• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.3
• /
• pp.106-111
• /
• 2018

Halide perovskite nanocrystals have become attractive for LED applications due to their high color purity and excellent luminescent properties. $CsPbX_3$ (X = I, Br, and Cl) nanocrystals were synthesized by hot-injection method and the emission wavelength was controlled by changing the composition of halide ion. Green- and red-emitting films were fabricated using a polymer binder. The outstanding optical properties of the synthesized nanocrystals and fabricated films were confirmed. The wLED designed by green- and red-emitting perovskite nanocrystal films on blue InGaN LED was characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.144-144
• /
• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.73-73
• /
• 2008

일반적으로 청색 및 자외선 발광다이오드, 레이저 다이오드, UV 감지기 (detector)소자 등의 기술적인 중요성은 ZnO를 기반으로 하는 산화물 반도체와 함께 와이드 밴드갭 반도체 연구가 활발히 진행되고 있다. ZnO의 경우 밴드갭 엔지니어링을 위해 일반적으로 Cd과 Mg을 사용하고 있으며 특히, ZnO에 Mg을 첨가하여 MgZnO 화합물을 첨가할 경우 밴드갭을 3.3eV~7.8eV까지 증가 시킬 수 있고, MgZnO/ZnO 초격자 구조를 이용할 경우 자유 엑시톤 결합에너지를 100meV 이상까지 증가시킬 수 있는 장점을 가지고 있다. 그러나 MgO는 결정구조가 rocksalt 구조를 가지는 입방정 구조이기 때문에 Hexagonal 구조를 가진 ZnO에 첨가될 경우 고용도에 큰 제한을 가지게 된다. 이와 같은 문제점으로 인하여 밴드갭 엔지니어링 기술은 여전히 해결되지 않은 문제점으로 남아 있다. 본 실험에서는 RF 마그네트론 스퍼터링 방법으로 사파이어 기판위에 MgZnO/ZnO 박막을 co-sputtering 시켰다. Targer은 ZnO(99.999%) 와 MgO (99.999%) target을 사용하였고, 스퍼터링 가스는 아르곤과 산소가스를 2:1 비율로 혼합시켜 성장하였다. MgZnO 박막을 성장하기 전 ZnO 층을 ~500 두께로 성장 시켰다. RF-power는 ZnO target을 고정 시키고, MgO targe power를 변화시켜 Mg 농도를 조절 하였다. 실험 결과 MgO target power 가 증가 할수록 반치폭이 증가하고, c-plane을 따라 격자 상수가 감소하는 것을 확인 할 수 있고, UV emission peak intensity가 감소며 단파장쪽으로 blue shift 하고, activation energy 가 증가하는 것을 관찰 할 수 있었다.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.5
• /
• pp.1414-1420
• /
• 2013

Five novel spiro[benzo[c]fluorene-7,9'-fluorene] based dyes, including 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-5-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (7), 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-9-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (8), 5-[spiro[benzo[c]fluorene-7,9'-fluoren]-2'-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (9), 9-[spiro[benzo[c]fluorene-7,9'-fluoren]-9-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (10), and 2'-[spiro[benzo[c]-fluorene-7,9'-fluoren]-2'-yl] spiro[benzo[c]fluorene-7,9'-fluorene] (11) were successfully prepared from the corresponding halogen and boronic acid derivatives through the Suzuki coupling reaction, respectively. Chemical structures were confirmed by $^1H$ nuclear magnetic resonance (NMR), $^{13}C$ NMR, Fourier transforminfrared spectrscopy, mass spectroscopy, and elemental analysis. The thermal properties were determined by differential scanning calorimetry and thermal gravimetric analysis. The relationships between the optical and electrochemical properties and the combined positions between these dimers were systematically investigated using UV-vis, photoluminescence (PL), and photoelectron spectroscopy. These five dimers exhibited high fluorescent quantum yields and good morphological stability with high glass transition states > $174^{\circ}C$. Dimer 7 showed a UV absorbance peak at 353 nm, emission PL peak at 424 nm, and quantum efficiency of 0.62 in a cyclohexane solution.

