• Transactions of Materials Processing
• /
• v.22 no.5
• /
• pp.269-274
• /
• 2013

Experiments and numerical simulations of the incremental upsetting test were carried out to investigate void closure behavior and mechanical characteristic of a 1.5wt%C ultra-high carbon steel. The experimental results showed that the voids become quickly smaller as the reduction ratio increases. The simulation results confirmed this behavior and indicated that the voids were completely closed at a reduction ratio of about 40~45% during incremental upsetting. After the completion of the incremental upsetting tests, the process of diffusion bonding was employed to heal the closed voids in the deformed specimens. To check the appropriate temperature for diffusion bonding, deformed specimens were kept at 800, 900, 1000 and $1100^{\circ}C$ for an hour. In order to investigate the effect of holding time for diffusion bonding at $1100^{\circ}C$, specimens were kept at 10, 20, 30, 40, 50 and 60minutes in the furnace. A distinction between closed and healed voids was clearly established using microstructural observations. In addition, subsequent tensile tests demonstrated that complete healing of a closed void was achieved for diffusion bonding temperatures in the range $900{\sim}1100^{\circ}C$ with a holding time larger than 1 hour.

• ETRI Journal
• /
• v.46 no.2
• /
• pp.347-359
• /
• 2024

A simultaneous transfer and bonding (SITRAB) process using areal laser irradiation is introduced for high-yield and cost-effective production of mini- or micro-light-emitting diode (LED) display panels. SITRAB materials are special epoxy-based solvent-free pastes. Three types of pot life are studied to obtain a convenient SITRAB process: Room temperature pot life (RPL), stage pot life (SPL), and laser pot life (LPL). In this study, the RPL was found to be 1.2 times the starting viscosity at 25℃, and the SPL was defined as the time the solder can be wetted by the SITRAB paste at given stage temperatures of 80℃, 90℃, and 100℃. The LPL, on the other hand, was referred to as the number of areal laser irradiations for the tiling process for red, green, and blue LEDs at the given stage temperatures. The process windows of SPL and LPL were identified based on their critical time and conversion requirements for good solder wetting. The measured RPL and SPL at the stage temperature of 80℃ were 6 days and 8 h, respectively, and the LPL was more than six at these stage temperatures.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.4
• /
• pp.395-403
• /
• 2012

This is direct bonding many of the metal bumps between FPCB and HPCB substrate. By using an ultrasonic horn mounted on an ultrasonic bonding machine, it is possible to bond gold pads onto the FPCB and HPCB at room temperature without an adhesive like ACA or NCA and high heat and solder. This ultrasonic bonding technology minimizes damage to the material. The process conditions evaluated for obtaining a greater bonding strength than 0.6 kgf, which is commercially required, were 40 kHz of frequency; 0.6MPa of bonding pressure; and 0.5, 1.0, 1.5, and 2.0 s of bonding time. The peel off test was performed for evaluating bonding strength, which was found to be more than 0.80 kgf.

• Journal of Welding and Joining
• /
• v.19 no.4
• /
• pp.423-428
• /
• 2001

The bonding phenomena of Ni base single crystal superalloy. CMSX-4 during transient liquid phase(TLP) bonding was investigated using MBF-80 insert metal. Bonding of CMSX-4 was carried out at 1,373∼1,548K for 0∼19.6ks in vacuum. The (001) orientation of each test specimen was aligned perpendicular to the bonding interface. The dissolution width of base metal was increased when the bonding temperature and holding time were increased. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process. Borides were formed in the bonded layer during TLP bonding operation. The solid phase grew epitaxially into the liquid phase from substrates and single crystallization could be readily achieved during the isothermal solidification.

• Journal of Welding and Joining
• /
• v.23 no.5
• /
• pp.55-60
• /
• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted into heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated. At the wavelength of 1100nm $87.5\%$ of incident laser energy was used for bonding process from the calculation. A heat transfer model was applied for obtaining the transient temperature profile. It was found that with the power of 29.5 mW, the interface begins to melt and bond each other in 3 sec and it is in a good agreement with experiment results. The transmission IR laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip applications.

• Transactions of Materials Processing
• /
• v.13 no.7
• /
• pp.623-628
• /
• 2004

This paper is concerned with pressure welding, which has been known as a main bonding mechanism during the cold and warm forming such as clad extrusion or bundle extrusion/drawing. Bonding characteristics between the Cu and Al plates by pressure welding are investigated focusing on the weak bonding. Experiments are performed at the cold and warm temperatures ranging from the room temperature to $200^{\circ}C$. The important factors examined in this work are the welding pressure, pressure holding time, surface roughness, and temperature. A bonding map, which can identify the bonding criterion with a weak bonding strength of IMPa , is proposed in terms of welding pressure and surface roughness fur the cold and warm temperature ranges.

• Journal of Welding and Joining
• /
• v.15 no.4
• /
• pp.136-142
• /
• 1997

In this study, the amorphous foil filler, thickness of 20 - $20~30\mu\textrm{m}$ was made to develop Cu-7.5wt%Mn-7.5wt%Si insert alloy(melting point temperature : solidus line 1003K, liquidus line 1070K). Liquid phase diffusion bonding of 304 stainless steels (STS304), is carried out successfully by using developed Cu-7.5Mn-7.5Si insert alloy. Bonding conditions are taken from bonding pressure of 5MPa, bonding temperatures from 1073K to 1423K varied within 50K and brazing holding times of 0, 30, 60 and 240 minutes. As the results, the tensile strength in the liquid phase diffusion bonding is a little bit lower than that in the solid phase diffusion bonding. The authors find out that the liquid phase diffusion bonding needs lower bonding pressure than the others. Therefore, the liquid phase diffusion bonding had an excellent brazability in which the bonding process showed the typical mechanism of diffusion bonding. In corresponding, the new developed insert alloy of low melting pointed Cu-7.5Mn-7.5Si makes possible brazing between the STS304.

• Transactions of Materials Processing
• /
• v.16 no.2 s.92
• /
• pp.144-149
• /
• 2007

The superplastic forming/diffusion bonding(SPF/DB) is widely used in the automotive and aerospace industry because it has great advantage to produce complex, light and strong parts. But the superplastic forming process requires much forming time and generates excessive thinning in the thickness distribution of formed part. It is necessary to minimize trial and error for SPF/DB Process. Finite element analysis using $L_{18}$ orthogonal may table of Taguchi method for 3-Sheet D/B process is carried out. Through the study, effect of process parameters, such as DH region size, thickness and friction coefficient, is evaluated and the optimum condition is derived.

• Journal of the Korean Society for Precision Engineering
• /
• v.31 no.10
• /
• pp.865-871
• /
• 2014

Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.10a
• /
• pp.721-722
• /
• 2009