• 제목/요약/키워드: BiTeSe

검색결과 84건 처리시간 0.027초

산화물환원과 압축성형 공정에 의한 Bi2Te2.5Se0.5 화합물의 제조와 열전특성 (Fabrication of Bi2Te2.5Se0.5 by Combining Oxide-reduction and Compressive-forming Process and Its Thermoelectric Properties)

  • 임영수;이길근
    • 한국분말재료학회지
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    • 제31권1호
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    • pp.50-56
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    • 2024

  • We report the effect of plastic deformation on the thermoelectric properties of n-type Bi2Te2.5Se0.5 compounds. N-type Bi2Te2.5Se0.5 powders are synthesized by an oxide-reduction process and consolidated via spark-plasma sintering. To explore the effect of plastic deformation on the thermoelectric properties, the sintered bodies are subjected to uniaxial pressure to induce a controlled amount of compressive strains (-0.2, -0.3, and -0.4). The shaping temperature is set using a thermochemical analyzer, and the plastic deformation effect is assessed without altering the material composition through differential scanning calorimetry. This strategy is crucial because the conventional hot-forging process can often lead to alterations in material composition due to the high volatility of chalcogen elements. With increasing compressive strain, the (00l) planes become aligned in the direction perpendicular to the pressure axis. Furthermore, an increase in the carrier concentration is observed upon compressive plastic deformation, i.e., the donor-like effect of the plastic deformation in n-type Bi2Te2.5Se0.5 compounds. Owing to the increased electrical conductivity through the preferred orientation and the donor-like effect, an improved ZT is achieved in n-type Bi2Te2.5Se0.5 through the compressive-forming process.

  • https://doi.org/10.4150/KPMI.2024.31.1.50 인용 PDF

0.5 vol% TiO2 나노분말을 분산시킨 n형 Bi2(Te0.9Se0.1)3 가압소결체의 열전특성 (Thermoelectric Properties of the n-type Bi2(Te0.9Se0.1)3 Processed by Hot Pressing with Dispersion of 0.5 vol% TiO2 Nanopowders)

  • 박동현;오태성
    • 마이크로전자및패키징학회지
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    • 제20권1호
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    • pp.15-19
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    • 2013

  • 용해/분쇄법으로 제조한 n형 $Bi_2(Te_{0.9}Se_{0.1})_3$ 분말에 0.5 vol% $TiO_2$ 나노분말을 분산시켜 가압소결 후, $TiO_2$ 나노분말의 분산이 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 열전특성에 미치는 영향을 분석하였다. $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체는 $2.93{\times}10^{-3}/K$의 최대 성능지수 및 1.02의 최대 무차원 성능지수의 우수한 열전특성을 나타내었다. 0.5 vol% $TiO_2$ 나노분말의 첨가에 의해 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 최대 성능지수가 $2.09{\times}10^{-3}/K$로 감소하였으며, 최대 무차원 성능지수는 0.68로 저하하였다.

  • https://doi.org/10.6117/kmeps.2013.20.1.015 인용 PDF KSCI

$Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$계 박막형 열전발전 소자의 제작과 작동 특성 (Fabrication and Performance of $Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$ Thin Film Thermoelectric Generators)

  • 김일호;장경욱
    • 한국진공학회지
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    • 제15권2호
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    • pp.180-185
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    • 2006

  • [ $Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$ ]계 박막형 열전발전 소자에 의해 volt 단위의 비교적 고전압에서 microwatt 수준의 출력을 발생시킬 수 있었다. 최대 출력은 온도차와 2차 함수적인 관계가 있었고, 주어진 온도차에서 판형 모듈의 적층수에 비례하여 증가하였다. 판형 모듈의 적층수와 직렬/병렬 연결 조합의 변화에 의해 출력 전압과 전류를 조절할 수 있었다. 온도차에 대한 개회로 전압과 폐회로 전류의 변화는 직선성을 보였다. 개회로 전압은 직렬 연결의 경우 판형 모듈의 수에 의존하였지만, 병렬 연결의 경우에는 의존하지 않았다. 반면, 폐회로 전류는 직렬연결의 경우 판형 모듈의 적층수와 무관하게 일정한 값을 나타내었고, 병렬 연결의 경우 판형 모듈의 적층수에 비례하여 증가하였다.

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Influence of Annealing Temperature on Structural and Thermoelectrical Properties of Bismuth-Telluride-Selenide Ternary Compound Thin Film

  • Kim, Youngmoon;Choi, Hyejin;Kim, Taehyeon;Cho, Mann-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.304.2-304.2
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    • 2014

  • Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

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