• Journal of the Korean Society for Precision Engineering
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• v.31 no.5
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• pp.441-449
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• 2014

Thermoplastic fusion bonding is widely used to seal polymer microfluidic devices and optimal bonding protocol is required to obtain a successful bonding, strong bonding force without channel deformation. Besides, UV modification of the PMMA (poly-methyl methacrylate) is commonly used for chemical or biological application before the bonding process. However, study of thermal bonding for the UV modified PMMA was not reported yet. Unlike pristine PMMA, the optimal bonding parameters of the UV modified PMMA were $103^{\circ}C$, 71 kPa, and 35 minutes. A very low aspect ratio micro channel (AR=1:100, $20{\mu}m$ depth and $2000{\mu}m$ width) was successfully bonded (over 95%, n>100). Moreover, thermal bonding of multi stack PMMA chips was successfully demonstrated in this study. The results may applicable to fabricate a complex 3 dimensional microchannel networks.

• The korean journal of orthodontics
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• v.20 no.3 s.32
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• pp.583-591
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• 1990

If the bond strength is sufficient to resist orthodontic force, orthodontic brackets can be bonded to restorations. Orthodontic brackets were bonded to composite resin and glass ionomer cement restorations with no-mix adhesive or glass ionomer cement. The shear bond strength of adhesives bonded to restorations was studied in vitro. Orthodontic brackets were bonded to 10 extracted natural teeth, 40 composite resin restorations and 40 glass ionomer restorations. The surfaces of composite resin restorations were roughened or applied with bonding agent (Scothbond) after surface roughening. The surfaces of glass ionomer cement restorations were conditioned with acid etching or applied with Scotchbond to etched surface. The adhesive was no-mix resin or glass ionomer cement. The shear bond strength was measured. The results were as follows: 1. Orthodontic brackets could be bonded to composite resin restorations effectively as they could be bonded to acid etched enamel with no-mix adhesive. The shear bond strength was sufficient to resist orthodontic force and was not affected by bonding agent greatly. 2. The shear bond strength of no-mix adhesive bonded to acid etched glass ionomer cement restorations was sufficient to resist orthodontic force. However. the fracture risk of glass ionomer cement restorations was increased during debonding. The bonding agent couldn't increase the shear bond strength greatly. 3. The shear bond strength of glass ionomer cement bonded to glass ionomer cement restorations was lower than that of no-mix adhesive. The shear bond strength was sufficient to resist orthodontic force and was greatly decreased by bonding agent. 4. The shear bond strength of glass ionomer cement bonded to composite resin restorations was too low to resist orthodontic force.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.573-579
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• 2009

Titanium/aluminum/stainless steel(Ti/Al/STS) clad materials have received much attention due to their high specific strength and corrosion-resisting properties. However, it is difficult to fabricate these materials, because titanium oxide is easily formed on the titanium surface during heat treatment. The aim of the present study is to derive optimized cladding conditions and thereupon obtain the stable quality of Ti/Al/STS clad materials. Ti sheets were prepared with and without pre-heat treatment and Ti/Al/STS clad materials were then fabricated by cold rolling and a post-heat treatment process. Microstructure of the Ti/Al and STS/Al interfaces was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersed X-ray Analyser(EDX) in order to investigate the effects of Ti pre-heat treatment on the bond properties of Ti/Al/STS clad materials. Diffusion bonding was observed at both the Ti/Al and STS/Al interfaces. The bonding force of the clad material with non-heat treated Ti was higher than that with pre-heat treated Ti before the cladding process. The bonding force decreased rapidly beyond $400^{\circ}C$, because the formed Ti oxide inhibited the joining process between Ti and Al. Bonding forces of STS/Al were lower than those of Ti/Al, because brittle $Fe_3Al$, $Al_3Fe$ intermetallic compounds were formed at the interface of STS/Al during the cladding process. In addition, delamination of the clad material with pre-heat treated Ti was observed at the Ti/Al interface after a cupping test.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.35-40
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• 1997

The present study considers the analysis and control of the bonding process for a LOC DIe Bonder. A mathematical model for describing the bonding process is developed and proved by experiments. A feedback scheme is also applied for system in order to ensure the robustness of the bonding force control. The theoretical and experimental results are proved useful for the design and control of the LOC Die Bonder.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.17-22
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• 2013

We investigated the optimum bonding conditions for thermo-compression bonding of electrodes between flexible printed circuit board(FPCB) and rigid printed circuit board(RPCB) with Sn-58Bi solder as interlayer. In order to figure out the optimum bonding conditions, peel test of FPCB/RPCB joint was conducted. The peel strength was affected by the bonding conditions, such as temperature and time. The fracture energies were calculated through F-x (Force-displacement) curve during peel test and the relationships between bonding conditions and fracture behaviors were investigated. The optimum condition for the thermo-compression bonding with Sn-58Bi solder was found to be temperature of $195^{\circ}C$ and time of 7 s.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Journal of Welding and Joining
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• v.26 no.3
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.33-37
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified fer other bonding methods such as ACF.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1996.10b
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• pp.34-44
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• 1996

N-machine produces more than input energy at above 3000 rpm. any space energy is absorbed when the N-machine is rotating at a very high velocity. Laws of electromagnetics verify that normal conduction is due to that electrons moves from one three-dimensional crystallizing ${\pi}-bonding$ orbital to next. The ${\pi}-far$ infrared rays are generated from the resonance and rotation of the electrons on the orbitals of three-dimensional crystallizing ${\pi}-bonding$ atoms. Material in universe is composed of ${\pi}-rays$, which have alternative outward electric field. If the alternative outward electric fields of the ${\pi}-rays$ are resonant each other they make attraction force, which is the gravity. The collection of space energy is due to a attraction force between the radially alternating electric field and the ${\pi}-far$ infrared rays in the space. Electrons flow by absorbed density difference of ${\pi}-far$ infrared rays along a conduction wire, which also verifies that normal electron conduction is due to a flow from one three-dimensional crystallizing ${\pi}-bonding$ orbital to next.

• Journal of the Korean Society of Safety
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• v.25 no.1
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• pp.1-8
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• 2010

The tensile and fatigue experiments were conducted with tensile-shear specimens for investigating the strength of adhesive bonded and mechanical press joints of SPCC steel sheet used in the field of the automobile industry. The optimal punch press force was evaluated 50kN for combining epoxy adhesive bonding and mechanical press joining with a diameter of 8.3mm using SPCC sheet with a thickness of 0.8mm. The combining epoxy adhesive bonding and mechanical press joining exhibits the maximum tensile force of 750N. The fatigue strengths of the combination of adhesive bond and mechanical press joint and pure adhesive joint were evaluated 370N and 320N at 106cycles, respectively. These values correspond to 22% and 20% of their maximum tensile forces, respectively. However, the fatigue strength of the combination of adhesive bond and mechanical press joining was much lower than that of pure mechanical press joining.