• Journal of Welding and Joining
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• 제4권1호
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• pp.32-39
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• 1986

This paper was studied about the influence of oxidized films on workability in cold pressure welding. In preceding studies, the principal foci of the studies about pressure welding were considered several factors(surface manufacturing methods, surface roughness, pressure welding speed and surface temperature). But the influence to the growth of oxidation have hardly known well. So the purpose of this paper consists in solving the question above and proposing the optimal states of the pressure welding. Therefore the results obtained is as the following; When the oxidation time is within about 2 minutes, the bonding strength is very good after surface manufacturing of the neighboring to be bonded. The more surfaces are fine the more bonding strength is excellent. Above all, the optimal condition of cold pressure welding is the state that the characteristic value is 38% with smooth surface and without oxidation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.561-564
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• 2000

Silicon capacitive pressure sensor has been fabricated by using electrochemical etching stop and silicon-to-glass electrostatic bonding technique. A diaphragm structure is designed to compensate the nonlinear response. A cavity is etched into the silicon to the depth of 2$\mu\textrm{m}$ by anisotropic etching in 20wt.% TMAH solution at 80$^{\circ}C$. A fabricated sensor showed 3.3 pF zero-pressure capacitance, 297 pp.m/mmHg sensitivity, and a 7.4 7%F.S. nonlinear response in a 0-1 kgf/cm$^2$pressure range.

• Journal of Welding and Joining
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• 제29권1호
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• pp.52-58
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• 2011

In this paper, the direct bonding process between FPCB and HPCB was studied. By using an ultrasonic horn which is mounted on the ultrasonic bonding machine, it is alternatively possible to bond the gold pads attached on the FPCB and HPCB at room temperature without an adhesive like ACA or NCA. The process condition for obtaining more bonding strength than 0.6 Kgf, which is commercially required, was carried out as 40 kHz of frequency, 0.6 MPa of bonding pressure and 2 second of bonding time. The peel off test was performed for evaluating bonding strength which results in more than 0.8 Kgf.

• Journal of Welding and Joining
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• 제31권6호
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• pp.77-83
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• 2013

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• 마이크로전자및패키징학회지
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• 제20권1호
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• pp.7-13
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• 2013

3D 적층 IC 개발을 위한 본딩 기술의 현황에 대해 알아보았다. 실리콘 웨이퍼를 본딩하여 적층한 후 배선 공정을 진행하는 wafer direct bonding 기술보다는 배선 및 금속 범프를 먼저 형성한 후 금속 본딩을 통해 웨이퍼를 적층하는 공정이 주로 연구되고 있다. 일반적인 Cu 열압착 본딩 방식은 높은 온도와 압력을 필요로 하기 때문에 공정온도와 압력을 낮추기 위한 연구가 많이 진행되고 있으며, 그 가운데서 Ar 빔을 조사하여 표면을 활성화 시키는 SAB 방식과 실리콘 산화층과 Cu를 동시에 본딩하는 DBI 방식이 큰 주목을 받고 있다. 국내에서는 Cu 열압착 방식을 이용한 웨이퍼 레벨 적층 기술이 현재 개발 중에 있다.

• 문화기술의 융합
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• 제6권2호
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• pp.553-560
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• 2020

기존 연구논문에서 일정한 크기의 압력을 가할 수 있는 기계식 가압장비를 개발하여 보수단면에 시공되는 보수재에 압력을 가할 경우 부착강도가 증가하는 효과를 확인할 수 있었다. 본 연구논문에서는 기계식 가압장비의 압력을 0, 10, 30, 50 및 80kPa로 달리하여 재령 3 및 28일에서 공시체의 휨, 압축 및 부착강도와 가압판 변형을 측정한 결과를 분석하여 기계식 가압장비에 효과적인 압력을 선정하는 시험을 실시하였으며 시험결과 압력이 높을수록 강도값은 증가하였으나 50kPa이상일 경우 가압판에 변형이 생기는 문제가 발생하였으며 이에 따라 강도값에 큰 차이가 없는 30kPa가 가장 효율적인 압력임을 알 수 있었다. 주성분이 실리카흄, 알루미나 시멘트 및 섬유를 서로 다르게 혼합한 3종류의 보수재로 공시체를 제작한 후 건조 및 습윤 상태, 시공부위별 (천장부, 벽체부 및 바닥판) 그리고 가압 유무에 따라 재령 3, 7, 14 및 28일에 부착강도를 측정한 결과 가압시 재령 3일 부착강도값이 비가압한 재령 7 및 14일 발현 강도값과 동등하거나 높아 공기단축이 필요로 하는 보수공사에 유리할 것으로 판단되었으며 가압시 신속한 수분의 배출이 가능한 셀룰로오즈 섬유가 혼입된 보수재가 가압장비에 가장 효과적임을 알 수 있었다.

• 한국기계가공학회지
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• 제8권2호
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• pp.76-82
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• 2009

In this papers, Study on the Bonding property and Strength Evaluation in Bonding interface Joints of Dissimilar material using DOE. We found optimal condition that uses experimental design method (Response Surface Analysis, DOE) used temperature, pressure, time on experiment factor. And we could get bonding condition and strength that break and crack do not happen in mechanical processing about united dissimilar material. And progress 3 point bending tests and verified result.

• 한국정밀공학회지
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• 제27권7호
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• pp.28-35
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• 2010

In the display industry, COG bonding method is being applied to production of LCD panels that are used for mobile phones and monitors, and is one of the mounting methods optimized to compete with the trend of ultra small, ultra thin and low cost of display. In COG bonding process, electrical characteristics such as contact resistance, insulation property, etc and mechanical characteristics such as bonding strength, etc depend on properties of conductive particles and epoxy resin along with ACF materials used for COG by manufacturers. As the properties of such materials have close relation to optimization of bonding conditions such as temperature, pressure, time, etc in COG bonding process, it is requested to carry out an in-depth study on characteristics of COG bonding, based on which development of bonding process equipment shall be processed. In this study were analyzed the characteristics of COG bonding process, performed the analysis and reliability evaluation on electrical and mechanical characteristics of COG bonding using ACF to find optimum bonding conditions for ACF, and performed the experiment on bonding characteristics regarding fine pitch to understand the affection on finer pitch in COG bonding. It was found that it is difficult to find optimum conditions because it is more difficult to perform alignment as the pitch becomes finer, but only if alignment has been made, it becomes similar to optimum conditions in general COG bonding regardless of pitch intervals.

• 한국분말재료학회지
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• 제20권2호
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• pp.114-119
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• 2013

In the DBC (direct bonding of copper) process the oxygen partial pressure surrounding the AlN/Cu bonding pairs has been controlled by Ar gas mixed with oxygen. However, the direct bonding of Cu with sound interface and good adhesion strength is complicated process due to the difficulty in the exact control of oxygen partial pressure by using Ar gas. In this study, we have utilized the in-situ equilibrium established during the reaction of $2CuO{\rightarrow}Cu_2O$ + 1/2 $O_2$ by placing powder bed of CuO or $Cu_2O$ around the Cu/AlN bonding pair at $1065{\sim}1085^{\circ}C$. The adhesion strength was relatively better in case of using CuO powder than when $Cu_2O$ powder was used. Microstructural analysis by optical microscopy and XRD revealed that the interface of bonding pair was composed of $Cu_2O$, Cu and small amount of CuO phase. Thus, it is explained that the good adhesion between Cu and AlN is attributed to the wetting of eutectic liquid formed by reaction of Cu and $Cu_2O$.