• 제목/요약/키워드: Bonding pressure

검색결과 392건 처리시간 0.028초

경화공정 및 수분흡수에 따른 복합재료 하니콤 샌드위치 판넬의 접합강도특성 연구 (Bondline Strength Evaluation of Honeycomb Sandwich Panel For Cure Process and Moisture Absorption)

  • 최흥섭;전흥재;남재도
    • 대한기계학회논문집A
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    • 제25권1호
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    • pp.115-126
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    • 2001
  • In this paper, through a series of comparative experiments, effects of two different cure processing methods, cocure and precure, on the mechanical properties of honeycomb core materials for aircraft applications are considered. Mass of moisture accumulated into the closed cells of the sandwich panel specimen from the measured mass of moisture diffused to the full saturation state into the elements(skin, adhesive layer, Nomex honeycomb), consisting the honeycomb sandwich specimen has been calculated. Water reservoir of 70$\^{C}$ was used to have specimens absorb moisture to see the influence of moisture absorbed into sandwich panel on its mechanical properties. For the repair condition holding for 2 hours at 177$\^{C}$(350℉) temperature, a pressure due to the vapor expansion in each cell of the sandwich panel, which may result in the local separation of the interface between laminated skin and the surface of the honeycomb, has been estimated by vapor pressure-temperature relation from the thermodynamic steam table and compared to the pressure from the ideal gas state equation. The bonding strengths of the laminated skins on the flat surface of the Nomex honeycomb have been compared by the flatwise tension test and climbing drum peel test performed at room temperature for dry, wet and wet-repair specimens, respectively.

Silica를 함유하는 Polyurethane dispersion 투습방수 Film의 제조 (Fabrication of Silica-Containing Breathable Waterproof Polyurethane Dispersion Film)

  • 신현기;허만우;윤남식
    • 한국염색가공학회지
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    • 제27권2호
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    • pp.126-131
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    • 2015
  • Silica-polyurethane hybrid breathable films were prepared and their breathabilities were assessed. Appropriately aggregated silica was prepared through sol-gel reaction of water glass and its particle size ranged 360~500nm. The polyurethane dispersion was prepared by the reaction of isophorone diisocyanate(IPDI) as diisocyanate and polytetramethylene glycol(PTMG) and dimethylol propionic acid(DMPA) as polyol, particle size ranging 30~120nm. The reaction between isocyanate and hydroxyl group to form urethane bonding was checked by the intensity of the stretch peak of isocyanate at $2270cm^{-1}$ in the FT-IR. The silica was incorporated into polyurethane dispersion and casted into film. It was shown that the incorporated silica(1~5wt.%) increased water vapour permeability of the films by 30~100%, and decreased the hydrostatic pressure by 10~40%. From the results, it could be concluded that the appropriate hybridization of silica can increase the breathability of polyurethane dispersion film, while minimizing the loss of hydrostatic pressure.

혼합 모드(I/II) 하중에 의한 SA533B 압력용기강의 연성파괴 특성에 관한 연구 (Ductile Fracture Behaviour of SA 533B Pressure Vessel Steel Under Mixed Mode (I/II) Loading)

  • 오동준
    • 대한기계학회논문집A
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    • 제25권11호
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    • pp.1829-1834
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    • 2001
  • The aim of this study is to investigate the ductile fracture behavior under mixed mode (I/II) loading using SA533B pressure vessel steel. Anti-symmetric 4-point (AS4P) bonding tests were performed to obtain the J-R curves under two different mixed mode (I/II) loadings. In addition, the fractographic examination of fracture surfaces was carried out to compare with those of pure Mode I and Mode II. In conclusions, the J-R curves under Mixed Mode (I/II) loading were located between those of Mode I and Mode II loadings. When the mixture ratio of mixed mode (I/II) loading was high, the J-R currie of mixed mode (I/II) loading approached that of pure mode I loading after some amount of crack propagation. In contrast with the above fact, if the mixture ratio was low, the J-R curve looked after that of pure mode II loading. The fractographic evidences such as the shape of dimples under different loading conditions supported these conclusions.

