• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.3C
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• pp.234-240
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• 2002

A power amplifier with AlGaAs/InGaAs/GaAs HBT's has been developed for customer premise equipments of the quasi millimeter-wave frequency-band broadband wireless local loop(BWLL) system. Parameters of the linear and nonlinear equivalent circuits for a common base HBT have been extracted by a fitting method. The amplifier has been designed through the linear and nonlinear circuit simulations and fabricated on a ceramic substrate for a hybrid IC. The amplifier has produced a 25.5-dBm output power with 35% power-added efficiency(PAE) at 24.4 GHz and achieved a 7.5-dB linear power gain at 24.8 GHz. In 24.25 ∼24.75 GHz band, the amplifier has exhibited a saturated output over larger than 22 dBm and PAE higher than 25%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.12
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• pp.2489-2497
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• 1994

This paper presents the development of a 10 W solid-state hybrid power amplifier(SSPA). operating over $7.7\sim8.5GHz$. The fabrication and measurement of this amplifier are performed with 3 sections, such as the front one for high gain, the middle one for driving, and high power one, to minimize the risk of failure and to increase the easiness of development. and then the final amplifier is realized by connecting 3 sections above mentioned, DC bias circuit, and temperature compensation circuit on one housing. Total small signal gain obtained is about $45\pm1dB$, the input and output return losses are 25 and 27 dB respectively. The output power measured at 1 dB gain compression point for 3 frequencies at 7.7, 8.1, and 8.5 GHz are $39.8\sim40.4dBm$, which is about 10 W. and the 3rd-order harmonic powers of 2 tones test are 13.34 dBc at output power 37.5 dBm. These obtained results satisfies the initially required specification. and the realized SSPA can be installed as a subsystem of the microwave transponder for telecommunication.

• Journal of Mushroom
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• v.2 no.2
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• pp.76-87
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• 2004

This experiments were conducted to study on the economic analysis of Phellinus spp.(Comercial name: Sanghwang mushroom). These results were as follows: Phellinus spp. can be cultivated about 4 years by one time inoculation. This mushroom has been cultivated by the method of burying log into the soil(BM) at the first time. Recently, however, the method of hanging log on the shelves in the house(HM) is used, because HM has more advantage than BM that HM can be cultivated more pieces of logs than BM. On the other hand, HM is required to invest more 5,678,230Won for the equipments than the BM. And also, HM is required 14,400 pieces(2.8 times) more log numbers than BM 5,000 pieces. Also, HM is required more 3,680,000Won to purchase log, 1,104,000Won to purchase spawn. The cost of production is required to 20,180,971Won for BM, and 37,953,825Won for HM. Accordingly, product cost of HM is 1.9 times higher than BM. The operating cost is required to 1,207,712Won for BM, and 24,075,432Won for HM. Accordingly, operating cost of HM is 2.0 times higher than BM. The net income is 580,940,000Won for BM, and 1,683,300,000Won for HM. Accordingly, net income of HM is 2.9 times higher than BM. The income is 589,040,000Won for BM, and 169,718,000Won for HM. Accordingly, income of HM is 2.9 times higher than BM. In conclusion, HM is required 2.8 times more logs. HM has 1.03 times more products per a piece of log. HM has 1.9 times more production cost, and 2.0 times more operating cost. As you read above, HM and BM have two different aspects. BM is required less investment cost than HM, but BM has lower income because of the different capacity of production. By the comparing those two methods, HM is resulted more efficient method for the producing mushroom. Only in the side of cash flowing, the cash expenditure of BM is required less money at first year. But it has no production at first year. BM would get the income after 2 years buring the logs. The cash expenditure of HM is required much money for the equipments and the logs at first year, but HM would get the income at first year.

