• 대한환경공학회지
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• 제33권2호
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• pp.137-142
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• 2011

본 연구는 실험실 조건에서 비스무스 필름 전극(Bismuth film Electrode)을 사용한 양극산화벗김분석법(Anodic Stripping Voltammetry)에서 비스무스의 첨가 농도와 적정 전해질을 선택하여 최적 조건을 산출하고 최적조건을 기반으로 현장에서 중금속 모니터링 가능 여부를 확인하고자하였다. 비스무스(Bi)와 혼합중금속(Pb, Cd, Zn) 실험을 통해 정확한 중금속의 측정을 위해서는 측정하고자 하는 중금속보다 1:1 이상의 비스무스가 첨가되어야 하는 것으로 나타났다. 전해질 테스트에서는 0.1 M acetate buffer (pH 4.5), 0.1 M chloroacetate buffer (pH 2.0), 0.1 M HCl (pH 2.0), 0.1 M $HNO_3$ (pH 2.0) 중 0.1 M acetate buffer가 비스무스 필름전극을 이용한 중금속 분석에 적용 가능한 것으로 나타났다. 현장 적용시, 중금속 표준용액 100 ppb 첨가 테스트 결과 Pb은 36~45 ppb, Cd는 84~91 ppb, Zn은 90~98 ppb가 측정되었다. 첨가한 중금속보다 낮은 농도로 중금속이 측정되는 것은 현장수 매질 효과에 의한 것으로 파악되었으며, 추후 현장수 매질과 중금속 측정의 상관관계에 대한 연구가 진행될 예정이다.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3501-3504
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• 2011

• Journal of Biosystems Engineering
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• 제34권5호
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• pp.377-381
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• 2009

Excessive presence of heavy metals in environment may contaminate plants and fruits grown in that area. Rapid on-site monitoring of heavy metals can provide useful information to efficiently characterize heavy metal-contaminated sites and minimize the exposure of the contaminated food crops to humans. This study reports on the evaluation of a bismuth-coated glassy carbon electrode for simultaneous determination of cadmium (Cd) and lead (Pb) in a NIST-SRM 1568a rice flour by anodic stripping voltammetry (ASV). The use of a supporting electrolyte 0.1 M $HNO_3$ at a dilution ratio (sample pretreated with acid digestion in a microwave oven: supporting electrolyte) of 1:1 provided well-defined, sharp and separate peaks for Cd and Pb ions, thereby resulting in strongly linear relationships between Cd and Pb concentrations and peak currents measured with the electrode ($R^2\;=\;0.97$, 0.99 for Cd and Pb, respectively). The validation test results for spiked standard solutions with different concentrations of Cd and Pb gave acceptable predictability for both spiked Cd and Pb ions with mean prediction errors of 6 to 30%. However, the applicability of the electrode to the real rice flour sample was limited by the fact that Cd concentrations spiked in the rice flour sample were overly estimated with relatively high variations even though Pb ion could be quantitatively measured with the electrode.

• 한국세라믹학회지
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• 제35권9호
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• 한국분말재료학회지
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• 제18권5호
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• pp.423-429
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• 2011

Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 ${\mu}m$ in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1541-1546
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• 2012

The early stages of bismuth (Bi) electrodeposition on glass carbon electrode from alkaline electrolyte were studied by cyclic voltammetry, chronoamperometry, scanning electron microscopy, atomic force microscopy and X-ray diffraction. The CV analysis showed that the electrodeposition of Bi was determined to be quasireversible process with diffusion controlled. The current transients for Bi electrodeposition were analyzed according to the Scharifker-Hills model and the Heerman-Tarallo model. It can be concluded that the nucleation and growth mechanism was carried out under a 3D instantaneous nucleation, which was confirmed by SEM analysis. The kinetic growth parameters were obtained through a nonlinear fitting. In addition, the Bi film obtaining at -0.86 V for 1 hour was of compact and uniform surface with good smoothness, small roughness and a very high purity. The Bi film were indexed to rhombohedral crystal structure with preferred orientation of (0 1 2) planes to growth.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.312-317
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• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• 한국방사선학회논문지
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• 제3권2호
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• pp.27-31
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• 2009

현재 의료용 엑스선 장비는 기존의 아날로그 방식의 필름, 카세트를 대신하여 디지털 방식인 CR, DR 이 널리 사용되면 그에 관한 연구개발이 활발히 진행되고 있다. 본 연구 에서는 디지털 엑스선 장비의 변환물질로 $BiI_3$(Bismuth tri-iodide)를 적용하여 실험하였으며 기존 선행연구에 비해 만족할만한 결과 값은 얻을 수 없었지만 가장 많이 사용되고 있는 a-Se(Amorphous Selenium)의 단점인 고전압인가와 제작방식의 어려움을 보완할 수 있는 새로운 가능성을 제시해 주었다. 본 연구에서 사용되어진 변환 물질은 순도 99.99%의 $BiI_3$가 이용되었으며 $3cm{\times}3cm$의 크기와 200um의 두께를 가지는 변환물질 층이 제작되었다. 변환 물질의 상하부에는 Magnetron Sputtering system장비를 이용한 ITO 전극이 형성되었다. 형성된 $BiI_3$ 엑스선 변환 물질의 특성 평가를 위해 구조적 분석과 전기적 분석이 이루어 졌다. SEM 측정을 통해 제작된 필름의 표면 및 단면적, 구성 성분을 관찰하였고, 전기적 분석을 위해서는 누설전류, 엑스선에 대한 신호량 및 잡음 대 신호비의 관찰이 이루어졌다. 실험 결과 $BiI_3$는 $1.6nA/cm^2$의 누설전류와 $0.629nC/cm^2$의 신호량을 측정할 수 있었으며, 이렇게 Screen print method로 제작된 엑스선 검출 물질은 PVD방법을 이용해 제작된 물질과 비슷하거나 더 나은 전기적 특성을 가지고 있었고 이는 제작 방법의 간소화 및 수율을 향상 시킬 수 있어 BiI3도 a-Se를 대체하기 위한 변환물질로 적합하다고 사료된다.

• Journal of Electrical Engineering and Technology
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• 제2권1호
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• pp.98-101
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• 2007

Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.