• Bulletin of the Korean Chemical Society
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• 제19권8호
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• pp.822-824
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• 1998

The simple and convenient measurement of the dissociation constant of an indicator, thymol blue, was achieved by using a portable diode-laser/fiber-optic thermal lensing spectroscopy, which consisted of a visible diode laser, a photodiode, and an optical fiber. It gives comparable results to the cited value obtained from a conventional UV/VIS spectroscopy.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.415-419
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• 2010

A phosphor-conversion white light source is demonstrated using an InGaN-based blue laser diode (LD) and a yellow-emitting phosphor excited by the blue LD. The photometric and colorimetric properties of this blue-LD-based white light source are characterized. When injection current of the LD is 100 mA, luminous flux and luminous efficiency of the white light are found to be over 5 lm and 10 lm/W, respectively. When injection current is >90 mA, luminance is estimated to be larger than 10 Mcd/$cm^2$. In addition, color characteristics of the white light such as chromaticity coordinates, a correlated color temperature, and a color rendering index are found to be quite stable as current and temperature of the LD varies. The demonstrated LD-based white light source is expected to be used in high-brightness illumination applications with good color stability.

• 한국정보통신학회논문지
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• 제10권2호
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• pp.224-227
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• 2006

809nm의 고출력 반도체 레이저(500mV의 출력광과 LD(Laser Diode) 여기 Nd:YVO4레이저의 파장 1064nm를 공진기 내부에서 비선형 광학 소자 KTP(Potassium titanyl posphate : KTPiOPO4)를 사용하여 합주파 발생 파장인 459nm의 청색레이저를 얻었다. 제2의 위상 정합 정합조건(${\psi}=90^{\circ},\;{\theta}=90^{\circ}$)에서 반도체 레이저의 입력광 세기가400mW일 때 청색레이저의 최대 출력 0.95mW를 얻었으며, 청색레이저의 발진문턱입력 세기는 120mW이었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.945-947
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• 2009

We developed a new laser irradiation (BLDA: Blue Multi-Laser-Diode Annealing) system. The system forms the uniform line beam, which is constructed by 48 pieces of semiconductor lasers. This new system has achieved high laser output stability and the highly accurate beam shape by adopting a reliable laser control, the auto-focus control in addition to an original laser photosynthesis technology and the beam homogenizing technology. It was confirmed to crystallize the Si films effectively with good quality.

• Applied Microscopy
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• 제27권3호
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• pp.257-263
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• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• Journal of the Optical Society of Korea
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• 제13권3호
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• pp.386-391
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• 2009

PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.293-324
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• 1996

Compact solid-state blue laser have great potential for use in optical data storage, laser beam printing, particle countering, reprographics, holography, and fluorescent bioanalysis. We report recent progresses in qualities of LiB3O5 and K3Li2(TaxNb1-x)5O15 nonlinear crystals which are essential in manufacturing bulk-type blue SHG devices. We also review newly developed violet-blue laser, 20 mW output, using intracavity frequency doubling of a diode laser pumped Cr:LiSrAlF6 laser with low loss LiB3O5 crystal as a frequency doubler.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.42-43
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• 2005

Higher density in the holographic storage can be obtained by using shorter wavelength laser and higher numerical aperture (NA). In this paper, we adopted a blue laser diode with a wavelength of 405nm and high NA object lens. And the phase conjugation method is applied to prevent image distortion due to high NA. The performance of the system has been shown experimentally.

• Journal of the Optical Society of Korea
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• 제10권2호
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• pp.86-90
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• 2006

The external feedback effect on the relative intensity noise (RIN) characteristics of blue InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the injection current for the high frequency modulation. A Langevin diffusion model was exploited to characterize its relative intensity noise. The simulation parameters were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were then applied to the rate equations taking into account the external feedback and the high frequency modulation current. The RIN characteristics were investigated to optimize the low frequency laser diode noise characteristics.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.