• Molecules and Cells
• /
• v.21 no.2
• /
• pp.229-236
• /
• 2006

Gaegurin 4 (GGN4), a novel peptide isolated from the skin of a Korean frog, Rana rugosa, has broad spectrum antimicrobial activity. A number of amphipathic peptides closely related to GGN4 undergo a coil to helix transition with concomitant oligomerization in lipid membranes or membrane-mimicking environments. Despite intensive study of their secondary structures, the oligomeric states of the peptides before and after the transition are not well understood. To clarify the structural basis of its antibiotic action, we used analytical ultracentrifugation to define the aggregation state of GGN4 in water, ethyl alcohol, and 1,1,1,3,3,3-hexafluoro-2-propanol (HFIP). The maximum size of GGN4 in 15% HFIP corresponded to a decamer, whereas it was monomeric in buffer. The oligomeric transition is accompanied by a cooperative 9 nm blue-shift of maximum fluorescence emission and a large secondary structure change from an almost random coil to an ${\alpha}$-helical structure. GGN4 induces pores in lipid membranes and, using electrophysiological methods, we estimated the diameter of the pores to be exceed $7.3{\AA}$, which suggests that the minimal oligomer structure responsible is a pentamer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.5
• /
• pp.437-443
• /
• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.3
• /
• pp.78-80
• /
• 2000

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.413-413
• /
• 2010

In semiconductor manufacturing field, all equipments have various sensors to diagnosis the situations of processes. For increasing the accuracy of diagnosis, hundreds of sensors are emplyed. As sensors provide millions of data, the process diagnosis from them are unrealistic. Besides, in some cases, the results from some data which have same conditions are different. We want to find some information, such as data and knowledge, from the data. Nowadays, fault detection and classification (FDC) has been concerned to increasing the yield. Certain faults and no-faults can be classified by various FDC tools. The uncertainty in semiconductor manufacturing, no-faulty in faulty and faulty in no-faulty, has been caused the productivity to decreased. From the uncertainty, the rough set theory is a viable approach for extraction of meaningful knowledge and making predictions. Reduction of data sets, finding hidden data patterns, and generation of decision rules contrasts other approaches such as regression analysis and neural networks. In this research, a RGB sensor was used for diagnosis plasma instead of optical emission spectroscopy (OES). RGB data has just three variables (red, green and blue), while OES data has thousands of variables. RGB data, however, is difficult to analyze by human's eyes. Same outputs in a variable show different outcomes. In other words, RGB data includes the uncertainty. In this research, by rough set theory, decision rules were generated. In decision rules, we could find the hidden data patterns from the uncertainty. RGB sensor can diagnosis the change of plasma condition as over 90% accuracy by the rough set theory. Although we only present a preliminary research result, in this paper, we will continuously develop uncertainty problem solving data mining algorithm for the application of semiconductor process diagnosis.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.124-124
• /
• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Korean Journal of Materials Research
• /
• v.18 no.1
• /
• pp.1-4
• /
• 2008

The phase transformations and luminescent properties of Eu-doped $Ca_{1-x}Sr_xAl_2O_4$ phosphors were investigated. $Ca_{1-x}Sr_xAl_2O_4:Eu^{2+}$ phosphors were synthesized by a solid-state reaction with a flux, $H_3BO_3$. A phase transformation from monoclinic $CaAl_2O_4$ to monoclinic $SrAl_2O_4$ was observed as the x values increased. A high-temperature hexagonal phase of $SrAl_2O_4$ was formed during this transformation as an intermediate phase under an $H_2$ atmosphere due to oxygen vacancies; this did not occur in an air atmosphere. Accordingly, the emission spectra shifted from a blue region to a green region as x increased.