• Journal of Advanced Marine Engineering and Technology
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• v.27 no.1
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• pp.33-41
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• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.51-52
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• 2005

Optical characteristics of excitonic blue and green emission of Te-doped ZnSSe:Te epitaxial layers, grown by molecular beam epitaxy, were investigated by photoluminescence (PL) measurements. The Te-doped ternary specimen shows strong blue or green emission (at 300K) which is assigned to $Te_1$ or $Te_n$ $(n{\geq}2)$ cluster cluster bound exciton, respectively. Bright green and blue light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The green LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 $A/cm^2$ under CW condition at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.456-461
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• 2012

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue, blue/red and red/blue/red emitting layer (EML) structures were fabricated using a host-dopant system. In case of white PHOLEDs with red/blue structure, the best efficiency was obtained at a structure of red (15 nm)/blue (15 nm). But the emission color was blue-shifted white. In case of white PHOLEDs with blue/red structure, the better color purity and efficiency were observed at a blue (29 nm)/red (1 nm) structure. For additional improvement of color purity in white PHOLEDs with blue (29 nm)/red (1 nm) EMLs, we fabricated white PHOLEDs with red (1 nm)/blue (28 nm)/red (1 nm) structure. The current efficiency, external quantum efficiency, and CIE (x, y) coordinate were 27.2 cd/A, 15.1%, and (0.382, 0.369) at 1,000 $cd/m^2$, respectively.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1639-1646
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• 2014

A series of novel fused-ring spiro compounds, spiro[benzo[ij]tetraphene-7,9'-fluorene] (SBTF) derivatives containing an end-capping aryl substituent at both the C3 and C10-positions hasbeen designed and synthesized via multi-step Suzuki coupling reactions. 3-(1-Naphthyl)-10-phenylSBTF (1N-PSBTF), 3-(2-naphthyl)-10-phenylSBTF (2N-PSBTF) and 3-[4-(1-naphthyl)phenyl]-10-phenylSBTF (NP-PSBTF) showed improved glass transition temperatures ($T_g$) with good thermal stability. Their photophysical, electrochemical, and electroluminescent properties were investigated and were used to construct blue organic light emission diodes (OLEDs). The typical OLED devices showed excellent performance; the NP-PSBTF-based device exhibited highly efficient deep blue-light emission with a maximum efficiency of 5.27 cd/A (EQE, 4.63%) with CIE (x = 0.133, y = 0.144). According to these characteristics, these deep-blue light emitting materials have sufficient potential for fluorescent OLED applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.931-934
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• 2001

GaN nanowires has much interest as one-dimensional materials for blue light LED. GaN-based materials have been the subject of intensive research for blue light emission and high temperature/high power electronic devices. In this letter, the synthesis of GaN nanowires by the reaction of mixture of GaN nanowires by the reaction of mixture of Ga meta and GaN powder with NH$_3$ using thermal chemical vapor deposition is reported. X-ray diffraction, energy dispersive x-ray spectrometer, scanning electron microscopy, and transmission electron microscopy indicate that those GaN nanowires with hexagonal wurtzite structure were about 60nm in diameter and up to several hundreds of micrometers in length.

• Macromolecular Research
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• v.14 no.1
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• pp.81-86
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• 2006

Poly(fluorenylenevinylene-terphenylenevinylene) containing phenyl pendant group was synthesized by Suzuki coupling reaction and characterized by ${1}^H$-NMR, ${13}^C$-NMR, and IR-spectrum. The weight average molecular weight ($M_{w}$) of the obtained polymer was 31,000 with a polydispersity index of 1.9. The polymer showed good solubility in common organic solvents, and the solution and film emitted blue emission ($\lambda_{max}$=460 nm) on irradiation with UV light. The ITO/PEDOT/polymer/Al device fabricated using the polymer as an emitting layer emitted blue light with a maximum peak around 460 nm. The maximum efficiency of the device was 0.011$\%$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.606-609
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• 1999

We fabricated white light-emitting diode which have a mixed single emitting layer containing poly(N-vinylcarbazole), trois(8-hydroxyquinoline)aluminum and poly(3-hexylthiophene) and investigated the emission properties of it. It is possible to obtain a blue light from poly(N-vinylcarbazole). green light from tris(8-hydroxyquinoline)aluminum and red light from poly(3-hexylthiophene). The fabricated device emits white light with slight orange light. We think that the energy transfer in a mixed layer occurred from PVK to Alq₃ and P3HT resulted in decreasing the blue light intensity from PVK. We find that the efficiency of the white light electroluminescent device can be improved by injecting electron more effectively and blue light need to improve the color purity of white light.

• Bulletin of the Korean Chemical Society
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• v.31 no.7
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• pp.1951-1955
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• 2010

A new blue light emitting anthracene derivative, 9,10-bis-(9',9'-diethyl-7'-t-butyl-fluoren-2'-yl)anthracene (BETF), has been designed and synthesized by a palladium catalyzed Suzuki cross-coupling. A theoretical calculation of the three-dimensional structure of BETF supports that it has a non coplanar structure and inhibited intermolecular interactions resulting in high luminescent efficiency and high color purity. BETF has good thermal stability with glass-transition temperature (Tg) of $131^{\circ}C$. The PL maximum of BETF in solution and film were 438 nm and 440 nm, respectively, showing pure blue emission. A multilayer device using BETF as emitting material exhibits maximum luminescence efficiency of 2.2 cd/A and a pure blue emission (Commission Internationale de L'Eclairage (CIE) coordinates of x = 0.15, y = 0.10).

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1549-1552
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• 2006

We report a new series of blue dopants composed of both electron donating and electron accepting moieties in one molecule, based on nalidixic acid. The EL device derived from the dopant exhibits pure blue light emission (0.15, 0.14) The current efficiency is estimated to be 3.88 cd/A at 100 $cd/m^2$, which shows remarkable enhancement, compared to that of the host itself (2.5 cd/A at 100 $cd/m^2$) under the same conditions. These results demonstrate that the incorporation of a proper guest into the host in a guest-host doped system improves not only the purity of the fluorescent blue emission but also elevates its quantum efficiency, thus improving the OLED performance.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.9-15
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• 2002

In this thesis, blue emission organic light emitting devices were fabricated by using vacuum deposition method. Two types of device were employed to realize blue emission. Type I had an emitting layer containing TPB-doped $Alq_3$ and type II had an emitting layer containing DPA-doped $Alq_3$. The variable dopant concentration was 0.5 ~2 wt%. The electrical and optical characteristics of these devices have been investigated. The more dopant concentration increased, the nearer the blue coordinate. Type I than type II had a lower turn on voltage and driving voltage. The emission luminescence of type II was brighter than that of type I. When we applied 15V to type II with DPA(2wt%)-doped $Alq_3$, we have achived the emission luminescence of 1282cd/$m^2$, the emission wavelength of 476nm and the blue emission CIE coordination of (0.1273, 0.0672)