• Title/Summary/Keyword: Bipolar pulse

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Crystal Structure, Microstructure and Mechanical Properties of NbN Coatings Deposited by Asymmetric Bipolar Pulsed DC Sputtering

  • Chun, Sung-Yong;Im, Hyun-Ho
    • Journal of the Korean Ceramic Society
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    • v.54 no.1
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    • pp.33-37
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    • 2017
  • Single phase niobium nitride (NbN) coatings were deposited using asymmetric bipolar pulsed dc sputtering by varying pulse frequency and duty cycle of pulsed plasmas. Crystal structure, microstructure, morphology and mechanical properties were examined using XRD, FE-SEM, AFM and nanoindentation. Upon increasing pulse frequencies and decreasing duty cycles, the coating morphology was changed from a pyramidal-shaped columnar structure to a round-shaped dense structure with finer grains. Asymmetric bipolar pulsed dc sputtered NbN coatings deposited at pulse frequency of 25 kHz is characterized by higher hardness up to 17.4 GPa, elastic modulus up to 193.9 GPa, residual compressive stress and a smaller grain size down to 27.5 nm compared with dc sputtered NbN coatings at pulse frequency of 0 kHz. The results suggest that the asymmetric bipolar pulsed dc sputtering technique is very beneficial to reactive deposition of transition-metal nitrides such as NbN coatings.

A Buck-Boost Converter-Based Bipolar Pulse Generator

  • Elserougi, Ahmed A.;Massoud, Ahmed M.;Ahmed, Shehab
    • Journal of Power Electronics
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    • v.17 no.6
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    • pp.1422-1432
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    • 2017
  • This paper presents a buck-boost converter-based bipolar pulse generator, which is able to generate bipolar exponential pulses across a resistive load. The concept of the proposed approach depends on operating the involved buck-boost converters in discontinuous current conduction mode with high-voltage gain and enhanced efficiency. A full design of the pulse generator and its passive components is presented to ensure generating the pulses with the desired specifications (rise time, pulse width, and pulse magnitude) for a given load resistance and input dc voltage. In case of moderate pulsed output voltages (i.e. few of kV), one module of the presented bipolar generator can be employed. While in case of high-voltage pulsed output, multi-module version can be employed, where each module is fed from an isolated dc source and their outputs are connected in series. Simulation models for the proposed approach are built to elucidate their performance in case of one-module as well as multi-module based generator. Finally, a scaled-down prototype for one-module of buck-boost converter-based bipolar pulse generator is implemented to validate the proposed concept.

Droplet Formation of a Piezoelectric Inkjet Nozzle According to the Variation of Pulse Widths in Bipolar Waveform (양극파형의 펄스폭 변화에 따른 피에조 구동형 잉크젯 노즐의 액적 토출 특성)

  • Choi, Sung-Hoon;Sung, Jae-Yong;Lee, Myeong-Ho
    • Journal of the Korean Society of Visualization
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    • v.10 no.1
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    • pp.9-14
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    • 2012
  • In this study, a piezoelectric inkjet nozzle with a rectangular shaped channel has been developed, and the characteristics of droplet formation have been investigated according to the variation of pulse widths in bipolar waveform. The channel of the nozzle was fabricated transparently by a precision machining technique. A tantalum membrane which was attached to a piezoelectric material covers the channel. By applying two types of bipolar waveforms to the piezoelectric actuators, droplet formation through the nozzle was monitored by a CCD camera. For the variety of the first and second pulse widths in the bipolar waveforms, the regimes of single and double droplet formations are presented. The change of droplet velocity which depends on the pulse width and the type of waveform is also discussed.

Bipolar Pulse Bias Effects on the Properties of MgO Reactively Deposited by Inductively Coupled Plasma-Assisted Magnetron Sputtering

  • Joo, Junghoon
    • Applied Science and Convergence Technology
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    • v.23 no.3
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    • pp.145-150
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    • 2014
  • MgO thin films were deposited by internal ICP-assisted reactive-magnetron sputtering with bipolar pulse bias on a substrate to suppress random arcs. Mg is reactively sputtered by a bipolar pulsed DC power of 100 kHz into ICP generated by a dielectrically shielded internal antenna. At a mass flow ratio of $Ar/O_2$ = 10 : 2 and an ICP/sputter power ratio of 1 : 1, optimal film properties were obtained (a powder-like crystal orientation distribution and a RMS surface roughness of approximately 0.42 nm). A bipolar pulse substrate bias at a proper frequency (~a few kHz) prevented random arc events. The crystalline preferred orientations varied between the (111), (200) and (220) orientations. By optimizing the plasma conditions, films having similar bulk crystallinity characteristics (JCPDS data) were successfully obtained.

A Study on Destruction Characteristics of BJT (Bipolar Junction Transistor) at Different Pulse Repetition Rate (다양한 펄스 반복률에서의 NPN BJT (Bipolar Junction Transistor)의 파괴 특성에 관한 연구)

  • Bang, Jeong-Ju;Huh, Chang-Su;Lee, Jong-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.3
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    • pp.167-171
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    • 2014
  • This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.

