• Journal of Applied Biological Chemistry
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• v.54 no.3
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• pp.159-165
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• 2011

Rosmarinus officinalis extracts had a significant antimicrobial activity against Helicobacter pyori. Total phenolic contents and inhibition zone of rosemary extracts were estimated to be 25.7 mg/g and 14 mm at $200{\mu}g/mL$ of phenolic contents, respectively. The Sephadex LH-20 and MCI-gel CHP-20 column chromatographic separations for the phenolic extracts from R. officinalis leaves led to isolation of five acids, whose structures were determined as protocatechuic acid (A), coumaric acid (B), caffeic acid (C), chlorogenic acid (D), and rosmarinic acid (E), from interpretation of spectroscopic data including nagative fast atom bombardment (FAB)-mass, $^1H$-NMR, $^{13}C$-NMR, and IR. All isolated compounds were tested for antimicrobial activity against H. pyori. The purified single compound showed less antimicrobial activity against H. pylori than the mixed purified compounds, which generate A+B, A+E, C+D, C+E (each $200{\mu}g/disc$) excellent as large clear zone by synergy effect. These results indicate rosemary extracts are preventive agents against H. pyori.

• Journal of Plant Biotechnology
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• v.6 no.1
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• pp.9-13
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• 2004

Transient uidA expression was used to optimize parameters required for biolistic transformation of suspension cells of Easter lily, Lilium longiflourm. Maximum uidA expression occurred following bombardment with gold particles as compared to tungsten. A 3hr pre-treatment of suspension cells with 0.125M osmoticum resulted in a 1.5X increase in uidA expression. A helium pressure of 1550 psi combined with a particle travelling distance of 6cm resulted in maximum uidA expression as compared to either 1100, 1200, or 1800 psi. Transient transformation resulted in up to 493 uidA expressing cells/Petri plate. For stable transformation suspension cells of Lilium longiflorum, were co-bombarded with plasmid DNA containing cucumber mosaic virus (CMV) replicase under the rice actin (Act1) promoter and either the bar or PAT genes under the cauliflower mosaic virus (CaMV 355) promoter. Ten regenerated plants contained the transgene as analyzed by PCR, and two of the ten plants were confirmed to contain the transgene by Southern hybridization. The two transgenic plants were independent transformants, one containing the bar gene and the other both the CMV replicase and bar genes. Plants were sprayed at the rosette stage and found to be resistant to 1000 mg/L of phosphinothricin (Trade name-Ignite) indicating expression of the bar gene throughout the leaves when bar was under control of the CaMV 35S promoter.

• Journal of Microbiology and Biotechnology
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• v.10 no.3
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• pp.386-393
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• 2000

Recent research on the fatty acyl chains in the membrane lipids in Sarcina ventriculi has shown that unusually long chain bifunctional fatty acyl components are the major components of the total lipid. However, these studies did not yield any information on the complete structures of the lipid species containing these fatty acids. In this study, the structures of a new family of glucolipids containing bifunctional acyl chains are described. These structures were determined using NMR(Nuclear Magnetic Resonance) Spectroscopy, GC (Gas Chromatography)/MS (Mass Spectrometry), FTIR (Fourier Transform Infrared) spectroscopy, and FAB (Fast Atom Bombardment) mass spectrometric studies. One of the major bifunctional acyl components of the $\alpha$-glucolipids was an $\omega$-formylmethyl ester indicating the presence of plasmalogen. The general structure of the lipid components was one in which the two head groups were separated by a membrane-spanning acyl species. One head group component is a glycerol moiety of each head group, and the other is a glyceryl clucoside. Two regular chain fatty acids, one on the glycerol moiety of each head group, are also present and meet in the middle of the membrane, roughly equidistant from each head group.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.189-193
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• 2008

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$ and $HfO_2$) of TiN thin films in the $CH_4$/Ar inductively coupled plasma. The maximum etch rate of $274\;{\AA}/min$ for TiN thin films was obtained at $CH_4$(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4$ containing plasmas.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.516-521
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• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.158-158
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.161-161
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• 2009

Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as $SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.162-162
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• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.