• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.

• 한국재료학회지
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• 제26권10호
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• pp.542-548
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• 2016

The influence of NiCrAlY bond coating on the adhesion properties of an Fe thermal coating sprayed on an Al substrate was investigated. By applying a bond coat, an adhesion strength of 21MPa was obtained, which was higher than the 15.5MPa strength of the coating without the bond coat. Formation of cracks at the interface of the bond coat and the Al substrate was suppressed by applying the bond coat. Microstructural analysis of the coating interface using EBSD and TEM indicated that the dominant bonding mechanism was mechanical interlocking. Mechanical interlocking without crack defects in the coating interface may improve the adhesion strength of the coating. In conclusion, the use of an NiCrAlY bond coat is an effective method of improving the adhesion properties of thermal sprayed Fe coatings on Al substrates.

• 한국결정성장학회지
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• 제6권2호
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• pp.203-212
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• 1996

본 연구에서는 탄소/탄소 복합체의 내산화성을 증진시키기 위하여 CVD법에 의한 SiC 코팅과 PCS 함침법을 응용하여 실험을 행하였다. 전자현미경으로 시편의 미세구조를 관찰 한 결과 CVD법에 의해서는 표면에 SiC가 고르게 증착되었으며, 함침법에 의해서는 각 탄소 섬유의 표면에 PCS가 wetting된 후 SiC로의 전이가 잘 일어났음을 확인하였고, 이로 인하여 각 섬유들의 결합력을 증대시키고 기계적물성에 증진을 가져왔음을 확인하였다. PCS 함침된 탄소/탄소 복합체 시편은 함침되지 않은 시편에 비해 밀도는 25 %, 곡강도 값은 3.5배, 내산화성은 2.8배가 증가하는 현격한 기계적 물성이 증가함을 보였다. 이러한 증가는 CVD법에 의해 코팅된 탄소/탄소 복합체 사편보다도 우수한 기계적 성질을 나타내였다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2004년도 춘계학술발표회
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• pp.203-210
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• 2004

Consolidation properties were analysed by means of depositional environments. Depositional environments including geochemical properties, porewater chemistry, sediment structures, particle size distributions and carbon age dating were analysed using undisturbed samples retrieved successively from a boring hole in the study area. Laboratory oedometer tests and anisotropic consolidated triaxial tests(CKoUC) were performed to examine the overconsolidation phenomenons. Based on the carbon age dating results and profiles of geochemical properties, porewater chemistry, salinity and pH, it was founded that the upper silt/clay complex layer was deposited under marine condition while sand and clay layers were deposited under fluvial condition. Planar laminated structures of silts and clays were dominant in marine deposits. Although there was no clear evidences that geological erosion had been occurred in marine deposits, overconsolidation ratio obtained from oedometer tests were greater than unity. Stress paths of samples behaved similar to those of normally consolidated clays. Data plotted in stress state charts proposed by Burland(1990) and Chandler(2000) showed that the marine deposits were geologically normally consolidated. These apparent overconsolidations can be explained by the fabric and chemical bonding due to the difference of the rate of deposition.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• 대한치과보철학회지
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• 제41권1호
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• pp.89-98
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• 2003

Titanium requires special ceramic system for veneering. Low fusing dental ceramics with coefficients of thermal expansion matching that of titanium have been developed. The purpose of this study was determine the bond strengths between cast and noncast pure titanium and two commercial titanium porcelains, and to compare the results with a conventional nickel-chromium alloy-ceramic system. The bond strengths were determined using a 3-point flexure test. Three-point flexure specimens $25{\times}3{\times}0.5mm$ were prepared After removal of ${\alpha}-case$ layer, they were veneered with $8{\times}3{\times}1mm$ of ceramics at the center of the bar. Specimens were tested in a universal testing machine. Within the limits of this study, the following conclusions were drawn: 1. The bond strengths between pure titanium and two commercial porcelains exceeded th lower limit of the bonding strength value in ISO 9693(25MPa). 2. There was no significant difference between cast and noncast titanium-porcelain bonds. 3. There was no significant difference between two commercial titanium porcelains. 4. The bond strengths of the titanium-porcelain systems ranged from 73% to 79% of that of the Ni-Cr-conventional porcelain system.