journal of Sensor Science and Technology
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    • v.29 no.5
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    • pp.354-359
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    • 2020
  • The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.