태양전지 CIGS용 Mo 후면전극의 전기 저항에 관한 연구 (The Study on the Electrical Resistivity for Mo Back Contacts Film of CIGS Solar Cell)

  • 김강삼;조용기
    • 한국표면공학회지
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    • 제44권6호
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    • pp.264-268
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    • 2011
  • The Molybedenium thin film is generally used on back contact material of CIGS solar cell due to low electrical resistivity and stable thermal expansion coefficient. The Mo thin films deposited on si wafer by the magnetron sputtering method. The research focused on the variation of electrical resistivity of films which deposited with various working pressure at the target power of 2.0 kW(8.4 W/). The lowest resistivity of Mo thin film showed $9.0{\mu}O$-cm at pressure of 1.5 mTorr. However, working pressure increasing up to 50 mTorr, resistivities were highly increased. The results showed that the conductivity of Mo films depended on growing structures and defects in deposition process. Surface morphology, porosity, grain size, oxidation, and bonding structures were analysed by SEM, AFM, spectroscopic ellipsometry (SE), XRD, and XPS.

산화그래핀을 적용한 고반응성 Al/CuO 나노복합재 제조 및 분석 (Fabrication and Characterization of Highly Reactive Al/CuO Nano-composite using Graphene Oxide)

  • 임예슬
    • 한국분말재료학회지
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    • 제26권3호
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    • pp.220-224
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    • 2019
  • The aluminum (Al)/copper oxide (CuO) complex is known as the most promising material for thermite reactions, releasing a high heat and pressure through ignition or thermal heating. To improve the reaction rate and wettability for handling safety, nanosized primary particles are applied on Al/CuO composite for energetic materials in explosives or propellants. Herein, graphene oxide (GO) is adopted for the Al/CuO composites as the functional supporting materials, preventing a phase-separation between solvent and composites, leading to a significantly enhanced reactivity. The characterizations of Al/CuO decorated on GO(Al/CuO/GO) are performed through scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping analysis. Moreover, the functional bridging between Al/CuO and GO is suggested by identifying the chemical bonding with GO in X-ray photoelectron spectroscopy analysis. The reactivity of Al/CuO/GO composites is evaluated by comparing the maximum pressure and rate of the pressure increase of Al/CuO and Al/CuO/GO. The composites with a specific concentration of GO (10 wt%) demonstrate a well-dispersed mixture in hexane solution without phase separation.

대기압 아르곤 플라즈마 처리를 통한 IGZO TFT의 전기적 특성 향상 연구 (High Performance InGaZnO Thin Film Transistor by Atmospheric Pressure Ar Plasma Treatment)

  • 정병준;정준교;박정현;김유정;이희덕;최호석;이가원
    • 반도체디스플레이기술학회지
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    • 제16권4호
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    • pp.59-62
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    • 2017
  • In this paper, atmospheric pressure plasma treatment was proposed for high performance indium gallium zinc oxide thin film transistor (IGZO TFT). RF Ar plasma treatment is performed at room temperature under atmospheric pressure as a simple and cost effective channel surface treatment method. The experimental results show that field effect mobility can be enhanced by $2.51cm^2/V{\cdot}s$ from $1.69cm^2/V{\cdot}s$ to $4.20cm^2/V{\cdot}s$ compared with a conventional device without plasma treatment. From X-ray photoelectron spectroscopy (XPS) analysis, the increase of oxygen vacancies and decrease of metal-oxide bonding are observed, which suggests that the suggested atmospheric Ar plasma treatment is a cost-effective useful process method to control the IGZO TFT performance.

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Development of Semiconductor Packaging Technology using Dicing Die Attach Film

  • Keunhoi, Kim;Kyoung Min, Kim;Tae Hyun, Kim;Yeeun, Na
    • 센서학회지
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    • 제31권6호
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    • pp.361-365
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    • 2022
  • Advanced packaging demands are driven by the need for dense integration systems. Consequently, stacked packaging technology has been proposed instead of reducing the ultra-fine patterns to secure economic feasibility. This study proposed an effective packaging process technology for semiconductor devices using a 9-inch dicing die attach film (DDAF), wherein the die attach and dicing films were combined. The process involved three steps: tape lamination, dicing, and bonding. Following the grinding of a silicon wafer, the tape lamination process was conducted, and the DDAF was arranged. Subsequently, a silicon wafer attached to the DDAF was separated into dies employing a blade dicing process with a two-step cut. Thereafter, one separated die was bonded with the other die as a substrate at 130 ℃ for 2 s under a pressure of 2 kgf and the chip was hardened at 120 ℃ for 30 min under a pressure of 10 kPa to remove air bubbles within the DAF. Finally, a curing process was conducted at 175 ℃ for 2 h at atmospheric pressure. Upon completing the manufacturing processes, external inspections, cross-sectional analyses, and thermal stability evaluations were conducted to confirm the optimality of the proposed technology for application of the DDAF. In particular, the shear strength test was evaluated to obtain an average of 9,905 Pa from 17 samples. Consequently, a 3D integration packaging process using DDAF is expected to be utilized as an advanced packaging technology with high reliability.

