• Title/Summary/Keyword: Bias Flux

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Design and Measurements of an RSFQ NDRO circuit (단자속 양자 NDRO 회로의 설계와 측정)

  • 정구락;홍희송;박종혁;임해용;강준희;한택상
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.10a
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    • pp.76-78
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    • 2003
  • We have designed and tested an RSFQ (Rapid Single Flux Quantum) NDRO (Non Destructive Read Out) circuit for the development of a high speed superconducting ALU (Arithmetic Logic Unit). When designing the NDRO circuit, we used Julia, XIC and Lmeter for the circuit simulations and layouts. We obtained the simulation margins of larger than $\pm$25%. For the tests of NDRO operations, we attached the three DC/SFQ circuits and two SFQ/DC circuits to the NDRO circuit. In tests, we used an input frequency of 1 KHz to generate SFQ Pulses from DC/SFQ circuit. We measured the operation bias margin of NDRO to be $\pm$15%. The circuit was measured at the liquid helium temperature.

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RSFQ DFFC Circuit Design for Usage in developing ALU (ALU의 개발을 위한 RSFQ DFFC 회로의 설계)

  • 남두우;김규태;강준희
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.10a
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    • pp.123-126
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    • 2003
  • RSFQ (Rapid Single Flux Quantum) circuits are used in many practical applications. RSFQ DFFC (Delay Flip-Flop with complementary outputs) circuits can be used in a RAM, an ALU (Arithmetic Logic Unit), a microprocessor, and many communication devices. A DFFC circuit has one input, one switch input, and two outputs (output l and output 2). DFFC circuit functions in such way that output 1 follows the input and output 2 is the complement of the input when the switch input is "0." However, when there is a switch input "1."the opposite output signals are generated. In this work, we have designed an RSFQ DFFC circuit based on 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology. As circuit design tools, we used Xic, WRspice, and Lmeter After circuit optimization, we could obtain the bias current margins of the DFFC circuit to be above 32%.

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Issues in Building Large RSFQ Circuits (대형 RSFQ 회로의 구성)

  • Kang, J.H.
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.17-22
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    • 2001
  • Practical implementation of the SFQ technology in most application requires more than single-chip-level circuit complexity. Multiple chips have to be integrated with a technology that is reliable at cryogenic temperatures and supports an inter-chip data transmission speed of tens of GHz. In this work, we have studied two basic issues in building large RSFQ circuits. The first is the reliable inter-chip SFQ pulse transfer technique using Multi-Chip-Module (MCM) technology. By noting that the energy contained in an SFQ pulse is less than an attojoule, it is not very surprising that the direct transmission of a single SFQ pulse through MCM solder bump connectors can be difficult and an innovative technique is needed. The second is the recycling of the bias currents. Since RSFQ circuits are dc current biased the large RSFQ circuits need serial biasing to reduce the total amount of current input to the circuit.

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Simulations Analysis of Proposed Structure Characteristics in Shallow Trench Isolation for VLSI (고집적을 위한 얕은 트랜치 격리에서 제안한 구조의 특성 모의 분석)

  • Lee, YongJae
    • Journal of the Korea Society for Simulation
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    • v.23 no.3
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    • pp.27-32
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    • 2014
  • In this paper, We are going to propose the novel structure with improved behavior than the conventional vertical structure for VLSI CMOS circuits. For this, the proposed structure is the moat shape for STI. We want to analysis the characteristics of simulations about the electron concentration distribution, oxide layer shape of hot electron stress, potential flux and electric field flux, electric field fo themal damage and current-voltage characteristics in devices. Physically based models are the ambient and stress bias conditions of TCAD tool. As a analysis results, shallow trench structure were trended to be electric functions of passive as device dimensions shrink. The electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage, are decreased the stress effects of active region. The fabricated device of based on analysis results data were the almost same characteristics of simulation results data.

Fabrication Process of Single Flux Quantum ALU by using Nb Trilayer (Nb Trilayer를 사용한 단자속양자 논리연산자의 제작공정)

  • Kang, J.H.;Hong, H.S.;Kim, J.Y.;Jung, K.R.;Lim, H.R.;Park, J.H.;Hahn, T.S.
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.181-185
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    • 2007
  • For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

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Diamond-Like Carbon Films Deposited by Pulsed Magnetron Sputtering System with Rotating Cathode

  • Chun, Hui-Gon;You, Yong-Zoo;Nikolay S. Sochugov;Sergey V. Rabotkin
    • Journal of the Korean institute of surface engineering
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    • v.36 no.4
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    • pp.296-300
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    • 2003
  • Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

Uncertainty of Discharge-SS Relationship Used for Turbid Flow Modeling (탁수모델링에 사용하는 유량-SS 관계의 불확실성)

