• Journal of Welding and Joining
• /
• v.19 no.4
• /
• pp.423-428
• /
• 2001

The bonding phenomena of Ni base single crystal superalloy. CMSX-4 during transient liquid phase(TLP) bonding was investigated using MBF-80 insert metal. Bonding of CMSX-4 was carried out at 1,373∼1,548K for 0∼19.6ks in vacuum. The (001) orientation of each test specimen was aligned perpendicular to the bonding interface. The dissolution width of base metal was increased when the bonding temperature and holding time were increased. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process. Borides were formed in the bonded layer during TLP bonding operation. The solid phase grew epitaxially into the liquid phase from substrates and single crystallization could be readily achieved during the isothermal solidification.

• Journal of Welding and Joining
• /
• v.21 no.2
• /
• pp.82-88
• /
• 2003

The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)

• Journal of Welding and Joining
• /
• v.19 no.3
• /
• pp.325-333
• /
• 2001

The effect of base metal grain size on isothermal solidification behavior of Ni-base superalloy, CMSX-2 during transient liquid phase (TLP) bonding was investigated employing MBF-80 insert metal. TLP-bonding of single crystal. coarse-grained and fine-grained CMSX-2 was carried out at 1373∼1548k for various holding time in vacuum. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process for single crystal, coarse-grained and fine-grained base metals. The completion time for isothermal solidification decreased in the order ; single crystal, coarse-grained and fine-grained base metals. The difference of isothermal solidification rates produced when bonding the different base metals could be explained quantitatively by the effect of base metal grain boundaries on the apparent average diffusion coefficient of boron in CMSX-2.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1057-1059
• /
• 1993

Some interested phenomena, which were appeared near the bonding interface, were investigated by angle lapping and delineation method, SEM, and TEM observations. Voids, defects, material continuity, and interfacial oxide stability were observed and discussed in the fusion-bonded Bi-Si or Si-$SiO_2$/Si wafer pairs.

• Proceedings of the KWS Conference
• /
• 1997.05a
• /
• pp.201-202
• /
• 1997

• Proceedings of the KWS Conference
• /
• 2000.04a
• /
• pp.211-214
• /
• 2000

• Proceedings of the KWS Conference
• /
• 2002.05a
• /
• pp.96-98
• /
• 2002

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.17 no.5
• /
• pp.111-116
• /
• 2018

Thermal fusion bonding is a method to enclose open microchannels fabricated on polymer chips for use in lab-on-a-chip (LOC) devices. Polymethyl methacrylate (PMMA) is utilized in various biomedical-microelectromechanical systems (bio-MEMS) applications, such as medical diagnostic kits, biosensors, and drug delivery systems. These applications utilize PMMAs biochemical compatibility, optical transparency, and mold characteristics. In this paper, we elucidate both the conformational entanglement of PMMA molecules at the contact interfacial regime, and the qualitative nature of the thermal fusion bonding phenomena through systematic molecular dynamics simulations.

• Journal of the Korean Ceramic Society
• /
• v.16 no.3
• /
• pp.178-183
• /
• 1979

The carborundum abrasive specimens bonded with a soda-borosilicate glass were prepared. Samples fired at specified temperatures with various mixing ratio and forming pressure were examined in terms of the structure, bonding strength, and microscopic observations. Increasing the forming pressure up to 400kg/$\cm^2$, the structure became denser in proportion to the forming pressure. The bonding strength was generally increased with increasing the mixing ratio (Vb/Vg), but the bloating phenomena were observed when samples were fired above 95$0^{\circ}C$ with mixing ratio above 20%, consequently, the bonding strength was decreased. Samples fired at the temperature range 900~95$0^{\circ}C$ with mixing ratio 15~30% had the dense structure with various grades.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.7
• /
• pp.315-318
• /
• 2005

The effect of plasma cleaning was examined on package delamination phenomena in the integrated circuit (IC) packaging process. Without plasma cleaning, delamination was observed for all three experimental treatments applied after the packaging step, which include bake of If, reflow, and bake of If followed by reflow However, no delamination was observed when the plasma cleaning was performed before and after the wire bonding step. Plasma cleaning was found to be a critical step to improve the reliability of the package by reducing the possibility of contact failure between die pad and bonding wire.