• Title/Summary/Keyword: Bias Magnetic Field

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Demagnetization to Induce Vertical Magnetization in a Military Vessel (함정에 수직자화를 부여하기 위한 탈자)

  • Kim, Young-Hak
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.1109-1112
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    • 2015
  • A milatary ship without degaussing coil has a vertical magnetization to compensate magnetization induced by the vertical magnetic field component of earth magnetic field during demagnetization process. Flash D is very useful to acquire vertical magnetization. However this is hard to predict vertical magnetization. This experiment was investicated on another method, which used the only vertical bias magentic field. The specimens were prepared by thin Zn coated steel sheet with a thickness of 0.15mm. The shapes of 3 specimes was rectangular, triangular and circular cylinders. These shapes were corresponded to the shapes of bow, mid and stern of a vessel. Through FEM analysis, the difference of magnetic signatures for these specimens was recognized and the residual magnetization curve was measured. magnetic field was generated by a solenoid coil and magnetic signature was measured by a magnetic field sensor. A linearity between a vertical bias magnetic field and a vertical manetzation existed and the vertical magnetization of a miltary vessel was predicted by the linearity.

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Temperature dependence of exchange bias in Co/Ni anti-dot arrays

  • Seo, M.S.;Deshpande, N.G.;Lee, S.J.;Lee, Y.P.;Rhee, J.Y.;Kim, K.W.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.436-436
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    • 2011
  • Recently, spintronic devices with submicron structures are widely investigated to take advantage of their unique micromagnetic properties. In this work, we study the temperature dependence of exchange bias in bilayer anti-dot arrays made by depositing Co (40 nm)/Ni (5 nm) ferromagnetic bilayer on Si substrate to form anti-dot arrays with a diameter $1{\mu}m$. The anti-dot patterning was done only for the upper Co layer, while the Ni underlayer was kept unperforated. The temperature dependences of magnetoresistance (MR) and exchange bias were studied along magnetic easy and hard axes. The in-plane MR measurements were performed using a physical-property measurement system (PPMS ; Quantum Design Inc.) at various temperatures. The standard in-line four-point probe configuration was used for the electrical contacts. As temperature was varied, the MR data were obtained in which in-plane field (H=3 kOe) was applied in the directions along the hard and the easy axes with respect to the lattice plane. The temperature dependences of magnetic anisotropy and exchange bias were also studied along the magnetic easy and hard axes. As temperature decreases, the single peak splits into two peaks. While no exchange bias was observed along the magnetic easy axis, the exchange bias field steadily increased with decreasing temperature along the magnetic hard axis. These results were interpreted in connection with the magnetic anisotropy and the effect of the anti-dots in pinning domain wall motion along the respective direction.

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Effects of Thickness of Ferromagnetic Co Layer and Annealing on the Magnetic Properties of Co/IrMn Bilayers. (Co/IrMn 이층막의 자기적 특성과 Co 두께 및 어닐링의 영향)

  • Jung, Jung-Gyu;Lee, Chan-Gyu;Koo, Bon-Heun;Lee, Gun-Hwan;Hayashi, Yasunori
    • Korean Journal of Materials Research
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    • v.13 no.7
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    • pp.447-452
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    • 2003
  • Effects of annealing and thickness of Co layer in Co/IrMn bilayers on the magnetic properties have been investigated. The highest interfacial exchange coupling energy($J_{K}$ = 0.12 erg/$\textrm{cm}^2$) was obtained for 10 nm Co layer thickness. Exchange bias field is inversely proportional to the magnetization, the thickness of the pinned layer, and the grain size of antiferromagnetic layer. Also it is related to the interfacial exchange energy difference, which is expected to depend on the surface roughness. These results almost agree with the random-field model of exchange anisotropy proposed by Malozemoff. Exchange bias field decreased slowly with increasing annealing temperature up to X$300^{\circ}C$. However, exchange bias field increased above $300^{\circ}C$.

Analytic Model of Spin-Torque Oscillators (STO) for Circuit-Level Simulation

  • Ahn, Sora;Lim, Hyein;Shin, Hyungsoon;Lee, Seungjun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.1
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    • pp.28-33
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    • 2013
  • Spin-torque oscillators (STO) is a new device that can be used as a tunable microwave source in various wireless devices. Spin-transfer torque effect in magnetic multilayered nanostructure can induce precession of magnetization when bias current and external magnetic field are properly applied, and a microwave signal is generated from that precession. We proposed a semi-empirical circuit-level model of an STO in previous work. In this paper, we present a refined STO model which gives more accuracy by considering physical phenomena in the calculation of effective field. Characteristics of the STO are expressed as functions of external magnetic field and bias current in Verilog-A HDL such that they can be simulated with circuit-level simulators such as Hspice. The simulation results are in good agreement with the experimental data.