  • Chung, Se-Woong;Lee, Jung-Hyun;Lee, Heung-Soo;Maeng, Seung-Jin
    • Journal of Korea Water Resources Association
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    • v.44 no.12
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    • pp.991-1000
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    • 2011
  • The relationship between discharge (Q) and suspended sediment (SS) concentration often is used for the estimation of inflow SS concentration in reservoir turbidity modeling in the absence of actual measurements. The power function, SS=aQb, is the most commonly used empirical relation to determine the SS load assuming the SS flux is controlled by variations of discharge. However, Q-SS relation typically is site specific and can vary depending on the season of the year. In addition, the relation sometimes shows hysteresis during rising limb and falling limb for an event hydrograph. The objective of this study was to examine the hysteresis of Q-SS relationships through continuous field measurements during flood events at inflow rivers of Yongdam Reservoir and Soyang Reservoir, and to analyze its effect on the bias of SS load estimation. The results confirmed that Q-SS relations display a high degree of scatter and clock-wise hysteresis during flood events, and higher SS concentrations were observed during rising limb than falling limb at the same discharge. The hysteresis caused significant bias and underestimation of SS loading to the reservoirs when the power function is used, which is important consideration in turbidity modeling for the reservoirs. As an alternative of Q-SS relation, turbidity-SS relation is suggested. The turbidity-SS relations showed less variations and dramatically reduced the bias with observed SS loading. Therefore, a real-time monitoring of inflow turbidity is necessary to better estimate of SS influx to the reservoirs and enhance the reliability of reservoir turbidity modeling.

Flood Simulation using Vflo and Radar Rainfall Adjustment Data by Statistical Objective Analysis (통계적 객관 분석법에 의한 레이더강우 보정 및 Vflo를 이용한 홍수모의)

  • Noh, Hui Seong;Kang, Na Rae;Kim, Byung Sik;Kim, Hung Soo
    • Journal of Wetlands Research
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    • v.14 no.2
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    • pp.243-254
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    • 2012
  • Recently, the use of radar rainfall data that can help tracking of the development and movement of rainfall's spatial distribution is drawing much attention in hydrology. The reliability of existing radar rainfall compared to gauge rainfall data on the ground has not yet been confirmed and so we have difficulties to apply the radar rainfall in hydrology. The radar rainfall for the applications in hydrology are adjusted merging method derived from gage. This study uses the Mean-Field Bias (MFB) and Statistical Objective Analysis (SOA) as correction methods to create adjusted grid-based radar rainfall data which can represent the temporal and spatial distribution of rainfall. This study used a storm event occurred in August 2010 for the adjustment of radar rainfall. In addition, the grid-based distributed rainfall-runoff model (Vflo), which enables more detailed examinations of spatial flux changes in the basin rather than the lumped hydrological models, has been applied to Gamcheon river basin which is a tributary of Nakdong River located in south-eastern part of the Korean peninsular and the basin area is $1005km^2$. The simulated runoff was compared with the observed runoff in an attempt to evaluate the usability of radar rainfall data and the reliability of the correction methods. The error range of peak discharge using each correction method was within 20 percent and the efficiency of the model was between 60 and 80 percent. In particular, the SOA method showed better results than MFB method. Therefore, the SOA method could be used for the adjustment of grid-based radar rainfall and the adjusted radar rainfall can be used as an input data of rainfall-runoff models.

Etching Characteristics of VO2 Films in Inductively coupled Cl2/Ar Plasma (Cl2/Ar 혼합가스를 이용한 VO2 박막의 유도결합 플라즈마 식각)

  • Jung, Hee-Sung;Kim, Sung-Ihl;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.727-732
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    • 2008
  • In this work, the etch characteristics of $VO_2$ thin films were investigated using inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the $VO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the $Cl_2/Ar$ plasma at fixed gas pressure, input power, and bias power resulted in increasing $VO_2$ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the $VO_2$ films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of $VO_2$ film in the $Cl_2/Ar$ plasma.

Improvement of Dynamic Characteristic of Large-Areal Planar Stage Using Induction Principle (인덕션 방식을 이용한 평면 스테이지의 동특성 개선)

  • Jung, Kwang-Suk;Park, Jun-Kyu;Kim, Hyo-Jun
    • Journal of Institute of Control, Robotics and Systems
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    • v.15 no.7
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    • pp.675-682
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    • 2009
  • Instead of direct driving like BLDC, the induction principle is adopted as a driving one for planar stage. The stage composed of four linear induction motors put in square type is activated by two-axial forces; low-frequency attractive force and thrust force of the linear induction motors. Here, the modified vector control whose new inputs are q-axis current and dc current biased to three phase current instead of d-axis current or flux current is applied extensively to overall motion of the stage. For the developed system, the precision step test and the constant velocity test are tried to guarantee its feasibility for TFT-LCD pattern inspection. However, to exclude a discontinuity due to phase shift and minimize a force ripple synchronized with the command frequency, the initial system is revised to the antagonistic structure over the full degree of freedom. Concretely describing, the porous air bearings guide an air-gapping of the stage up and down and a pair of liner induction motors instead of single motor are activated in the opposite direction each other. The performances of the above systems are compared from trapezoid tracking test and sinusoidal test.