90 MPa의 수소 압력에 의한 HDPE의 수소 열화 연구 (A Study on the Hydrogen Degradation of HDPE by Hydrogen Pressure of 90 MPa)

  • 김민아;이창훈
    • 한국수소및신에너지학회논문집
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    • 제34권3호
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    • pp.307-315
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    • 2023
  • The physical and chemical changes exhibited by high density polyethylene (HDPE) after treatment with hydrogen at a pressure of 90 MPa followed by rapid release of the hydrogen were studied. X-ray diffraction, differential scanning calorimetry, thermo gravimetric analysis, and attenuated total reflectance (ATR)-fourier transform infrared (FTIR) were used for this purpose. As a result, it was found that the degree of crystallinity of HDPE decreased after hydrogen pressure treatment, while the average thickness of lamellae that constitute the crystals and the melting temperature of the crystalline region actually increased. The decomposition temperature also increased by about 3℃. In addition, it was found that the hydrogen bonding network between -OH groups in the HDPE sample was strengthened and partial chain scission occurred. These cut chains were found to be terminated by oxidative degradation such as cross-linking between chains, -C=O, -C-O, and -CHO, or by the formation of -CH3 at the chain ends, as confirmed by ATR-FTIR.

생체 이식형 의료기기의 패키징을 위한 완전 밀폐 방법에 관한 연구 (A Study on the Hermetic Method for Packaging of Implantable Medical Device)

  • 박재순;김성일;김응보;강영환;조성환;정연호
    • 한국전기전자재료학회논문지
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    • 제30권7호
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    • pp.407-412
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    • 2017
  • This paper introduces a biocompatible packaging system for implantable medical device having a hermetic sealing, such that a perfect physical and chemical isolation between electronic medical system and human body (including tissue, body fluids, etc.) is obtained. The hermetic packaging includes an electronic MEMS pressure sensor, power charging system, and bluetooth communication system to wirelessly measure variation of capacitance. The packaging was acquired by Quartz direct bonding and $CO_2$ laser welding, with a size of width $ 6cm{\times}length\;10cm{\times}lheight\;3cm$. Hermetic sealing of the packaged system was tested by changing the pressure in a hermetic chamber using a precision pressure controller, from atmospheric to 900 mmHg. We found that the packaged system retained the same count or capacitance values with sensor 1 - 25,500, sensor 2 - 26,000, and sensor 3 - 20,800, at atmospheric as well as 900 mmHg pressure for 5 hours. This result shows that the packaging method has perfect hermetic sealing in any environment of the human body pressure.

저 압력 측정을 위한 실리콘 용량형 압력센서 (Silicon Capacitive Pressure Sensor for Low Pressure Measurements)

  • 서희돈;이윤희;박종대;최세곤
    • 센서학회지
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    • 제2권1호
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    • pp.19-27
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    • 1993
  • 본 논문은 $n^{+}$ 에피택셜층을 이용한 전기화학 에칭스톱과 글라스-실리콘의 양극 접합기술을 이용하여 저 압력측정을 위한 용량형 압력센서를 제작한 것이다. 제작된 센서는 하이브리드형으로 센서 커패시터와 기준 커패시터를 갖는 센서 칩과 두가지 출력검출회로 칩으로 구성되어 있다. 이 제작된 센서는 다이아프램 크기가 $1.0{\times}1.0 mm^{2}$이고, 두께가 $10{\mu}m$로 제작된 센서는 압력이 인가되지 않을 때 용량의 크기가 7.1 pF이고, 10 KPa 압력에서 감도가 5.2 %F.S.이다. 또 용량을 전압으로 검출하는 컨버터회로를 이용할 경우, $5{\sim}45^{\circ}C$ 온도범위에서 영점 온도특성과 감도 온도특성은 각각 0.051 %F.S./$^{\circ}C$와 0.12 %F.S./$^{\circ}C$ 이다.

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