• Journal of Biomedical Engineering Research
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• v.19 no.1
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• pp.81-90
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• 1998

Electromagnetic waves may induce various effects on nervous tissues either by thermal or non-thermal mechanisms. This paper intoduces a method to evalute the non-thermal effect to central nervous system by measuring the EEGs of the rabbits treated by nimodipine before exposed to weak microwave field. 20 rabbits were divided into 2 groups and their EEGs were measured after their head section were exposed to 2,450 MHz microwave with the power density of 10 dBm and 20 dBm respectively for 10 minutes and compared with those of the 3rd group of 10 rabbits which were not exposed. The 4th group of 10 rabbits were intravenously given with nimodipine before exposed to 20 dBm field to determine whether this drug would reverse the EEGs changes induced by weak microwave irradiation. As field poser exceeded 20 dBm although no significant physiological changes were observed, total induced EEGs power was remarkably decreased suggesting the presence of CNS activation. Using Fourier analysis on the EEGs signal it was found that remarkable decrease in delta band and increase in the alpha and beta bands in a significant manner(P<0.05) compared to control group. The changes were, however, not reversed by nimodipine-treatment. The effects may be pure thermal in nature because no significant change has been observed in nimodipine treated rabbits.

• Journal of electromagnetic engineering and science
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• v.10 no.1
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• pp.6-12
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• 2010

In this paper, highly efficient class-F power amplifiers(PAs) with harmonic-controlling transmission lines(TLs) were built for cellular and WLAN applications at 840 MHz and 2.4 GHz each. Also, based on these single-band PAs, a dualband class-F PA was designed after a careful investigation into the harmonics of the two frequencies. The harmonic-controlling TL was designed for the class-F operation at dualband by switching the length of the shunt $\lambda$/4 TL part, while the series $\lambda$/4 TL is optimized for both frequencies. To verify the performance, two class-F PAs optimized at each frequency and a dualband class-F PA at the corresponding frequencies were built with the secondand the third-harmonic control circuits at each frequencies. As a result, the PA#1 at 840 MHz has a peak drain efficiency of 81.2 % with an output power of 24.4 dBm, while the PA#2 at 2.35 GHz shows a drain efficiency of 94.5 % with an output of 22.8 dBm. Finally, the dualband class-F PA#3 showed 60.5 % and 50.9 % drain efficiencies at 840 MHz and 2.4 GHz, with powers of 23.8 dBm and 19.62 dBm, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.9
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• pp.897-903
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• 2011

This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.83-89
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• 2014

A ku-band complementary cross-coupled differential voltage controlled oscillator is designed, measured and fabricated using $0.18-{\mu}m$ CMOS technology. A 2.4GHz of very wide frequency tuning at oscillating frequency of 14.5GHz is achieved with presented circuit topology and MOS varactors. Measurement results show -1.66dBm output power with 18mA DC current drive from 3.3V power supply. When 5V is applied, the output power is increased to 0.84dBm with 47mA DC current. -74.5dBc/Hz phase noise at 100kHz offset is measured. The die area is $1.02mm{\times}0.66mm$.

• Journal of Broadcast Engineering
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• v.23 no.5
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• pp.693-700
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• 2018

In this paper, we propose a wireless video transmission scheme, providing medium and long range communication in the 2.4GHz band with beamforming. With this scheme, it is shown that the transmission rate of 32Mbps and received signal power of -77dBm is achieved with 4 antennas of 5dBi and 16dBm transmit power at each antenna connection for the distance of 3.6km. The scheme also provides transmission distance of 20km for 10~12Mbps with the 4 omni-directional antennas of 5dBi.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.10
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• pp.1626-1635
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• 1997

It is important to ensure the reliability of the first localized reactor vessel steel. To satisfy with this purpose, a study on the impact/hardness, low cycle fatigue(LCF), crack growth rate(da/dN) and fracture toughness( ) of base material(BM) and weld metal(WM) were performed under room temperature air and corrosion conditions. A summary of the results is as folows : (1) Charpy impact absorbed energy of BM was the highest value, heat affected zoon(HAZ) and the lowest, WM. The hardness of BM was similar to HAZ. (2) Coefficients of Manson equation using the monotonic tensile test data were obtained for the present material. (3) The effects of stress ratio and ambient (120.deg. C and NaCl) condition on da/dN were investigated, da/dN with NaCl condition expressed the highest value. (4) The results of Charpy V-notch impact test had good correlation with $K_{IC}$ characteristics and the lowest curve of $K_{IC}$ for BM was derived, more researches about WM and HAZ are required hereafter.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.