Development of a Bipolar Pulse Conductometric Detector for Environmental Monitoring and Electrochemical Experiments (환경수질오염 검증과 전기화학실험을 위한 양극펄스형 전기전도성검출기의 개발)

  • Kim, Haidong;Kim, Sun Tae;Kim, Taek-Jae;Kim, Young-Sang
    • Analytical Science and Technology
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    • v.5 no.1
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    • pp.79-82
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    • 1992
  • A bipolar pulse conductometric detector has been developed for continuous on-line monitroring of the flowing sample streams. The conductometric detector was fast and easy to use due to the free of interferences by serial or parallel capacitances. The performance of the bipolar pulse conductometric detector was tested using dummy cells with $10^1{\sim}10^8$ ohm resistance range and found a linear response with a 0.01% relative standard deviation. The possible applications of the bipolar pulse conductometric detector was discussed.

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A study on development of bipolar metal surface anodizing equipment using H-bridge (H-브리지를 이용한 양극성 금속표면 양극산화장치 개발에 관한 연구)

  • Yang, Keun-Ho
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.3
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    • pp.355-362
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    • 2011
  • In this paper, we developed the equipment to forming the insulation film which there are operated an electrolysis principles in particular solution. In the earlier, there are supplied the anode by unipolar voltage with pulse, in this paper, there are supplied the anode by bipolar voltage with pulse, alternately. And then, we examinate the system that there are developed the bipolar anodizing equipment using H-bridge. There are modulated pulse width for the variable current. In the results, we obtained the results of the uniform film surface that compared with the unipolar anodizing.

Implementation of the Pulse Wave Measurement System Using Bipolar Biased Head on Mode of the Hall Sensor (홀 센서의 양극 바이어스 수직모드를 이용한 맥파측정시스템 구현)

  • Jin, Sang-Gon;Kim, Myoung-Nam
    • Journal of Sensor Science and Technology
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    • v.20 no.5
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    • pp.322-328
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    • 2011
  • There are many ways to detect the heart rate non-invasively such as ECG, PPG, strain gauge, and pressure sensor. In this paper, the pulse wave measurement system using bipolar biased head on mode of the Hall sensor is proposed for measuring the radial artery pulse. TMS320F2812 was used to implement the proposed system and a portable wireless network(zig-bee) was used to show the experimental result. It was confirmed from experiment that the performance of the implemented system was more stable and faster than PPG sensor or piezoelectric film pressure sensor.

A study on the Characteristics of MgO Thin Films Deposited by Bipolar pulse power (Bipolar pulse power를 사용하여 증착한 MgO 박막의 특성에 관한 연구)

  • Kim, Young-Su;Kim, Seung-Chan;Song, Geun-Yeoung;Choi, Hoon-Young;Jung, Hai-Young;Seo, Jung-Hyun;Lee, Seok-Hyun
    • Proceedings of the KIEE Conference
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    • 2003.10a
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    • pp.167-169
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    • 2003
  • AC PDP(Plasma Display panel)에서 MgO 보호막은 방전공간에 직접 노출되어 있기 때문에, AC PDP의 수명과 방전 특성이 직접적인 영향을 미친다. 그동안 보다 좋은 특성의 MgO 보호막을 증착하기 위한 연구가 Magnetron-sputtering, E-beam, ion-plating 등 여러 가지 방법에 의해 진행되어 왔다. 본 논문에서는 Bipolar pulse power를 사용하여 sputtering 방법으로 MgO 보호막을 증착하여, 그 전기적, 광학적 특성을 기존의 magnetron-sputtering 방법으로 증착한 MgO 보호막과 비교하였다. 그 결과 Bipo1ar pulse power를 이용한 MgO 보호막의 결정립이 더 크게 나타났으며 그것으로부터 AC PDP의 수명향상에 효과가 있을 것으로 사료된다.

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Microstructure, Crystal Structure and Mechanical Properties of VN Coatings Using Asymmetric Bipolar Pulsed dc Sputtering (비대칭 바이폴라 펄스 스퍼터법으로 증착된 VN 코팅막의 미세구조, 결정구조 및 기계적 특성에 관한 연구)

  • Chun, Sung-Yong;Jeong, Pyeong-Geun
    • Journal of the Korean institute of surface engineering
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    • v.49 no.5
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    • pp.461-466
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    • 2016
  • Nanocrystalline vanadium nitride (VN) coatings were deposited using asymmetric bipolar pulsed dc sputtering to further understand the influence of the pulsed plasmas on the crystal structure, microstructure and mechanical properties. Properties of VN coatings were investigated with FE-SEM, XRD and nanoindentation. The results show that, with the increasing pulse frequency and decreasing duty cycle, the coating morphology changed from a porous columnar to a dense structure, with finer grains. Asymmetric bipolar pulsed dc sputtered VN coatings showed higher hardness, elastic modulus and residual compressive stress than dc sputtered VN coatings. The results suggest that asymmetric bipolar pulsed dc sputtering technique is very beneficial for the reactive sputtering deposition of VN coatings.