Exchange Bias in Cr2O3/Fe3O4 Core/Shell Nanoparticles

  • Yun, B.K.;Koo, Y.S.;Jung, J.H.
    • Journal of Magnetics
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    • v.14 no.4
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    • pp.147-149
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    • 2009
  • We report the exchange bias in antiferromagnet/ferrimagnet $Cr_2O_3/Fe_3O_4$ core/shell nanoparticles. The magnetic field hysteresis curve for $Cr_2O_3/Fe_3O_4$ nanoparticles after field-cooling (FC) clearly showed both horizontal ($H_{EB}{\sim}$610 Oe) and vertical (${\Delta}M{\sim}$5.6 emu/g) shifts at 5 K. These shifts disappeared as the temperature increased toward the Neel temperature of $Cr_2O_3\;(T_N{\sim}$307 K). The $H_{EB}\;and\;{\Delta}M$ values were sharply decreased between the $1^{st}\;and\;the\;2^{nd}$ magnetic field cycles, and then slowly decreased with further cycling. These results are discussed in terms of the formation of single domains with pinned, uncompensated, antiferromagnetic spin and their evolution into multi-domains with cycling.

Electron Holography of Advanced Nanomaterials

  • Shindo, D.;Park, H.S.;Kim, J.J.;Oikawa, T.;Tomita, T.
    • Applied Microscopy
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    • v.36 no.spc1
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    • pp.63-69
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    • 2006
  • By utilizing a field emission gun and a biprism installed on a transmission electron microscope (TEM), electron holography is extensively carried out to visualize the electric and magnetic fields of nanomaterials. In the electric field analysis, the distribution of electric potential in a sharp tip made of W coated with $ZrO_2$ is visualized by applying the voltage to the tip. Denser contour lines due to the electric potential are observed with an increase in the bias voltage. In the magnetic field analysis by producing the strong magnetic field with a sharp magnetic needle made of a permanent magnet, the in situ experiment is carried out to investigate the magnetization of hard magnetic materials. The results of these experiments clearly demonstrate that electron holography is a promising advanced transmission electron microscopy technique to characterize the electric and magnetic properties of nanomaterials.

Analysis and Design Actuator of Using Magnetostrictive Material (자기왜형 물질을 이용한 액츄에이터의 설계 및 특성해석)

  • Jang, S.M.;Cha, S.D.;Lim, C.U.;Jeong, T.Y.
    • Proceedings of the KIEE Conference
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    • 2001.07b
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    • pp.751-753
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    • 2001
  • The characteristic of magnetostrictive is to change shape in a magnetic field, TERFENOL-D is said to produce magnetostriction. A magneto strictive actuator need to the magnetic circuit. The most important design consideration is the magnetic circuit. The magnetic circuit consists of the solenoid coil, permanets for bias and shaping of the other parts through which the magnetic field passes. A good magnetic circuit ensures the proper magnetic field in th TERFENOL-D and very uniform magnetic field in all phases of the actuator operating cycle. This paper presents magnetic circuit design and analysis uesing FEM.

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The effect of Thin Film magnet on soft magnetic thin film (박막자석이 연자성박막에 미치는 바이어스 효과)

  • Kim, Young-Hak;Shin, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.101-104
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    • 2003
  • The maximum coercive force of SmCo thin film was obtained at the Sm=28.2% and dc bias field was generated to CoZrNb, soft magnetic thin film, deposited on the SmCo thin film. DC field point having the maximum permeability for CoZrNb was shifted to higher dc field. DC field strength increased as the length of easy direction of magnetization decreased and 60Oe was measured for $3mm{\times}0.5mm$ sample.

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Computer Simulation of Switching Characteristics and Magnetization Flop in Magnetic Tunnel Junctions Exchange Biased by Synthetic Antiferromagnets

  • Lim, S.H.;Uhm, Y.R.
    • Journal of Magnetics
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    • v.6 no.4
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    • pp.132-141
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    • 2001
  • The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

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Under Water Sonar Transducer Using Terfenol-D Magnetostrictive Material

  • Son, Derac;Cho, Yuk
    • Journal of Magnetics
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    • v.4 no.3
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    • pp.98-101
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    • 1999
  • In this work we htave constructed an under water sonar transducer using Terfenol-D rod employing open magnetic circuit. Normally Sonar transducer using Terfenol-D was designed under closed magnetic flux return path, and permanent magnet for dc bias marnetic field, but high magnetic field should be applied to the transducer coil for high sound power and it brings temperature increase inside of the transducer. To improve this heat dissipation problem, we have designed an open magnetic circuit type transducer and we can get 200 dB (re. 1 Pa @ 1m) sound power for the input power of 650 VA.

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