• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Proceedings of the Korean Fiber Society Conference
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• 1995.10a
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• pp.52-54
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• 1995

• Steel and Composite Structures
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• v.20 no.4
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• pp.833-849
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• 2016

Pre-stressing of existing structures using steel cables, FRP cables or FRP laminates has been successfully tried in the past. Retrofitting of beams using pre-stressed laminates does not utilize the full strength of the FRP due to de-bonding of the laminates before the fibre fracture. In the present study attempt has been made to overcome this problem by replacing the FRP laminates by the FRP sheets. In the present paper the effect of initial damage level and pre-stress level on strength, stiffness, cracking behaviour and failure mode of girders retrofitted using pre-stressed CFRP sheets has been studied. The results indicate that rehabilitation of initially damaged girders by bonding pre-stressed CFRP sheets improves the flexural behaviour of beams appreciably. However, it has been observed that with increase in pre-stressing force the load carrying capacity of the girders increases up to a particular level up to which the mode of failure is fibre fracture. Thereafter, the mode of failure shifts from fibre fracture to de-bonding and there is no appreciable increase in load carrying capacity with further increase in pre-stressing force.

• Journal of Powder Materials
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• v.24 no.3
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• pp.248-253
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• 2017

In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.303-304
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• 2005

In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

• International Journal of Naval Architecture and Ocean Engineering
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• v.13 no.1
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• pp.136-146
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• 2021

This paper aims to numerically estimate the dynamic ice load on a conical structure. The Discrete Element Method (DEM) is employed to model the level ice as the assembly of numerous spherical particles. To mimic the realistic fracture mechanism of ice, the parallel bonding method is introduced. Cases with four different ice drifting velocities are considered in time domain. For validation, the statistics of time-varying ice forces and their frequencies obtained by numerical simulations are extensively compared against the physical model-test results. Ice properties are directly adopted from the targeted experimental test set up. The additional parameters for DEM simulations are systematically determined by a numerical three-point bending test. The findings reveal that the numerical simulation estimates the dynamic ice force in a reasonably acceptable range and its results agree well with experimental data.

• YAKHAK HOEJI
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• v.42 no.3
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• pp.290-295
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• 1998

To optimize the formulation of acetaminophen liquid suppository, the effect of additives on the physicochemical properties of liquid suppository base was investigated. The physi cochemical properties of P 407/P 188 (15/15%) (abbreviated in 15/15) and P 407/P l88 (15/20%) (abbreviated in 15/20) were measured after the addition of following additives; 2.5% acetaminophen as an active ingredient, vehicle components (5% ethanol, 5% propylene glycol, 5% glycerin), preservatives (0.1% sodium benzoate, 0,1% methylparahydroxybenzoate, 0.1% propylparahydroxybenzoate) and 1% of sodium chloride as an ionic strength controlling agent. Poloxamer gel was prepared with three different buffer solutions (pH 1.2, 4.0 and 6.8) and the physicochemical properties, gelation temperature, gel strength and bioadhesive force, were determined. In the results, the effect of additives on the physicochemical properties was dependent on their bonding capacities including hydrogen bonding and cross-linking bonding. Because the hydrogen-bonding capacities of acetaminophen, ethanol and propylene glycol were smaller than that of poloxamer, the binding force of poloxamer gel became weak by their putting in between poloxamer gel. Therefore, the gelation temperature (15/15, $35.7^{\circ}C$ vs 37.0, 39.4 $38.2^{\circ}C$; 15/20, $29.2^{\circ}C$ vs 31.2, 32.0, $30.3^{\circ}C$) increased, and gel strength (15/15, 4.03 see vs 2.72, 2.08, 3.12sec; 15/20, 300g vs 50, 50, 200g) and bioadhesive force (15/15, $6.8{\times}10^2\;dyne/cm^2$ vs 3.2, 6.0, $6.0{\times}10^2\;dyne/cm^2$; 15/20, $97.3{\times}10^2\;dyne/cm^2$ vs 11.1, 89.5, $92.0{\times}10^2\;dyne/cm^2$) decreased. Furthermore, the binding force of poloxamer gel became strong due to the hydrogen-bonding capacities of glycerin and the cross-liking bonding of sodium salt. Then, the gelation temperature (15/15, 35.0, $32.1^{\circ}C$; 15/20, 26.0, $21.0^{\circ}C$) decreased, and gel strength (15/15, 6.51 see, 300g; 15/20, 500, 650g) and bioadhesive force (15/15, 7.2, $81.6{\times}10^2\;dyne/cm^2$; 15/20, 112.3, $309.2{\times}10^2\;dyne/cm^2$) increased. The effect of pH on the physicochemical properties of poloxamer gel was dependent on the ingredients with which the buffer solutions were prepared. Poloxamer gels prepared with pH 1.2 and 4.0 buffer solutions had the increasing gelation temperature (15/15, 37.5, $38.1^{\circ}C$; 15/20, 33.1, $34.0^{\circ}C$) and the decreasing gel strength (15/15, 2.98, 3.81sec; 15/20, 200, 200g) and bioadhesive force (15/15, $7.0{\times}10^2dyne/cm^2$; 15/20, $74.0{\sim}88.1{\times}10^2dyne/cm^2$) owing to HCl. Poloxamer gel prepared with pH 6.8 buffer solutions had the decreasing gelation temperature (15/15, $27.2^{\circ}C$; 15/20, $22.3^{\circ}C$) and the increasing gel strength (15/15, 400g; 15/20, 550g) and bioadhesive force (15/15, $207.0{\times}10^2dyne/cm^2$; 15/20, $215.0{\times}10^2dyne/cm^2$) due to the cross-linking bonding of $NaH_2PO_4\;and\;K_2HPO_4$.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.27 no.2
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• pp.87-93
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• 2015

Recently, the heat exchangers are requiring higher performance and reliability since they are being used under the operating condition of high temperature and pressure. To satisfy these requirements, we need special materials and bonding technology. This study presents a manufacturing technology for high temperature and high pressure micro channel heat exchanger using Inconel 617. The bonding performance for diffusion bonded heat exchanger was examined and analyzed. The analysis were conducted by measuring thermal and mechanical properties such as thermal diffusivity and tensile strength, and parametric studies about bonding temperature and pressing force were also carried out. The results provided insight for bonding evaluation and the bonding condition of $1200^{\circ}C$, and 50 tons was found to be suitable for this heat exchanger. From the results, we were able to establish the base technology for the manufacturing of Inconel 617 heat exchanger through the application of the diffusion bonding.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.